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IXYS Corporation IXSK35N120BD1 IGBT PT 1200V 70A TO-264AA
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DigiKey	IXSK35N120BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSR35N120BD1 IGBT PT 1200V 70A ISOPLUS247
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IXYS Corporation IXSX35N120BD1 IGBT PT 1200V 70A PLUS247
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DigiKey	IXSX35N120BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGK35N120BD1 IGBT 1200V 70A TO-264
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DigiKey	IXGK35N120BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXGK35N120BD1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGR35N120BD1 IGBT 1200V 54A ISOPLUS247
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DigiKey	IXGR35N120BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXGR35N120BD1					1 - 10 - 100 - 1000 - 10000 -	Get Quote

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35N120BD1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
35N120 Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20	Original	247TM 35N120BD1 728B1 35N120	PDF
Contextual Info: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	247TM 35N120BD1	PDF
Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20	Original	247TM 35N120BD1 728B1	PDF
IXGX Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	35N120B 35N120BD1 O-264 247TM 728B1 IXGX	PDF
Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	247TM 35N120BD1 728B1	PDF
IXGR35N120BD1 Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300 Contextual Info: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200	Original	35N120BD1 IC110 IF110 405B2 IXGR35N120BD1 igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300	PDF
Contextual Info: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200	Original	35N120BD1 IC110 IF110 405B2	PDF
Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	35N120B 35N120BD1 35N120BD1 O-264 247TM 728B1	PDF
35N120BD1 Abstract: PLUS247 592 diode 35N120B 247 AA 35N12 35n120 Contextual Info: High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	35N120BD1 O-264 O-247 35N120BD1 PLUS247 592 diode 35N120B 247 AA 35N12 35n120	PDF
Contextual Info: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	35N120BD1 IC110 IF110 405B2	PDF
Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V = 70 A IC25 VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	35N120B 35N120BD1 35N120BD1 O-264 247TM 728B1	PDF
35N120 Contextual Info: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	35N120BD1 IC110 IF110 35N120	PDF
Contextual Info: High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol TO-264 AA IXSK Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35N120BD1 O-264	PDF
Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	35N120B 35N120BD1 O-264 247TM 728B1	PDF