30N30 Search Results

30N30 Price and Stock

Filter by Manufacturer


Nisshinbo Micro Devices RP130N301B-TR-FE IC REG LINEAR 3V 150MA SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RP130N301B-TR-FE	Cut Tape	69		1	1 $0.41 10 $0.283 100 $0.2178 1000 $0.18377 10000 $0.18377	Buy Now
	RP130N301B-TR-FE	Digi-Reel	69		1	1 $0.41 10 $0.283 100 $0.2178 1000 $0.18377 10000 $0.18377	Buy Now
Mouser Electronics	RP130N301B-TR-FE		69			1 $0.41 10 $0.252 100 $0.202 1000 $0.184 10000 $0.173	Buy Now
Rochester Electronics LLC FGPF30N30 IGBT, 300V, N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FGPF30N30	Tube			325	1 - 10 - 100 - 1000 $0.92 10000 $0.92	Buy Now
Rochester Electronics LLC FGPF30N30TTU IGBT, 300V, N-CHANNEL, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FGPF30N30TTU	Tube			329	1 - 10 - 100 - 1000 $0.91 10000 $0.91	Buy Now
KORATECH 000A0030N300L1252J 30N300mm1.25PP6 Kora-flex FFC*
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	000A0030N300L1252J	Bag			1	1 $20 10 $15 100 $5.9 1000 $0.8 10000 $0.8	Buy Now
SiTime Corporation SIT9365AI-4B1-30N30.720000 MEMS OSC XO 30.7200MHZ HCSL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT9365AI-4B1-30N30.720000				1	1 $14 10 $13.094 100 $12.1906 1000 $12.01004 10000 $12.01004	Buy Now

Find more 30N30 price and stock on Findchips.com

30N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
12n60c Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60 Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM	Original	PDF	O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
RAS 0510 SUN HOLD Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 Text: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.	Original	PDF	mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
30N30 Abstract: No abstract text available Text: HiPerFASTTM IGBT 30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	IXGH30N30 O-247 30N30
30n30 Abstract: IXGH30N30 Text: HiPerFASTTM IGBT 30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	IXGH30N30 O-247 30N30 30n30 IXGH30N30
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PDF	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	PDF	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh
SMD diode b24 Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64	OCR Scan	PDF	12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	PDF	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
96542B Abstract: 30N30 GEM X 365 Text: g ix Y S HiPerFAST IGBT 30N30 30N30S V CES 300 60 1.6 180 ^C25 V CE sat tfi V A V ns Preliminary data Symbol TestConditions v CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 Mß 300 V v GES Continuous ±20 V v GEM Transient ±30	OCR Scan	PDF	IXGH30N30 IXGH30N30S O-247 96542B 30N30 GEM X 365
30N30 Abstract: 96542B Text: HiPerFAST IGBT 30N30 30N30S vCES *C25 VCE sat 300 60 1.6 180 V A V ns Preliminary data Symbol Test Conditions VCES Tj = 25°Cto150°C 300 V vCGR ^ = 25°Cto150°C; RGE = 1 MO 300 V vGES Continuous ±20 V VGEM Transient ±30 V 60 A 30 A 120 A Maximum Ratings	OCR Scan	PDF	IXGH30N30 IXGH30N30S Cto150 O-247 30N30 96542B
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	PDF	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
30N30S Abstract: No abstract text available Text: aixYS HiPerFAST IGBT 30N30 30N30S CES C25 v" CE sat fi 300 60 1.6 180 V A V ns Preliminary data Symbol Test Conditions v CES v CGR Tj = 25°C to 150°C 300 V Tj = 25°C to 150°C; Rge = 1 MQ 300 V V» Continuous ±20 V VeEM T ransient ±30 V	OCR Scan	PDF	IXGH30N30 IXGH30N30S O-247 30N30S