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    51169 Price and Stock

    Wurth Elektronik 9775116960R

    ROUND SPACER STEEL 1MM
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    DigiKey 9775116960R Digi-Reel 445 1
    • 1 $1.3
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    9775116960R Cut Tape 445 1
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    9775116960R Reel 300 300
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    Newark 9775116960R Cut Tape 17 1
    • 1 $1.45
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    WAGO Innovative Connections 285-1169

    TERM BLK 10POS BLUE/GRAY/GRN/YLW
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    DigiKey 285-1169 Box 5 1
    • 1 $415.92
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    Newark 285-1169 Bulk 1
    • 1 $394.22
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    Altech Corporation 51.169R

    FOOT SWITCHFS1SU1P01LUSTDCLRGD 1
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    Newark 51.169R Bulk 1
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    RS 51.169R Bulk 5 Weeks 1
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    TestEquity LLC 51.169R
    • 1 $496.25
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    SICK AG 6051169

    PFT-SAB6X0AG1SSAAMSSZ
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    DigiKey 6051169 Box 1
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    Hirschmann Electronics GmbH & Co Kg AC251169

    CBL RJ45-RJ45 152N-YEL
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    DigiKey AC251169 Bulk 1
    • 1 $62.37
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    51169 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5-116975-4 TE Connectivity Rectangular Connectors - Housings, Connectors, Interconnects, CONN HOUSING RCPT .100CL 106POS Original PDF

    51169 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


    OCR Scan     		LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-pin LH5116H PDF

    B57861S0103F040

    Abstract: EPCOS b57861 25727 15521 101490 B57861S0103H040 B57861 5103 5638-10 B57861S0103J040 B57861S0502 040
    Text: NTC thermistors for temperature measurement Miniature sensors with bendable wires Series/Type: Date: B57861 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		B57861 E69802) B57861S0103F040 EPCOS b57861 25727 15521 101490 B57861S0103H040 B57861 5103 5638-10 B57861S0103J040 B57861S0502 040 PDF

    A5 GNC

    Abstract: TSOP32-P-4QO-K 51V17400 5116100
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64m A5 GNC TSOP32-P-4QO-K 51V17400 5116100 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).


    OCR Scan     		LH5116/H LH5116/H 24-PIN Three-sP-0600) 24-pin, 300-mil DIP024-P-0300) PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


    OCR Scan     		LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN PDF

    5116 ram

    Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


    Original     		LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN 5116 ram LH5116H DIP024-P-0600 SOP024-P-0450B 0450b PDF

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750 PDF

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


    Original     		LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN LH5116H PDF

    S862

    Abstract: EPCOS 4641 3030-70 352580 B57862S0103F040 B57862 NTC 10 1042 B57862S0282F040 85948 DATASHEET OF ICls 741
    Text: NTC thermistors for temperature measurement Miniature sensors with bendable wires Series/Type: Date: B57862 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		B57862 S862 EPCOS 4641 3030-70 352580 B57862S0103F040 B57862 NTC 10 1042 B57862S0282F040 85948 DATASHEET OF ICls 741 PDF

    e33a

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM51V17190 576-Word 18-Bit MSM51V17190 2048cycles/32m e33a PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


    OCR Scan     		LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN PDF

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
    Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM5117190 576-Word 18-Bit MSM5117190 cycles/32ms Bv 42 transistor tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400 PDF

    LCD 1602 display

    Abstract: jrc 2360 supply JRC 2360 LCD 1602 2360 JRC LCD 1602 INTERFACE LCD display 1602 1602 lcd 1602 E lcd lcd 1602 a
    Text: NJ U6 580 PRELIMINARY BIT MAP LCD DRIVER • G E N E R A L D E S C R IP T IO N ■ The N JU 6580 is a bit map LCD driver to display graphics characters. P A C K A G E O U T LIN E or It contains 1,904 bits display data RAM, microprocessor inter face circuits, instruction decoder, 96-segm ent and 17-common 1


