500V 11A Search Results

FQPF*11n50cf

Abstract: FQPF11N50 fqpf11n50cf FQP11N50CF
Contextual Info: FRFET TM FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF11N50CF

Contextual Info: FRFET TM FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF*11n50cf

Abstract: FQP11N50CF FQPF11N50CF FQP11N50
Contextual Info: FRFET TM FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: R5011FNX R5011FNX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

irf450

Abstract: diode F451 IRF452 IRF451
Contextual Info: iH A R R is SEUIC0NDUCT0R IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: R5011FNX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

R5011ANX

Contextual Info: R5011ANX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.5W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

IRF452

Abstract: IRF450 IRF451 irf453
Contextual Info: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: KSM11N50CF/KSMF11N50CF 500V N-Channel MOSFET TO-220 TO-220F Features • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns)

transistor fda20n50

Abstract: F109 FDA20N50
Contextual Info: TM UniFET FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDA20

Abstract: *20N50F
Contextual Info: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

datasheet irfp460 mosfet

Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF452

Abstract: IRF453 IRF451 irf450
Contextual Info: IRF450, IRF451, IRF452, IRF453 S E M I C O N D U C T O R 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irfp460 dc motor circuit

Abstract: IRFP460 TB334
Contextual Info: IRFP460 Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP460 • 20A, 500V • rDS ON = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

2E12

Abstract: 3E12 FRK460D FRK460H FRK460R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: 3E12 FRK460D FRK460H FRK460R
Contextual Info: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FDA20N50

Contextual Info: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)

mosfet equivalent fda 59 n 30

Abstract: FDA20N50
Contextual Info: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)

FQPF9N50CF

Abstract: FQPF*9n50cf FQPF9N50C
Contextual Info: TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS on = 0.85Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 28 nC)

Contextual Info: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

TA17465

Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Contextual Info: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated