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    3DQ10 Price and Stock

    Nexperia 74HC73D-Q100J

    IC FF JK TYPE DUAL 1BIT 14SO
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    DigiKey 74HC73D-Q100J Digi-Reel 9,830 1
    • 1 $0.57
    • 10 $0.403
    • 100 $0.3143
    • 1000 $0.26778
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    74HC73D-Q100J Cut Tape 9,830 1
    • 1 $0.57
    • 10 $0.403
    • 100 $0.3143
    • 1000 $0.26778
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    74HC73D-Q100J Reel 5,000 2,500
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    Avnet Americas 74HC73D-Q100J Reel 8 Weeks 5,000
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    Mouser Electronics 74HC73D-Q100J 2,849
    • 1 $0.57
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    • 100 $0.315
    • 1000 $0.268
    • 10000 $0.222
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    Newark 74HC73D-Q100J Cut Tape 947 1
    • 1 $0.593
    • 10 $0.375
    • 100 $0.305
    • 1000 $0.279
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    Diodes Incorporated AP7343DQ-10FDZW-7

    IC REG LIN 1V 300MA W-DFN2020-6
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    DigiKey AP7343DQ-10FDZW-7 Digi-Reel 3,000 1
    • 1 $0.69
    • 10 $0.412
    • 100 $0.2572
    • 1000 $0.17093
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    AP7343DQ-10FDZW-7 Cut Tape 3,000 1
    • 1 $0.69
    • 10 $0.412
    • 100 $0.2572
    • 1000 $0.17093
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    Mouser Electronics AP7343DQ-10FDZW-7 2,999
    • 1 $0.68
    • 10 $0.406
    • 100 $0.258
    • 1000 $0.169
    • 10000 $0.117
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    Nexperia 74HC4053D-Q100,118

    IC SWITCH SPDT X 3 120OHM 16SO
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    DigiKey 74HC4053D-Q100,118 Digi-Reel 2,098 1
    • 1 $0.46
    • 10 $0.32
    • 100 $0.2473
    • 1000 $0.20941
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    74HC4053D-Q100,118 Cut Tape 2,098 1
    • 1 $0.46
    • 10 $0.32
    • 100 $0.2473
    • 1000 $0.20941
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    Mouser Electronics 74HC4053D-Q100,118 1,211
    • 1 $0.46
    • 10 $0.32
    • 100 $0.248
    • 1000 $0.21
    • 10000 $0.155
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    Rochester Electronics 74HC4053D-Q100,118 14,520 1
    • 1 $0.1494
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    • 100 $0.1404
    • 1000 $0.127
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    Avnet Silica 74HC4053D-Q100,118 10 Weeks 2,500
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    EBV Elektronik 74HC4053D-Q100,118 5,000 10 Weeks 2,500
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    Nexperia 74HC123D-Q100,118

    IC MULTIVIBRATOR 65NS 16SO
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    DigiKey 74HC123D-Q100,118 Cut Tape 2,007 1
    • 1 $0.42
    • 10 $0.293
    • 100 $0.2261
    • 1000 $0.19096
    • 10000 $0.19096
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    74HC123D-Q100,118 Digi-Reel 2,007 1
    • 1 $0.42
    • 10 $0.293
    • 100 $0.2261
    • 1000 $0.19096
    • 10000 $0.19096
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    Avnet Americas 74HC123D-Q100,118 Reel 8 Weeks 7,500
    • 1 -
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    • 10000 $0.11625
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    Mouser Electronics 74HC123D-Q100,118 4,648
    • 1 $0.42
    • 10 $0.293
    • 100 $0.227
    • 1000 $0.191
    • 10000 $0.139
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    Newark 74HC123D-Q100,118 Cut Tape 2,982 1
    • 1 $0.14
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    Rochester Electronics 74HC123D-Q100,118 25,000 1
    • 1 $0.1279
    • 10 $0.1279
    • 100 $0.1202
    • 1000 $0.1087
    • 10000 $0.1087
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    Avnet Silica 74HC123D-Q100,118 10 Weeks 2,500
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    EBV Elektronik 74HC123D-Q100,118 10 Weeks 2,500
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    Vyrian 74HC123D-Q100,118 5,595
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    Nexperia 74HCT573D-Q100,118

