tc531000p
Abstract: TC541000AP TC531000
Text: h >í i t v a r v / A i t L y v .in v ^ u i i TC541000AP / AF - 12, -1 5 TC541001AP/AF -1 2 , -1 5 SILICON STACKED GATE MOS TECHNICAL DATA 131,072 W O R D x 8 BIT CMOS ONE TIM E PROGRAMMABLE READ ONLY M E M O R Y DESCRIPTION T he TC 541000A P/ AF an d T C 541001A P / A F are a 131,072 word X 8 bit one tim e program m able
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TC54100Ã
AP/AF-12,
TC541001AP/AF
TC541000AP
TC541001AP/
TC541000AP/AF
120ns/150ns
TC571000AD/TC571001AD
tc531000p
TC531000
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d213g
Abstract: 531000P
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC541OOOAP/AF-12, -15 TC541001AP/AF-12,-15 1 3 1 ,0 7 2 W O R D x 8 BIT C M O S O N E T IM E P R O G R A M M A B L E R E A D O N L Y M E M O R Y DESC RIPTIO N T h e T C 5 4 1 0 0 0 A P / A F a n d T C 5 4 1 0 0 1 A P / A F a re a 131,072 w ord X 8 b i t o n e tim e p ro g ra m m a b le
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TC541OOOAP/AF-12,
TC541001AP/AF-12
5410G
d213g
531000P
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