IRFP460 Search Results

irfp460

Abstract: irfp460 30v
Contextual Info: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE IRFP460 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

Contextual Info: PD-93946A IRFP460P l l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder Plated for Reflowing HEXFET Power MOSFET D VDSS = 500V RDS on = 0.27Ω G

IRFP460A

Contextual Info: IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche

IRFP460 APPLICATION NOTE

Abstract: IRFP460 application IRFP460 transistor irfp460 dc motor circuit
Contextual Info: IRFP460 Data Sheet Title FP4 bt A, 0V, 70 m, 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

IRFP460

Abstract: irfp460 power supply applications IRFP462 irfp460 dc motor circuit IRFP460 IR PED relay irfp460 i
Contextual Info: IRFP460, IRFP462 fÇ j HARRIS S E M I C O N D U C T O R 20A and 17A, 500V, 0.27 and 0.35 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 17A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFP460 S e m iconductor Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET • 2 0 A ,5 0 0 V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFP460LC

Abstract: SiHFP460LC IRFP460LCP
Contextual Info: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

IRFP460LCPBF

Abstract: marking 2x 035H IRFPE30
Contextual Info: PD - 94902 IRFP460LCPbF • Lead-Free www.irf.com 1 12/19/03 IRFP460LCPbF 2 www.irf.com IRFP460LCPbF www.irf.com 3 IRFP460LCPbF 4 www.irf.com IRFP460LCPbF www.irf.com 5 IRFP460LCPbF 6 www.irf.com IRFP460LCPbF www.irf.com 7 IRFP460LCPbF TO-247AC Package Outline

IRFP460C

Abstract: IRFP460C equivalent IRFP P CHANNEL MOSFET IRFP P CHANNEL
Contextual Info: IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

IRFP460N

Abstract: SiHFP460N
Contextual Info: IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

T0247AC

Abstract: IRFP450LC irfp9240
Contextual Info: HEXFET International Power MOSFETs liôR R ectifier TO-247AC Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-247AC N-Channel “Low Charge” Part Number IRFP350LC IRFP360LC IRFP450LC IRFP460LC

u400

Abstract: IRFP460 IC250 20U20
Contextual Info: Транзисторы для силовой электроники ПОЛЕВЫЕ ТРАНЗИСТОРЫ КП460 IRFP460 N-канальный МОП ПТ Uси=500 В; Rси=0.27 Ом; Iс=20 А z Высокие динамические характеристики

Contextual Info: International ggjRectifier P D - 9.1232 IRFP460LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced CjSS, Coss, CrgS Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

irfp460 dc motor circuit

Abstract: IRFP460 TB334
Contextual Info: IRFP460 Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP460 • 20A, 500V • rDS ON = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRP460

Abstract: IRFP460A SiHFP460A irp460a
Contextual Info: IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current

irfp460 mosfet

Contextual Info: IRFP460 Advanced Power MOSFET FEATURES B V = 500 V ^ D S o n = 0 .2 5 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

smd DIODE code marking 20A

Abstract: SMD-247 IRFP460AS MJ2400 smd code diode 20a mosfet 20A 500V
Contextual Info: PD-94011A IRFP460AS SMPS MOSFET Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements

035H

Abstract: IRFPE30
Contextual Info: PD - 94902 IRFP460LCPbF • Lead-Free 1 IRFP460LCPbF 2 IRFP460LCPbF TO-247AC Package Outline Dimensions are shown in millimeters inches -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 2.50 (.089) 1.50 (.059) 4 5.50 (.217)

IRFP460

Abstract: IRFP460 IR irfp460 mosfet
Contextual Info: International mg Rectifier 4ASS452 GD155M4 35T H I N R HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • • PD-9.512B IRFP460 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

IRFP460 application

Abstract: SOT429 IRFP460 APPLICATION NOTE IRFP460 PHW20N50E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated IRFP460 FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

1RFP460

Abstract: 1rfp460lc power mosfet 500v 20a circuit 12v 20A regulator IRFP460LC
Contextual Info: o rv f i -J n r I \~j - » . ItL C International IRectifier IO IRFP460LC R U C V C C T D lihÄi 1 1 r ~ > ~ . _ » « i 'A O I T C r T ruwei iviwortzi • Ultra Low G a te C harge • • R educed G a te Drive Requirem ent E nhanced 3 0 V V gs Rating »