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    35N120B Price and Stock

    IXYS Corporation IXGT35N120B

    IGBT PT 1200V 70A TO-268AA
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    IXYS Corporation IXSH35N120B

    IGBT PT 1200V 70A TO-247AD
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    IXYS Corporation IXGK35N120B

    IGBT PT 1200V 70A TO-264
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    IXYS Corporation IXGR35N120B

    IGBT PT 1200V 70A ISOPLUS247
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    IXYS Corporation IXGH35N120B

    IGBT PT 1200V 70A TO-247AD
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    Chip 1 Exchange IXGH35N120B 2,668
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    New Advantage Corporation IXGH35N120B 1,630 1
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    35N120B Datasheets Context Search

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    35N120

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original     		247TM 35N120BD1 728B1 35N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C


    Original     		35N120B O-268 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		247TM 35N120BD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXSH 35N120B IXST 35N120B IGBT "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		35N120B 35N120B O-247 O-268 O-247) PDF

    ixgh35n120b

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C


    Original     		35N120B 35N120B O-268 O-247 ixgh35n120b PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original     		247TM 35N120BD1 728B1 PDF

    IXGX

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35N120B 35N120BD1 O-264 247TM 728B1 IXGX PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFASTTM IGBT IXGH 35N120B VCES = 1200 V = 70 A IXGT 35N120B IC25 VCE sat = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20


    Original     		35N120B O-268 O-247 O-268) PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		35N120B O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		247TM 35N120BD1 728B1 PDF

    IXGR35N120BD1

    Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300
    Text: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200


    Original     		35N120BD1 IC110 IF110 405B2 IXGR35N120BD1 igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200


    Original     		35N120BD1 IC110 IF110 405B2 PDF

    35n120

    Abstract: 35N120B 35N120C IXGR35N120B
    Text: VCES HiPerFASTTM IGBT ISOPLUS247TM IC25 VCE sat IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 70 A 4.0 V tfi(typ) 160 ns 115 ns (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		ISOPLUS247TM 35N120B 35N120C 35N120C 35n120 IXGR35N120B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35N120B 35N120BD1 35N120BD1 O-264 247TM 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C


    Original     		35N120B O-247 O-268 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCES HiPerFASTTM IGBT ISOPLUS247TM IC25 VCE sat IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 70 A 4.0 V tfi(typ) 160 ns 115 ns (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		ISOPLUS247TM 35N120B 35N120C 35N120C PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		35N120BD1 IC110 IF110 405B2 PDF

    98669B

    Abstract: No abstract text available
    Text: IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V


    Original     		35N120B O-247 728B1 98669B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V = 70 A IC25 VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35N120B 35N120BD1 35N120BD1 O-264 247TM 728B1 PDF

    35N120

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		35N120BD1 IC110 IF110 35N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXSH 35N120B IXST 35N120B IGBT "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		35N120B 35N120B O-247 O-268 O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol TO-264 AA IXSK Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		35N120BD1 O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35N120B 35N120BD1 O-264 247TM 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V


    Original     		35N120B O-247 728B1 PDF