PLC water heater plc
Abstract: G3PF225B-CTB PLC RELAY OMRON G3PF225B g3pf G32A-EA relay dc24v omron
Text: Solid State Relays with Built-in Current Transformer G3PF CSM_G3PF_DS_E_6_1 A New-concept SSR with Built-in Current Transformer. Heater Burnout and SSR Shortcircuit Failure Detection. • Built-in Current Transformer CT helps reduce wiring steps. • Detects the burnout of any one of a group of heaters.
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Untitled
Abstract: No abstract text available
Text: Solid State Relays with Built-in Current Transformer G3PF CSM_G3PF_DS_E_7_2 A New-concept SSR with Built-in Current Transformer. Heater Burnout and SSR Shortcircuit Failure Detection. • Built-in Current Transformer CT helps reduce wiring steps. • Detects the burnout of any one of a group of heaters.
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G32AE
Abstract: PLC water heater plc
Text: Solid State Relays with Built-in Current Transformer G3PF CSM_G3PF_DS_E_7_1 A New-concept SSR with Built-in Current Transformer. Heater Burnout and SSR Shortcircuit Failure Detection. • Built-in Current Transformer CT helps reduce wiring steps. • Detects the burnout of any one of a group of heaters.
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PLC water heater plc
Abstract: No abstract text available
Text: Solid State Relays with Built-in Current Transformer G3PF CSM_G3PF_DS_E_3_1 A New-concept SSR with Built-in Current Transformer. Heater Burnout and SSR Shortcircuit Failure Detection. • Built-in Current Transformer CT helps reduce wiring steps. • Detects the burnout of any one of a group of heaters.
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PLC water heater plc
Abstract: G32A-EA heat exchanger 2 form c ssr EN 60947-4-3 phototriac "three phase" control PLC ventilation CONTROL
Text: Product News Solid State Relays with Built-in Current Transformer G3PF Built-in CT: A New Concept in SSRs! The SSR can now detect heater burnout and SSR short-circuit failure. Heater Burnout Detection SSR Short-circuit Detection Reduced Wiring Easy Setting
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6835-3011/Fax:
21-5037-2222/Fax:
J169-E1-01
PLC water heater plc
G32A-EA
heat exchanger
2 form c ssr
EN 60947-4-3
phototriac "three phase" control
PLC ventilation CONTROL
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marking code 46B
Abstract: SMB5922B SMB5923B SMB5924B SMB5925B zener 35b SMB 234
Text: SMB5921B series Surface Mount Zener Diodes SURFACE MOUNT ZENER DIODES 3.0 WATTS P b Lead Pb -Free Features: * Glass passivated chip * Low leakage * Built-in strain relief * Low inductance * High peak reverse power dissipation * For use in stabilizing and clipping circuits with
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SMB5921B
DO-214AA)
SMB/DO-214AA
MIL-STD-750
04-Nov-09
marking code 46B
SMB5922B
SMB5923B
SMB5924B
SMB5925B
zener 35b
SMB 234
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Untitled
Abstract: No abstract text available
Text: H U^i5 B 35B 300Vin / 3.3Vout / 75Watts Features Model Number V300C3V3C75A DC-DC Converter Module • DC input range: 180 - 375V • Input surge withstand: 400V for 100ms • DC output: 3.3V 2.5V with external trim * • Programmable output: 10 to 110% • Regulation: +0.4% no load to full load
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100ms
300Vin
75Watts
V300C3V3C75A
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2SK2235
Abstract: DDS3400 44t transistor DDS34
Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm
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DDS3400
2SK2235
300juA
20kfi)
O-22QAB
O-220
50URCE
O-220FL
00E3b43
44t transistor
DDS34
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Untitled
Abstract: No abstract text available
Text: • 1R7MS03 G0Q04Ô0 35b ■ : « i .* r o f « i r Product Specifications January 1996 CMM2306 SOOto 2700 MHz Broadband Driver Amplifier 1 o f 4 Features □ +17.5 dBm Output Power □ Low Current: 70 mA, Typ. □ 800 - 2700 MHz Operation □ Single +3V to +6V Supply
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1R7MS03
G0Q04Ã
CMM2306
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74HC245
Abstract: No abstract text available
Text: • 5bE D 7^237 0040072 35b fî. T - f Z - Z Z - v T M54HC245/640/643 M74HC245/640/643 S G S -T H O M S O N £ ISGTH iy OCTAL BUS TRANSCEIVER 3-STATE HC245 NON INVERTING, HC640 INVERTING, HC643 INVERTING/NON INVERTING PRELIMINARY DATA S G S-THOMSON HIGH SPEED
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M54HC245/640/643
M74HC245/640/643
HC245
HC640
HC643
M54HCXXX
M74HCXXX
74HC245
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ZENER 34b
Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
ZENER 34b
zener diode 33B
marking 43b
zener 35b
52B zener
46B zener
Zener diode 81A
MARKING 46B
47B diode
43B diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR66 Silicon PIN Diode Array • • • Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code taped Pin Configuration 1 2 A1 Q62702-A1473
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BAR66
Q62702-A1473
OT-23
012Q244
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ZENER 34b
Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
CMBZ-5252B
CMBZ-5253B
CMBZ-5254B
ZENER 34b
5252B
5255B
zener diode 33B
43B MARKING
8f zener
40b marking
diode 43b
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diode marking 63s SOT23
Abstract: No abstract text available
Text: SIEMENS BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration A1/A2 m nr Ordering Code Pin Configuration
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Q62702-A879
Q62702-A961
OT-23
Q62702-A962
Q62702-A963
AE35bD5
01203b0
diode marking 63s SOT23
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equivalent bav20
Abstract: BAV100 BAV103 BAV18 BAV19 BAV20 BAV21 DO-213AA smd BAV20 BKC Semiconductors
Text: DO-35 High Voltage Switching Diodes BAV18 thru BAV21 Applications High voltage, Fast switching silicon diodes, high performance replacement for small signal devices. Particularly useful in industrial and test equipment. Used in steering, biasing and coupling applications. Efficient switching in
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DO-35
BAV18
BAV21
DO-213AA)
0BAV21
DO-213AA
BAV21famiIy
BAV100
equivalent bav20
BAV103
BAV19
BAV20
BAV21
smd BAV20
BKC Semiconductors
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Untitled
Abstract: No abstract text available
Text: 3 . ¡S ^ ü Îx /W y a y I j. . i n - . / ; / j . lounting Device Surface Mounting ^ > s I -• Y Schottky Barrier Diode Twin Diode vÜ£E] OUTLINE DIMENSIONS DE10PC3 30V 10A •S M D • ¡ B Ì £ V f = 0 .4 V m & • n ''7 ^ u - ia s f f i± • D C tÜ ^ O R ffl
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DE10PC3
-25-C
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1300 nm Laser in Receptacle Package, High Power STH 51007X • • • • Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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51007X
51007G
062702-Pxxxx
a1007X
flE35bOS
D073b3b
0073b37
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photoresistor LDR 1000
Abstract: Photoresistor photoresistor LDR Heimann LT2011 Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR
Text: S I EM EN S A K T I E N G E S E L L S C H A F 47E T> fl23Sb05 4 • SIEG ~ M Ì - S I Opto-couplers Heimann op to-coupler consist of a com bi nation of extremely high-intensity light em it ting diodes LED as emitters and specific photocell as detectors. Both elements are
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/002L
LT2002
LT2001
LT2011
photoresistor LDR 1000
Photoresistor
photoresistor LDR
Heimann
Heimann lt
Diode LT 02
Siemens optocoupler IL
ldr photocell
Photocell LDR
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CMBZ-5240B
Abstract: No abstract text available
Text: 'IL CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1= ANODE 2= NC 3 = CATHODE 3.0_ ~ 2.8 0.14 0.48 538 3 2.6 2.4 _1.02 o.ar 2.00_ 1.80 0.60 0.40 Marking CMBZ5230B 31B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
ma-5246B
CMBZ-5247B
CMBZ-5248B
CMBZ-5249B
CMBZ-5250B
CMBZ-5240B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes PBYR1645B series schottky GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface
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PBYR1645B
OT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier_ GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored
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OT404
PBYR1045B
PBYR10Repetitive
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erm 38b
Abstract: 5252B
Text: CMBZ52XX series CDIL SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun Pin configuration 1= ANODE 2 = NC 3 = CATHODE 3.0 2.8 0.14 0.48 0.38 3 2.6 2.4 — I- T •FT 1.02 I 0.89 2 .00 _ 0,60 0.40 1.80
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CMBZ52XX
BZ5248B
BZ5230B
CMBZ5239B
tMBZ-5250B
CMBZ-5251B
CMBZ-5252B
CMBZ-5253B
CMBZ-5254B
erm 38b
5252B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes > \ PBYR745B series schottky barrier_ '_ GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface
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PBYR745B
OT404
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h60V
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCH30A03L so a / sov FEATURES / lût liài OTO -220A B F ully M olded o D u a l D iodes - C athode C om m on o L ow F o rw a rd V o ltag e D rop O H igh S u rg e C apability 0 30 V o lts th ro u g h 60 V olts T y p e s A v ailable oTj = 150"C o p e ratio n
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-220A
FCH30A03L
FCH30A.
h60V
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