f1s30p05
Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses
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RFG30P05,
RFP30P05,
RF1S30P05SM
TA09834.
f1s30p05
RF1S30P05SM
RF1S30P05SM9A
RFG30P05
RFP30P05
TB334
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F1S30P06
Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω
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RFG30P06,
RFP30P06,
RF1S30P06SM
TA09834.
O-247
O-220AB
O-263AB
175oC
TB334
RFP30P06
F1S30P06
F1S30
mosfet motor dc 48v
R*P30P06
RF1S30P06SM
RF1S30P06SM9A
RFG30P06
RFP30P06
TB334
F1S30P
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F1S30P05
Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives
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RFG30P05,
RFP30P05,
RF1S30P05SM
TA09834.
F1S30P05
RFP30P05
RF1S30P05SM
RF1S30P05SM9A
RFG30P05
TB334
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F1S30P06
Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
Text: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM
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RFG30
RFP30P
RF1S30
P06SM)
O220AB,
O262AA,
O263AB)
RFG30P06,
RFP30P06,
F1S30P06
RF1S30P06
RF1S30P06SM
RFG30P06
RFP30P06
TB334
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F1S30P06
Abstract: RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3
Text: RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 60V rDS ON = 0.065Ω Temperature Compensating PSPICE Model
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RFG30P06,
RFP30P06,
RF1S30P06,
RF1S30P06SM
O-247
175oC
F1S30P06
RFP30P06
RF1S30P06
RF1S30P06SM
RF1S30P06SM9A
RFG30P06
299E-3
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RFP30P06
Abstract: R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334
Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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RFG30P06,
RFP30P06,
RF1S30P06SM
TA09834.
O-247
O-220AB
O-263AB
175oC
RFP30P06
R*P30P06
F1S30P06
RF1S30P06SM
RF1S30P06SM9A
RFG30P06
TB334
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RFP30P06
Abstract: No abstract text available
Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet Title FG3 06, P30 6, 1S3 06S bt A, V, 65 m, anwer OSTs utho eyrds ter- July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFG30P06,
RFP30P06,
RF1S30P06SM
TA09834.
RFP30P06
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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f1s30p05
Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model
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RFG30P05,
RFP30P05,
RF1S30P05,
RF1S30P05SM
O-247
175oC
f1s30p05
RS223
RFP30P05
TA09834
RF1S30P05
RF1S30P05SM
RFG30P05
rfp30p05 harris
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RFP30P
Abstract: No abstract text available
Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs [ /Title RFG3 0P05, RFP30 P05, RF1S3 0P05S M /Subject (30A, 50V, 0.065 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power
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RFG30P05,
RFP30P05,
RF1S30P05SM
RFP30
0P05S
O220AB
RFP30P
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Untitled
Abstract: No abstract text available
Text: P *3 3 S RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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OCR Scan
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RFG30P06,
RFP30P06,
RF1S30P06,
RF1S30P06SM
0-065i2
81e-8)
23e-1
97e-3
37e-5)
78e-9
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F1S30P05
Abstract: No abstract text available
Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model
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RFG30P05,
RFP30P05,
RF1S30P05,
RF1S30P05SM
0651J
RF1S30P05SM
F1S30P05
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Untitled
Abstract: No abstract text available
Text: P *3 3 S RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits, gives optimum
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OCR Scan
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PDF
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RFG30P05,
RFP30P05,
RF1S30P05,
RF1S30P05SM
0-065i2
Operati85e-9
81e-8)
23e-1
97e-3
37e-5)
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F1S30P06
Abstract: 30p06
Text: RFG30P06, RFP30P06, r f 1 S30P06, RF1S30P06SM HARRIS S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features Packages JEDEC STYLE TO-247 • 3 0A , 60V • rDS ON = 0-06512 • T e m p e ra tu re C o m p e n s atin g P S P IC E M odel
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OCR Scan
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RFG30P06,
RFP30P06,
S30P06,
RF1S30P06SM
O-247
P06SM
81e-8)
23e-1
97e-3
37e-5)
F1S30P06
30p06
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Untitled
Abstract: No abstract text available
Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives
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OCR Scan
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PDF
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RFG30P05,
RFP30P05,
RF1S30P05SM
TA09834.
RFG30P0S,
RF1S30P05SM
AN7260.
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