FL23SB05 Search Results

E3043

Abstract: E3062A
Contextual Info: fl23Sb05 0001337 4ñ0 S IE M E N S HITFET BTS 949 Smart Lowside Power Switch Features Product Summary • Logic Level Input Continious drain source • Input protection ESO On-state resistance • Thermal shutdown Current limitation • Overload protection

transistor BD 430

Abstract: 0436L
Contextual Info: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

9 ELEMENT photoDIODE ARRAY

Abstract: photodiode linear array
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D fl23Sb05 0 D 2 7 4 4 ‘Ì fi « S I E G SIEM ENS KOM 0622045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT ~ ~ p 4 i- 5 5 Outline Drawing Dimensions mm P C board Strip Chip •L Jki f LT^Lr 13.7 . 13.1 —I— 111 11j 11j 111

BFQ60

Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

KDS 7c

Abstract: A3116 DIODE S45 C67078-A3116-A2 156* diode
Contextual Info: flêD D SIEMENS • fl23Sb05 0Q1SQ0& h M S I E G AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^DS on = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode

photoresistor LDR 1000

Abstract: Photoresistor photoresistor LDR Heimann LT2011 Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR
Contextual Info: S I EM EN S A K T I E N G E S E L L S C H A F 47E T> fl23Sb05 4 • SIEG ~ M Ì - S I Opto-couplers Heimann op to-coupler consist of a com bi­ nation of extremely high-intensity light em it­ ting diodes LED as emitters and specific photocell as detectors. Both elements are

Contextual Info: bGE D fl23Sb05 G04b54fi Tfll • S I E G SIEMENS SFH 2310 GE-AVALANCHE PHOTODIODE TO PACKAGE SIEMENS AKTIENGESELLSCHAF Preliminary Data Sheet Package Dimensions in mm C hip Location FEATURES Maximum Ratings * Sensitive Receiver for the 2 nd W indow 1300 nm

Contextual Info: bOE D fl23Sb05 SIEMENS OOSQbOÜ MMT H S I E ä S I E M EN S A K T I E N G E S E L L S C H A F Intelligent Double Low-Side Switch 2 x 0.5 A TLE 4214 Bipolar IC Features • Double low-side switch, 2 x 0.5 A • Power limitation • Overtemperature shutdown

S20K385

Abstract: S14K385 S14K320 S10K420 S10K385 S10K460 S14K300 S14K460 S14K420 S20K1000
Contextual Info: SIEMENS AKTIENGESELLSCHAF bOE D Electrical Specifications, cont. Disc Types • fl23Sb05 OOSIMIS ST? « S I E G C h a ra c te ris tic s 2 5 ’ C M a x im u m R a tin g s ( 8 5 'C) Transient C o n tin u o u s P a rt N u m b e r E n e rg y '7' 2 ms P eak

Contextual Info: • fl23Sb05 OO^ÔÔSÔ TS^ SIEMENS 1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus SLx 24C01/02 Preliminary Features • Data EEPROM internally organized as 128/256 bytes and 16/32 pages x 8 bytes • Low power CMOS • Vcc = 2.7 to 5.5 V operation

siemens sda 30c164

Abstract: pwm fa 552 0071547 SBUR MB SDA30C164 TRANSISTOR BC 187 30C164 soh dl6 P07C SAB-C501
Contextual Info: SIEM EN S ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C164 * Preliminary Data Sheet 11.94 fl23Sb05 T4Ö \ SDA30C164 Revision History: Original Version: 11.94 Previous Releases: Page Subjects changes since last revision Data Classification

transistor d 1933

Abstract: transistor BF 52 transistor bf 505 transistor 23 505 transistor BF 500 transistor Q62702-F573 MSIE npn 505
Contextual Info: i«ü 1 ESC D • fl23Sb05 OGQHSQI b « S I E G ' -T -3 Ì NPN Silicon RF Transistor SIEMENS AKTIENCESELLSCHAF : 04509 BF 505 0' BF 505 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers in common emitter configuratin, VHF mixers and VHF/UHF oscillators.

Siemens PEB 2040

Abstract: d0422
Contextual Info: SIEMENS AKTIENGESEL LSCHAF S1E D Memory Time Switch MTS • fl23Sb05 DQMSESR MSS H S I E 6 PEB 2040 ~ P 7 5 - 1 I Prelim inary Data -H O N M O S 1C Features • • • • • •

zo 107 NA P 611

Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

B550 transistor

Abstract: diode 606 transistor r 606 j optocouple VF125 Not3
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E J> • S IEM EN S fl23Sb05 00272<ÏD fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%

transistor BD 424

Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202
Contextual Info: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets

transistor D 288

Abstract: TRANSISTOR L 287 A BD288 K1768 S100 transistor tcam BD287 Q62702-D900 Q62702-D901 Q62902-B62
Contextual Info: 2SC D • T - 3 3-'? fl23Sb05 000M3M2 7 M S I E 6 BD 287 BD 288 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 °- BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector Is electrically connected to the metallic mounting area.

1377B

Contextual Info: Consumer Electronics SAT Mixer-Oscillator-PLL TUA6110XS Data Sheet 16.6.99 V02 fl23Sb05 0137753 05=1 • Edition 16.02.98 Published by Infineon AG iGr, Marketing-Kommunikatlon, Balanstr. 73, 81541 Munich Infineon AG iGr 1999. All Rights Reserved. Attention please!

Contextual Info: bOE D • fl23Sb05 0D5G4bS b34 U S I E G EMENS SIEMENS AKTIEN6ESELLSCHAF TLE 4202 DC Motor Driver Bipolar 1C Features • Max. output current 3.0 A • Open-loop gain 80 dB typ. • PNP input stages • Large common-mode input-voltage range VPT0 5 1 0 8 • Wide control range

B550 transistor

Abstract: SFH606
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E J> • SIEM ENS fl23Sb05 0 0 2 7 2 fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%

DIODE SMD S44

Contextual Info: • fl23Sb05 O O ^ b T S SIEMENS Ô22 WË PROFET BTS 410 D2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • •

Contextual Info: • fl23Sb05 0 0 * 1 3 01 6 Sb^ ■ SIEMENS PROFET BTS 621 L1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

B32595-C5103-M

Contextual Info: fl23Sb05 0037bb4 7 MKT Chip Capacitors ISIEG f l ' 0 5 “- | r7 ' P 5 ' SIEMENS AKTIEN6ESELLSCHAF B 32S95 47E I p R E U M ' N A f W Preliminary data MKT capacitors, chip version, Ur = 50 V dc Self-healing capacitor with polyethyleneterephthalat dielectric; encapsulated in a flame-retardant

IL11

Abstract: DIN 50014 STANDARD PPS siemens 5300VDC dbl 2003
Contextual Info: fl23Sb05 0QHb3S7 IBS M S I E G bOE D SIEMENS IL8/IL10 6 LEADS IL9/IL11 4 LEADS SIEMENS AKTIENGESELLSCHAF PHOTOTRANSISTOR OPTOCOUPLER FEATURES * IL 8/IL 1 0 : F o u r Leads * IL 9/IL 1 1 : S ix L e ads w ith B ase C o n ta c t * 2 .0 m m M in. In tern a l S ep a ratio n