BAV18 Search Results

Philips FA 261

Abstract: BAV18 BAV21 CECC BAV19 BAV20 BAV21
Contextual Info: •I bbS3^31 □□2t.3DD OOfl HIAPX _ _ N ÀMER PHILIPS/DISCRETE b=!E » _ _ _ _ _ _ _ _ _ BAV18 to 21 A_ _ _ _ _ _ GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes In industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.

Contextual Info: DO-35 General Purpose Diode» 400 mW Electrical Characteristics (At Ta=25°C Type No. IR at VR PD PIV VF @ Unless Otherwise Specified IF Cd at VR=0 IFSM (mA) (A) trr min max (MA) (V) (W) (V) (V) (mA) BAV18 0.1 50 0.4 60 1.25 200 5 250 1 50 BAV19 0.1 100

Contextual Info: BAV18 … BAV21 Silicon-Planar-Diodes Silizium-Planar-Dioden Version 2004-10-01 250 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…200 V DO-35 SOD-27 Weight approx.

Contextual Info: BAV17, BAV18, BAV19, BAV20, BAV21 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

1N626

Abstract: 1N658 DSAIH000251 1N661
Contextual Info: K C • IN T E R N A T IO N A L BKC 2000 Series 30E * D ■ 1171163 Max avg Rectified Current l0 (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF) Volts mA mW Volts mA BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 20 25 60

equivalent bav20

Abstract: BAV100 BAV103 BAV18 BAV19 BAV20 BAV21 DO-213AA smd BAV20 BKC Semiconductors
Contextual Info: DO-35 High Voltage Switching Diodes BAV18 thru BAV21 Applications High voltage, Fast switching silicon diodes, high performance replacement for small signal devices. Particularly useful in industrial and test equipment. Used in steering, biasing and coupling applications. Efficient switching in

Contextual Info: BAV17, BAV18, BAV19, BAV20, BAV21 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

BAV17

Abstract: BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV17.BAV21 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Order Instruction Type Type Differentiation BAV17 VRRM = 25 V BAV18 VRRM = 60 V BAV19 VRRM = 120 V BAV20 VRRM = 200 V BAV21

d1n914

Abstract: bb204b BAV10
Contextual Info: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

DIODE BAV20

Contextual Info: BAV17, BAV18, BAV19, BAV20, BAV21 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

BAV18

Abstract: BAV19 BAV20 BAV21
Contextual Info: Philips Semiconductors Product specification General purpose diodes BAV18 to BAV21 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAV18, BAV19, BAV20, BAV21 are switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27

BAV21

Abstract: mbg459 BAV18 J BAV21 BAV19 BAV20 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV18 to BAV21 General purpose diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 19 Philips Semiconductors Product specification General purpose diodes BAV18 to BAV21

Contextual Info: BAV17, BAV18, BAV19, BAV20, BAV21 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: BAV17, BAV18, BAV19, BAV20, BAV21 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

bav 21 diode

Abstract: BAV17 BAV18 BAV19 BAV20 BAV21 bav 20 Diode BAV 19
Contextual Info: FAIRCHILD SEMICONDUCTOR ~Ô4 DE 1 3 4 ^ 7 4 D0H7EÔ7 1 | BAV17/BAV18/BAV19 BAV20/BAV21 T-oS-o* FAIR C HILD A S c h lu m b e rg e r C o m p a n y General Purpose Diodes PACKAGES • VF . . . 1.0 V Max) @ 1 0 0 mA • lR . . . 1 0 0 n A @ WIV A B S O L U T E M A X IM U M R A T IN G S ( N o t e 1)

BAV18

Abstract: BAV19 BAV20 BAV21
Contextual Info: BL GALAXY ELECTRICAL BAV18 - BAV21 VOLTAGE RANGE: 50-200 V CURRENT: 250 mA SMALL SIGNAL SWITCHING DIODE FEATURES DO - 35 GLASS Silicon epitaxial planar diode High speed switching diode 500 m W power dissipation MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode

1N4148 DO-34

Abstract: 1N4532 BB112 vhf diode BB212 bb809 BB910 SOD-69 1N4148 1N4149
Contextual Info: N AUER PHILIPS/DISCRETE 2SE D • bbSBTBl OOlbiaa 3 ■ T '-O 'S -O 'I 1o Small Signal Devices SWITCHING DIODES ; TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS11 BAV10 BAV18 BAV19 BAV20

BAV21 ITT

Abstract: itt 2501 itt diodes BAV100 itt diodes 120 BAV101 BAV102 BAV103 BAV18 BAV21
Contextual Info: ITT SEPIICOND/ I N T E R H E T A L L blE T> • 4E.ê2711 D 0 0 3 1 4 6 T74 M I S I BAV100 . . . BAV103 Silicon Epitaxial Planar Diodes Cathode Mark -35*0.1-/ - V for general purpose These diodes are also available in D O -35 case with the type designations BAV18 . . . BAV21.

equivalent bav20

Abstract: BAV100 BAV102 BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV18 . BAV21 BAV18 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2011-10-17 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case

Contextual Info: BAV18 . BAV21 BAV18 . BAV21 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2005-08-15 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case Glasgehäuse 3.9

Contextual Info: Electrical Characteristics At Ta=25°C Type No. IR at VR PD PIV VF min (V max (V) max 9 Unless Otherwise Specified IF Cd at VR=0 IO IFSM trr (mA) 1s (A) nsec max (mA) (UA) (V) (W) BAV18 0.1 50 0.4 60 1.25 200 5 250 1 50 BAV19 0.1 100 0.4 120 1.25 200 5 250

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D U bbSBIBl OOlbiafi 3 • T ' O ^ - O 0! Small Signal Devices SWITCHING DIODES PRO TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N 4446 1N 4448 1N 4449 1N4531 1N 4532 BAS11 BAV10 BAV18 BAV19 BAV20

BAV21

Contextual Info: • bb53131 0[]2b30D ODfl HIAPX N AMER PHILIPS/DISCRETE b'lE 3> BAV18 to 21 J V GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.

Contextual Info: Philips Semiconductors Product specification General purpose diodes B AV18 to BAV21 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAV18, BAV19, BAV20, BAV21 are switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27