56295C Search Results

56360A

Abstract: TO220 washer rectangular 56264B 56379 56369 56359B 56364 56359C 56295B
Contextual Info: ACCESSORIES _ TYPE NUMBER SUMMARY type number description envelope 56264a mica washer up to 2000 V DO-5, TO-48 56264b insulating bush DO-5, TO-48 56295a mica washer (up to 2000 V) DO-4, TO-64 56295b PTFE ring DO-4, TO-64 56295c

Contextual Info: N AMER P H ILIP S /D IS C R E TE □LE D • b b 5 3 T 3 1 0 0 1 1 7 1 5 fl ■ 1N3889 to 1N3893 J ^T-03-l 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

PHILIPS BYX50-200

Contextual Info: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:

Contextual Info: N AUER PHILIPS/DISCRETE b b S a ^ l ODllEb=] 0 ObE D BYV21 SERIES T-03-19 J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are

Contextual Info: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

Contextual Info: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

ALP-51

Abstract: BYR30-500 BYR30-600 BYR30-600U
Contextual Info: N AMER PHILIPS/DISCRETE SSE J> t.bS3T31 0022445 S • BYR30 SERIES 7 = 0 3 -/7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes:, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

m2131

Abstract: BYV31-500 BYV31-500U S 0319
Contextual Info: N AMER BSE P H IL IP S /D IS C R E T E D • ^5 3 1 3 3 1 0 0 2 5 5 4 5 JL 1 ■ BYV31 SERIES 7 - 0 3 - 1 y _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in D O —4 m etal envelopes, fe a tu rin g lo w fo rw a rd

m2131

Abstract: BYV31-500 BYV31-500U m1529 BYV31-300 m1246 diodes byv31
Contextual Info: SSE D N AMER PHILIPS/DISCRETE • 1^53=131 QG2554S 1 ■ BVV31 SERIES T 0 3 -/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

M3163

Abstract: M3162
Contextual Info: BYV121 SERIES - = PHILIPS INTERNATIONAL SbE ]> • 711Dfl2t D O m m b bb3 ■ P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop,

Contextual Info: BYV31 SERIES SbE D PHILIPS INTERNATIONAL • 7110fl2b D D m B S D bflfl ■ P H I N r - o 3 ~ i ci ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in D O —4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

triac btw43

Abstract: BTW43-600 induction furnace induction furnace currents btw43 BTW43-600H M2369 M2631 BTW43-600G triac D 982
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DÖ2b 00L.243S T4b ■ PHIN L BTW43 SERIES TRIACS Glass-passivated silicon triacs in metal envelopes, intended fo r industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used fo r

byv31

Abstract: m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b
Contextual Info: BYV31 SERIES 5bE D PHILIPS INTERNATIONAL • 711DÔ2L 004135D bfifi BIPHIN T - 0 3 - t * J ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

Contextual Info: QbE D N AMER PHILIPS/DISCRETE • ^53131 Q011T47? |[ B TW 43 SERIES o c r . i c - / TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used for

BYX50-200

Abstract: BYX50 PHILIPS BYX50-200 ALPS 102 IEC134
Contextual Info: N AUER PH IL IPS/DISCR ETE TDD D 1^53131 0010S20 T BYX50 SERIES T -0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

m3171

Abstract: BYV120-35M BVV120 BYV120 BYV120-35 M3170
Contextual Info: ~ N AMER PH IL IP S /D ISC RE TE SSE [ I bbS3T31 D QGSSbô3 T • BYV120 SERIES T -Ô Z -1 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in

1N3893

Abstract: ds662 1N3889 c738 1N3890 1N3891 1N3892 56295A
Contextual Info: N AMER PHILIPS/DISCRETE □ LE D fabsa^i 0011715 a 1N3889 to 1N3893 T - 0 3 - J7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.

56360A

Abstract: 56359D
Contextual Info: MOUNTING INSTRUCTIONS TO-220 MOUNTING INSTRUCTIONS FOR TO-220 ENVELOPES GENERAL DATA AND INSTRUCTIONS General rules 1. 2. 3. 4. First fasten the device to the heatsink before soldering the leads. Avoid axial stress to the leads. Keep mounting tool e.g. screwdriver clear o f the plastic body.

Contextual Info: ' N AnER P H IL IP S /D IS C R E T E 25E ' [I ^ 5 3 ^ 3 1 D 0022^63 T • BYV120 SERIES J T -0 Z -I7 v. SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are intended for use in

56295A

Abstract: 1N3889 1N3890 1N3891 1N3892 1N3893 IEC134 C738
Contextual Info: N AMER PHILIPS/DISCRETE tbS3T31 0G11715 fl □ LE D 1N3889 to 1N3893 T ~ 0 3 - 17 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.

ajs 75-7

Abstract: M3168 M3170 56295B
Contextual Info: BYV120 SERIES T-OJ-17 _ PHILIPS INTERNATIONAL SbE J> I 711002b 0041400 ST7 « P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in

BTW43

Contextual Info: PHILIPS INTERNATIONAL bSE D • 711üö2b ÜGbS43S T4b ■ P H I N BTW43 SERIES TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable for static switching of 3-phase induction motors. They may also be used for

bvr3

Abstract: BYR30-500 BYR30-600 BYR30-600U
Contextual Info: SbE 711DÛEL D DOmSSD 7T7 MPHIN BYR30 SERIES ULTRA FAST-RECOVERY RECTIFIER DIODES *7 Glass-passivated, high-efftciency epitaxial rectifie r diodes in DO-4 metal envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery