30A AVALANCHE DIODE Search Results

W30NM60

Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

STW30NM60D

Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

Contextual Info: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■

P36NF06L

Abstract: p36nf06 STP36NF06L STB36NF06L B36NF06 JESD97 13-Mar-2006
Contextual Info: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■

30NF20

Abstract: STP30NF20 STW30NF20 JESD97
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ■ 100% avalanche tested

STW30N20

Abstract: W30N20
Contextual Info: STP30N20 STW30N20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30N20 200V 0.075Ω 30A 125W STW30N20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■ 100% avalanche tested

STB30N10

Abstract: airbag
Contextual Info: STB30N10 N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR PRELIMINARY DATA TYPE STB30N10 VDSS RDS on ID 100 V <0.07 Ω 30 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

AVALANCHE TRANSISTOR

Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Contextual Info: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

STW30NM60D

Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

P60NF06

Abstract: P60NF p60nf0 P60NF*06 P60*nf06 STP60NF06FP STP60 *p60nf06 p60n STripFET
Contextual Info: STP60NF06FP N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06FP 60V <0.016Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220FP

F1S30P05

Contextual Info: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model

DD 127 D TRANSISTOR

Abstract: STB30N10 transistor DD 127 D
Contextual Info: STB30N10 N - CHANNEL 100V - 0.06Ω - 30A - D2PAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB30N10 100 V < 0.07 Ω 30 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STP30NM30N

Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

P30NM30N

Abstract: STP30NM30N JESD97
Contextual Info: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance

Contextual Info: BUZ 30A Infineon Iftchnologi«* SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type VDS b ^DS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 £i TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current

STB30N10

Contextual Info: STB30N10 N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR PRELIMINARY DATA TYPE STB30N10 • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.07 Ω 30 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V Pin assignment: 1. Gate 2. Drain 3. Source ID = 55A RDS on , Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Features  Advanced trench process technology Fully Characterized Avalanche Voltage and Current

STB30N10

Contextual Info: STB30N10 N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR PRELIMINARY DATA TYPE STB30N10 • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V <0.07 Ω 30 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STW26NM50FD

Abstract: STW26NM50F 500v ZENER DIODE ZVS phase-shift converters schematic diagram welding device
Contextual Info: STW26NM50FD N-CHANNEL 500V - 0.10Ω - 30A TO-247 FDmesh Power MOSFET with FAST DIODE TARGET DATA TYPE STW26NM50FD • ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.12Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 N channel BUZ 30A Enhancement mode Avalanche-rated Pin1 Pin 2 Pin 3 D Type YDS ID BUZ 30A 200V 21 A Package ^DS(on) 0.130 TO-220 AB Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: ¿7/ STB30N10 N - CHANNEL 100V - 0.06Î2 - 30A - D2PAK POWER MOS TRANSISTOR TYPE V STB30N10 d ss 100 V R d S o ii < 0 .0 7 a Id 30 A TYPICAL R D S (on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

F1S30P06

Abstract: RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3
Contextual Info: RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 60V rDS ON = 0.065Ω Temperature Compensating PSPICE Model

f1s30p05

Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
Contextual Info: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model