    OCR Scan     		NJU6580 96-segment 17-common 17-driver NJU6580C LCD 1602 display jrc 2360 supply JRC 2360 LCD 1602 2360 JRC LCD 1602 INTERFACE LCD display 1602 1602 lcd 1602 E lcd lcd 1602 a PDF

    168050

    Abstract: 51169 3030-70 EPCOS 4684 101490 56326 B57867S0103F140 B57867S0103J140 27304 tr 13002
    Text: NTC thermistors for temperature measurement Miniature sensors with bendable wires Series/Type: Date: B57867 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		B57867 E69802) 60inue 168050 51169 3030-70 EPCOS 4684 101490 56326 B57867S0103F140 B57867S0103J140 27304 tr 13002 PDF

    Untitled

    Abstract: No abstract text available
    Text: L H 5 1 1 6 / H CMOS 16K 2K x 8 S ta tic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


    OCR Scan     		LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN PDF

    uras 4

    Abstract: uras 2 5116100
    Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM5117190 576-Word 18-Bit MSM5117190 cycles/32m uras 4 uras 2 5116100 PDF

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original     		9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES CMOS 16K 2K x 8 Static RAM DESCRIPTION • 2,048 • Access time: 100 ns (M AX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


    OCR Scan     		LH5116 LH5116 24-PIN LH5116H: I------10 24-pin, 600-mil DIP24-P-600) PDF

    EPCOS 5025

    Abstract: 121-190 JIS K 5400 8.3 EPCOS 800 376 jis h 8502 B57221V2472J060 16888 440-240 B57221V2103J060 iec 90092
    Text: NTC thermistors for temperature measurement SMD NTC thermistors with nickel barrier termination, case size 0402 Series/Type: Date: B572*V March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number Search Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Part Number Search Home Part Number Search Enter Part Number If you do not know the exact part number, select "Contains" or "Starts With" as the Search Method. No special characters are


    Original     		PDF

    led 7 segment LDS 5161 AK

    Abstract: led 7 segment LDS 5161 AH 7-segment 4 digit LFD 5522 AKO 701 434 tdso 5160 k lds 7 segment LDS 5161 AK led 7 segment LDS 5161 As manual LG VARIABLE FREQUENCY DRIVE is3 -20/led 7 segment LDS 5161 AH ako 544 126
    Text: NAM E; C O M P A N Y :. ADDRESS; . . C IT Y ; S TA TE: Z IP : C O U N T R Y :. P H O N E N O .; . .I — ;.-,. ' - V- ORDER NO. QTY. TITLE fTTT ±j . • . n i i lU . . II 11 1 i i 1111 1-T 2 .-.


    OCR Scan     		X011-6 178Erasm X011-2712-803-8294 12thFloor, 15thFloor, 18479R X23756S led 7 segment LDS 5161 AK led 7 segment LDS 5161 AH 7-segment 4 digit LFD 5522 AKO 701 434 tdso 5160 k lds 7 segment LDS 5161 AK led 7 segment LDS 5161 As manual LG VARIABLE FREQUENCY DRIVE is3 -20/led 7 segment LDS 5161 AH ako 544 126 PDF

    transistor BU 102S

    Abstract: ford ecu pinout free transistor equivalent book 2sc National Semiconductor Audio Handbook 1NA101 2N5564 equivalent spice model Tame Transducer Bridge Errors With Op-Amp Feedback Control DAC729 tkp transformer 74ls324
    Text: K O PP GROUP ADVANCED SEMICONDUCTOR DEVICES PTY LTD. P.O. BOX 2944 JOHANNESBURG 2000 TEL. 802-5820 The Handbook of Linear 1C Applications The How-To Book for High-Performance Operational Amplifiers A/D Converters Instrumentation Amplifiers D/A Converters


    OCR Scan     		PDF

    Bv 42 transistor

    Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
    Text: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM51V17190_ 576-Word 18-Bit MSM51V17190 cycles/32ms Bv 42 transistor CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100 PDF

    DU9 308

    Abstract: 32-PIN MSM5117900-70 MSM5117900-80
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		MSM5117900 152-Word MSM5117900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN DU9 308 32-PIN MSM5117900-70 MSM5117900-80 PDF