56360A
Abstract: TO220 washer rectangular 56264B 56379 56369 56359B 56364 56359C 56295B
Text: ACCESSORIES _ TYPE NUMBER SUMMARY type number description envelope 56264a mica washer up to 2000 V DO-5, TO-48 56264b insulating bush DO-5, TO-48 56295a mica washer (up to 2000 V) DO-4, TO-64 56295b PTFE ring DO-4, TO-64 56295c
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56264a
56264b
56295a
56295b
56295c
56359b
56359c
56359d
56360a
56368b
TO220 washer rectangular
56379
56369
56364
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Untitled
Abstract: No abstract text available
Text: N AMER P H ILIP S /D IS C R E TE □LE D • b b 5 3 T 3 1 0 0 1 1 7 1 5 fl ■ 1N3889 to 1N3893 J ^T-03-l 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
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1N3889
1N3893
T-03-l
1N3889,
1N3890,
1N3891,
1N3892
1N3893.
1N3890
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PHILIPS BYX50-200
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:
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bb53T31
BYX50
BYX50â
bbS3T31
0010S5S
tt53T31
PHILIPS BYX50-200
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b b S a ^ l ODllEb=] 0 ObE D BYV21 SERIES T-03-19 J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are
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BYV21
T-03-19
BYV21-40A,
LLS3T31
bb53T31
001137b
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N82S123F
Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which
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N82S23/N82S123
82S23
82S123
N82S123F
N82S123N
N82S23F
82S123 programming
N82S23N
SIGNETICS prom
signetics 82S123
n82s123
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery
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002244S
BYR30
BYR30-500
0DEEM51
0D22452
T-03-17
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Untitled
Abstract: No abstract text available
Text: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
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QD2554S
BVV31
E3YV31
T-03-I9
LbS3T31
BYV31
00225S2
T-03-19
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ALP-51
Abstract: BYR30-500 BYR30-600 BYR30-600U
Text: N AMER PHILIPS/DISCRETE SSE J> t.bS3T31 0022445 S • BYR30 SERIES 7 = 0 3 -/7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes:, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery
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bs3ci31
BYR30
BYR30-500
T-03-17
M3085
M3086
M1245
ALP-51
BYR30-600
BYR30-600U
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m2131
Abstract: BYV31-500 BYV31-500U S 0319
Text: N AMER BSE P H IL IP S /D IS C R E T E D • ^5 3 1 3 3 1 0 0 2 5 5 4 5 JL 1 ■ BYV31 SERIES 7 - 0 3 - 1 y _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in D O —4 m etal envelopes, fe a tu rin g lo w fo rw a rd
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00225MS
ABYV31
-roz-13
BYV31â
m2133
BYV31
T-03-19
m2132
m2131
BYV31-500
BYV31-500U
S 0319
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m2131
Abstract: BYV31-500 BYV31-500U m1529 BYV31-300 m1246 diodes byv31
Text: SSE D N AMER PHILIPS/DISCRETE • 1^53=131 QG2554S 1 ■ BVV31 SERIES T 0 3 -/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
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BYV31
BYV31â
005SSS1
M2132
E3YV31
G022SSa
T-03-19
M2135
M2136
m2131
BYV31-500
BYV31-500U
m1529
BYV31-300
m1246
diodes byv31
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m3165
Abstract: No abstract text available
Text: BYV121 SERIES _ / v_ SCHO TTK Y-B A R RIER RECTIFIER DIODES Low-leakage, p la tin u m -b a rrie r re c tifie r diodes in m etal envelopes, fe a tu rin g lo w fo rw a rd voltage d ro p , low capacitance, absence o f stored charge and high te m p e ra tu re s ta b ility . T he y are intended f o r use in
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BYV121
M3165
m3165
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pby 345
Abstract: BYW93 pbyr BYX56 56360A BYW31
Text: INDEX _y v. Type No. Page 43 55 65 69 81 BYV92 series B Y V 1 18 series BYV118F series B Y V 120 series BYV121 series 461 469 479 483 491 BY229 series BY229F series BY249 series BY249F series BY329 series 93 105 117 123 131 BYV133 series BYV133F series BYV143 series
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BR210
BR211
BR213
BR216
BR220
BYV92
BYV118F
BYV121
BYV133
BYV133F
pby 345
BYW93
pbyr
BYX56
56360A
BYW31
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M3163
Abstract: M3162
Text: BYV121 SERIES - = PHILIPS INTERNATIONAL SbE ]> • 711Dfl2t D O m m b bb3 ■ P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop,
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BYV121
711Dfl2t
T-03-17
711002b
0D41S03
D8493
M3163
M3162
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Untitled
Abstract: No abstract text available
Text: BYV31 SERIES SbE D PHILIPS INTERNATIONAL • 7110fl2b D D m B S D bflfl ■ P H I N r - o 3 ~ i ci ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in D O —4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
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BYV31
7110fl2b
T-03-19
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byv31
Abstract: m2131 BYV31-500 BYV31-500U 2521a BYV31-300 M2130 56295b
Text: BYV31 SERIES 5bE D PHILIPS INTERNATIONAL • 711DÔ2L 004135D bfifi BIPHIN T - 0 3 - t * J ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.
