TSM55N03CP Search Results

Contextual Info: TSM55N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 6 @ VGS = 10V 30 9 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

TSM55N03

Abstract: TSM55N03CP 25V 55A to-252
Contextual Info: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 55A RDS on , Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Pin assignment: 1. Gate 2. Drain 3. Source Features — — — — High Density Cell Design for Ultra Low On-Resistance —

Contextual Info: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V Pin assignment: 1. Gate 2. Drain 3. Source ID = 55A RDS on , Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Features  Advanced trench process technology Fully Characterized Avalanche Voltage and Current