    IC TRANSP LATCH OCTAL D 20SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 74HCT573D-Q100,118 Cut Tape 1,778 1
    • 1 $0.64
    • 10 $0.452
    • 100 $0.3538
    • 1000 $0.30235
    • 10000 $0.30235
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    74HCT573D-Q100,118 Digi-Reel 1,778 1
    • 1 $0.64
    • 10 $0.452
    • 100 $0.3538
    • 1000 $0.30235
    • 10000 $0.30235
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    Avnet Americas 74HCT573D-Q100,118 Reel 8 Weeks 4,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.19666
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    Mouser Electronics 74HCT573D-Q100,118 386
    • 1 $0.64
    • 10 $0.452
    • 100 $0.354
    • 1000 $0.259
    • 10000 $0.232
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    Rochester Electronics 74HCT573D-Q100,118 38,000 1
    • 1 $0.2217
    • 10 $0.2217
    • 100 $0.2084
    • 1000 $0.1884
    • 10000 $0.1884
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    Avnet Silica 74HCT573D-Q100,118 10 Weeks 2,000
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    EBV Elektronik 74HCT573D-Q100,118 10 Weeks 2,000
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    Vyrian 74HCT573D-Q100,118 15,489
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    Find more 3DQ10 price and stock on Findchips.com

    3DQ10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    amd 29F400AB

    Abstract: 29F400AT 29F400AB
    Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		Am29F400AT/Am29F400AB S-Bit/262 16-Bit) 44-pin 48-pin Am29F400AT/Am 29F400AB Am29F400T/Am29F400B 18612B. amd 29F400AB 29F400AT 29F400AB PDF

    KM416C64

    Abstract: No abstract text available
    Text: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption


    OCR Scan     		KM416C64 64Kx16 KM416C64/L KM416C64 PDF

    U4B R950

    Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
    Text: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original     		MPC8560 MPC8560UG CH370 U4B R950 PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 2 5 6 K x 16 Bit C M O S Dynamic RA M with Fast Page Mode DESCRIPTION This is a family of 262.144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage -*-5.0V or +3.3V , access time


    OCR Scan     		KM416C256D, KM416V256D 256Kx16 DQODQ15 PDF

    Untitled

    Abstract: No abstract text available
    Text: AM DH 5.0 Am29F200B V- o nl y 2 Megabit 256 K X 8-BK/128 K X 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory Flas DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


    OCR Scan     		Am29F200B 8-BK/128 16-Blt) Am29F200A 20-year PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1004BJ 1Mx16 DD302t4 D0302bS Q03D2bb PDF

    RA5E

    Abstract: 100 CJB equivalent D0232
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416C254D, KM416V254D 256Kx16 RA5E 100 CJB equivalent D0232 PDF

    3DQ10

    Abstract: ICC1 EDI8L32512C20AI
    Text: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory


    OCR Scan     		EDI8L32512C 512KX32 512Kx32CMOSHigh EDI8L32512C DSP96002 TMS320C3X, TMS320C4x MO-47AE 3DQ03 3DQ10 ICC1 EDI8L32512C20AI PDF

    3DQ10

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or to w power) and


    OCR Scan     		KM416C256D, KM416V256D 16Bit 256KX16 3DQ10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58F400/401FI/FTI-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x8 BITS/262,144 WORDS x16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized


    OCR Scan     		TC58F400/401FI/FTI-90 BITS/262 TC58F400/401 304-bit 44-pin 48-pin FI/FTI-90 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM4 1 6 V 2 5 4 D T CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		256Kx16 KM416V254DT 324Sb PDF

    16v1204

    Abstract: C1204B KM416V1204BJ 74142 74142 NOTE
    Text: KM416V1204BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416V1204BJ 1Mx16Bit 1Mx16 Q323tà 5CK44 -TSOP2-400R 825-ooc 35-q1q 003b2b0 16v1204 C1204B KM416V1204BJ 74142 74142 NOTE PDF

    HY514260

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY514260 Series 2 5 6 K X 1 6 - b lt C M O S DRAM w tth 2 C A S PRELIMINARY DESCRIPTION The HY514260 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		HY514260 16-bit 400mil 40pln 40/44pin 1AC11-00-APR93 HY514260JC PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416C1204BT 1Mx16 416C1204BT D03D425 DD3G42h PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		KM416C256B, KM416V256B 256Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC58F400/401 FI/FTI-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized


    OCR Scan     		TC58F400/401 FI/FTI-90 BITS/262 304-bit 44-pin 48-pin PDF