HY514260
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY514260 Series 2 5 6 K X 1 6 - b lt C M O S DRAM w tth 2 C A S PRELIMINARY DESCRIPTION The HY514260 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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HY514260
16-bit
400mil
40pln
40/44pin
1AC11-00-APR93
HY514260JC
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PDF
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HY514260
Abstract: WRC-15 a08andoe
Text: -HYUNDAI SEMICONDUCTOR H Y514260 Series 256Kx 16-blt CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY514260 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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HY514260
256Kx
16-bft
16-bit
400mil
40pin
40/44pin
1AC11-00-APR93
WRC-15
a08andoe
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PDF
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hy514260
Abstract: No abstract text available
Text: "HYUNDAI HY514260 Seríes SEMICONDUCTOR 256K X 16-blt CM O S DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY514260 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
|
OCR Scan
|
HY514260
16-blt
16-bit
400mil
40pin
40/44pin
1AC11-00-APR93
4L7506B
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PDF
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