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BYV31
004135D
T-03-l
BYV31â
M2133
M2132
M2130
m2131
BYV31-500
BYV31-500U
2521a
BYV31-300
M2130
56295b
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Untitled
Abstract: No abstract text available
Text: QbE D N AMER PHILIPS/DISCRETE • ^53131 Q011T47? |[ B TW 43 SERIES o c r . i c - / TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used for
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Q011T47?
BTW43-600
bbS3131
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Untitled
Abstract: No abstract text available
Text: J _L N AMER PHILIPS/DISCRETE ObE D bbS3T31 0 0 1 1 7 m 2 • 1N 3879l o ~ 1N 3883 ^ JVT-Q3-I7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO—4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
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bbS3T31
3879l
1N3879
1N3880
1N3881
1N3882
1N3883.
1N3879
1N3880
1N3881
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BYX50-200
Abstract: BYX50 PHILIPS BYX50-200 ALPS 102 IEC134
Text: N AUER PH IL IPS/DISCR ETE TDD D 1^53131 0010S20 T BYX50 SERIES T -0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:
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0010S20
BYX50
T-03-/7
BYX50-200,
BYX50-
10-dE
b53T31
BYX50-200
PHILIPS BYX50-200
ALPS 102
IEC134
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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m3171
Abstract: BYV120-35M BVV120 BYV120 BYV120-35 M3170
Text: ~ N AMER PH IL IP S /D ISC RE TE SSE [ I bbS3T31 D QGSSbô3 T • BYV120 SERIES T -Ô Z -1 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in
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bbS3T31
00S2bÃ
BYV120
BVV120â
bb53T31
T-03-17
M3172
M80-1070/7
m3171
BYV120-35M
BVV120
BYV120-35
M3170
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1N3893
Abstract: ds662 1N3889 c738 1N3890 1N3891 1N3892 56295A
Text: N AMER PHILIPS/DISCRETE □ LE D fabsa^i 0011715 a 1N3889 to 1N3893 T - 0 3 - J7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.
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1N3889
1N3893
T-03-I7
1N3889,
1N3890,
1N3891,
1N3892
1N3893.
1N3890
1N3893
ds662
c738
1N3891
56295A
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Untitled
Abstract: No abstract text available
Text: BYV120 SERIES y V- SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, p la tin u m -b a rrie r re c tifie r diodes in m etal envelopes, fe a tu rin g lo w fo rw a rd voltage d ro p , lo w capacitance, absence o f stored charge and high te m p e ra tu re s ta b ility . T h e y are intended fo r use in
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BYV120
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56360A
Abstract: 56359D
Text: MOUNTING INSTRUCTIONS TO-220 MOUNTING INSTRUCTIONS FOR TO-220 ENVELOPES GENERAL DATA AND INSTRUCTIONS General rules 1. 2. 3. 4. First fasten the device to the heatsink before soldering the leads. Avoid axial stress to the leads. Keep mounting tool e.g. screwdriver clear o f the plastic body.
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O-220
O-220
56264a
56264b
56264a.
56264a
56264b
56360A
56359D
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Untitled
Abstract: No abstract text available
Text: ' N AnER P H IL IP S /D IS C R E T E 25E ' [I ^ 5 3 ^ 3 1 D 0022^63 T • BYV120 SERIES J T -0 Z -I7 v. SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are intended for use in
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BYV120
T-03-17
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