531000 Search Results

Contextual Info: Tension spring | Spacing 5.0 mm AK3100/.-5.0-PEBBLE GREY 1- to n-poles Order Data Spacing 5.0 mm Technical Data Article Designation Article Number Solid min 0.14 mm² Material PA 6.6 2 12.20 AK3100/2-5.0-PEBBLE GREY 53100020001F 200 solid max 2.5 mm² Flammability Class

MSM531000

Contextual Info: O K I semiconductor 531000A/B 131,072-Word x 8-Bit Mask ROM GENERAL DESCRIPTION The M S M 531000A /B is a silicon gate C M O S device ROM with 131,072-word x 8-bit capacity. It operates on a 5V single pow er supply and all input and output are TTL com patible. The adoption

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

531030

Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
Contextual Info: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C

02CM

Contextual Info: ROMs M a sk RO M s 1-M eg M a s k R O M s Part Number Configuration P ins/Package M SM 531020B 128K x 8 2 8 / DIP | M SM 531000B 128K x 8 2 8 / D IP 100 5.0 V M SM 5 3 1 0 3 0 B 128K x 8 2 8 / D IP 150 3.3 V 5.0 V 1 A ccess Tima M a x ns Voltage 70 5.0 V

tc531000p

Abstract: TC541000AP TC531000
Contextual Info: h >í i t v a r v / A i t L y v .in v ^ u i i TC541000AP / AF - 12, -1 5 TC541001AP/AF -1 2 , -1 5 SILICON STACKED GATE MOS TECHNICAL DATA 131,072 W O R D x 8 BIT CMOS ONE TIM E PROGRAMMABLE READ ONLY M E M O R Y DESCRIPTION T he TC 541000A P/ AF an d T C 541001A P / A F are a 131,072 word X 8 bit one tim e program m able

sharp lh53

Abstract: sharp lh53 1M
Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

MS3212

Abstract: hc 40201 MS3213 MS3213-1 MS3212-1 MS3212-31 MS3212-11 MS3212-2 MS3212-15 MS3212-21
Contextual Info: CROSS REFERENCE GOVERNMENT N.S.N. TO APM PART NUMBER GOVERNMENT N.S.N. APM PART NO. MIL SPEC NO. / QPL'D 1005-01-148-6507 ST 1/4-28 x 3/8 1005-01-158-4498 1113/60 1015-00-041-0370 HE 1015 M5423/14-05 1025-01-091-3590 4085 3192291 1075-00-508-4635 N 9065 x 3/8

Contextual Info: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)

531000B

Abstract: 531000
Contextual Info: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:

TC531000

Abstract: 531000CP TC531000C
Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - 531000CP/CF-12,-15 1M BIT 128K W O R D x 8 BIT C O M S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 0 0 0 C P /C F is a 1, 048, 576 b its re a d only m em ory o rgan ized a s 131, 072 w ords b y 8 b its

avalon vhdl byteenable

Abstract: avalon vhdl Avalon master slave object counter circuit
Contextual Info: Avalon Verification IP Suite User Guide 101 Innovation Drive San Jose, CA 95134 www.altera.com Software Version: Document Date: Preliminary 10.0 August 2010 Copyright 2010 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other

28T0157

Abstract: Chip Ferrite Beads For GHz Range Noise Suppressor CM501 b0735 HI1206T161 HR2220V801 HI1206N101 A-0393 transformer eaton el 198 CM3032V301
Contextual Info: 1 ' TECHNICALREFERENCELIBRARY D0N0TREM0VE . rf Ir- i1 L.1 • § « s r— j k\ ISrjï I!k\J1rB1i 1u'9t Mi, * ?<rmk m y & .~ r 'j. 1 fj -f —J _ / ^ “ l* -yM Ferrite Solutions for Printed C ircuit Boards Cables and Connectors Ninth Edition ISO 9001 and QS 9000 Certified

LH531000B

Abstract: LH531000BN-S LH531000B-S
Contextual Info: 531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)

DRAN60-24A

Abstract: switching power supply -24VDC -48VDC 5A schematic diagram 230VAC to 24VDC POWER SUPPLY
Contextual Info: DRAN60 SERIES AC - DC DIN RAIL MOUNTABLE POWER SUPPLY INDUSTRIAL CONTROL EQUIPMENT FEATURES • UL/cUL/TUV/CE • UNIVERSAL INPUT 85~264VAC • SHORT CIRCUIT PROTECTION • INTERNAL INPUT FILTER • 3 YEARS WARRANTY : 5l 118 c^^kus c ^ ^ u s LISTED EN 61558-1

ic 7493 block diagram

Contextual Info: HY531OOOA Series HYUNDAI 1M X 1 -b it CMOS DRAM DESCRIPTION The HY531 OOOA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531 OOOAutilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

LH531000B

Abstract: LH531000BN-S LH531000B-S
Contextual Info: 531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.

Contextual Info: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:

mrom

Abstract: LH531000B
Contextual Info: 531000B CMOS 1M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22

531000P

Contextual Info: 131,072 W O R D x 8 BIT C M O S UV ERASABLE A N D ELECTRICALLY P R O G R A M M A B L E READ O NLY M E M O R Y PRELIMINARY DESCRIPTION , The TC57H1000AD/TC57H1001AD is a 131,072 word X 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory.

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

lh5359

Abstract: e5bx
Contextual Info: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.

431 capacitor NCC

Contextual Info: 531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)