35N12 Search Results
35N12 Price and Stock
Infineon Technologies AG IPD35N12S3L24ATMA1MOSFET N-CH 120V 35A TO252-3 |
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IPD35N12S3L24ATMA1 | Cut Tape | 8,565 | 1 |
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IPD35N12S3L24ATMA1 | 23,679 |
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IPD35N12S3L24ATMA1 | 12,327 | 1 |
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IPD35N12S3L24ATMA1 | 143 Weeks | 2,500 |
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Goford Semiconductor GT035N12TMOSFET N-CH 120V 180A TO-220 |
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GT035N12T | Tube | 572 | 1 |
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Orient Display Ltd AFY320240B0-3.5N12NTM-C2GRAPHIC DISPLAY TFT - 3.5" |
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AFY320240B0-3.5N12NTM-C2 | Bag | 97 | 1 |
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Amphenol Communications Solutions 70235-N126METRAL SIGNAL HEADER-8 MOD 4ROW |
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70235-N126 | Tube |
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IXYS Corporation IXGX35N120BIGBT PT 1200V 70A PLUS247 |
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IXGX35N120B | Tube |
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35N12 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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35N120D1
Abstract: D-68623 IXER 35N120D1
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35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1 | |
35n120au1
Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
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35N120AU1 35n120au1 IXSX35N120AU1 IGBT 500V 35A 35N120AU | |
35N120Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 |
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247TM 35N120BD1 728B1 35N120 | |
IGBT 500V 35A
Abstract: 35n120a
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35N120A O-247 S35N12 IXSH35N120 IGBT 500V 35A 35n120a | |
Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C |
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35N120B O-268 O-247 | |
Contextual Info: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C |
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35N120C O-247 O-268 | |
IXSN35N120Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings |
OCR Scan |
35N120AU1 OT-227 IXSN35N120AU1 4bflb22b IXSN35N120 | |
Contextual Info: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW |
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247TM 35N120BD1 | |
IXLK35N120AU1Contextual Info: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous |
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35N120AU1 IXLK35N120AU1 | |
IXLN35N120AU1Contextual Info: IGBT with Diode IXLN 35N120AU1 VCES I C25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous |
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35N120AU1 IXLN35N120AU1 | |
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous |
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35N120AU1 150perature | |
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous |
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35N120AU1 O-247TM IXSX35N120AU1) | |
Contextual Info: IXSH 35N120B IXST 35N120B IGBT "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous |
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35N120B 35N120B O-247 O-268 O-247) | |
ixgh35n120bContextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C |
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35N120B 35N120B O-268 O-247 ixgh35n120b | |
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Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 |
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247TM 35N120BD1 728B1 | |
IXGXContextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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35N120B 35N120BD1 O-264 247TM 728B1 IXGX | |
Contextual Info: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings |
OCR Scan |
35N120AU1 O-264 | |
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGH 35N120B VCES = 1200 V = 70 A IXGT 35N120B IC25 VCE sat = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 |
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35N120B O-268 O-247 O-268) | |
Contextual Info: Advanced Technical Information IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW |
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35N120B O-247 | |
Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 |
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247TM 35N120BD1 728B1 | |
Contextual Info: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25 |
OCR Scan |
35N120AU1 to150 O-264AA JEDECTO-264AA 35N120AU1 | |
DIODE 0644
Abstract: 35N120D1 IXER 35N120D1 diode RG 39
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35N120D1 ISOPLUS247TM 247TM E153432 DIODE 0644 35N120D1 IXER 35N120D1 diode RG 39 | |
35N120D1
Abstract: D-68623 8200T u2003
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35N120D1 247TM E153432 35N120D1 D-68623 8200T u2003 | |
IXGR35N120BD1
Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300
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35N120BD1 IC110 IF110 405B2 IXGR35N120BD1 igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300 |