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    2SK1938 Search Results

    2SK1938 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1938 Fuji Electric Power MOSFET Scan PDF
    2SK1938-01 Unknown Scan PDF
    2SK1938-01R Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK1938-01R Fuji Electric Power MOSFET Scan PDF

    2SK1938 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1938

    Abstract: No abstract text available
    Text: 2SK1938-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications 5.45 ±0.2 5.45 ±0.2 Switching regulators UPS DC-DC converters General purpose power amplifier ±0.3 3.2 +0.3 ±0.3


    Original     		PDF 2SK1938-01R 2SK1938

    2SK1938

    Abstract: 2SK1938-01 2SK1938-01R mosfet 55 nf 06
    Text: 2SK1938-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications 5.45 ±0.2 5.45 ±0.2 Switching regulators UPS DC-DC converters General purpose power amplifier ±0.3 3.2 +0.3 ±0.3


    Original     		PDF 2SK1938-01R 2SK1938 2SK1938-01 2SK1938-01R mosfet 55 nf 06

    2SK2774

    Abstract: 2SK1941-01R 2SK2774-01MR 2SK1936-01
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type ＊2 VGS th Typ. Volts パッケージ Package


    Original     		PDF 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2SK1941-01R 2SK1936-01

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original     		PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018

    2SK2774

    Abstract: 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01


    Original     		PDF 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR

    fa5515

    Abstract: FA5510 400v 220uf d3sba60 29 FA5510N diode zd201 CIRCUIT D3SBA60 2SK1938 FA5515N FA5311
    Text: FA551X series CMOS IC For Switching Power SupplyFA551X Control FA5510P N , FA5511P (N) FA5514P (N), FA5515P (N) • Dimensions, mm SOP-8 5 8 3.9 The FA551X series are the PWM type switching power supply control ICs that can directly drive power MOSFET. These ICs


    Original     		PDF FA551X FA551X FA5510P FA5511P FA5514P FA5515P ERA91-02 FA5515 2SK2101 fa5515 FA5510 400v 220uf d3sba60 29 FA5510N diode zd201 CIRCUIT D3SBA60 2SK1938 FA5515N FA5311

    2SK2645

    Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
    Text: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)


    Original     		PDF Feb-00 O-220AB 2SK1007 2SK2523 O-220F15 2SK2469 2SK1006 2SK2470 2SK2524 2SK2471 2SK2645 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan     		PDF T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01


    OCR Scan     		PDF 2SK2518-01MR 2SK2250-01L 2SK22S1-01 2SK2292-01L 2SK2099-01 2SK2253-01MR 2SK22S2-01L 2SK22S5-01MR 2SK2254-01L 2SK2256-01

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Cha racteristics (M ax.1 ton (ns) toff (ns) ciss(pf) Coss(pf) 20 200 2700 480 115 190 TO-220F15 2 10 2.00 380 80 250 70 105 K-PACK L,S 2.00


    OCR Scan     		PDF O-220F15 O-220 O-22QF15 T6-226F15------------- 2SK2082-01 2SK2771-01R 2SK2004-01 2SK1986-01

    2SK1937

    Abstract: No abstract text available
    Text: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass


    OCR Scan     		PDF 2SK2518-01MR 2SK2918-01MR 2SK2251-01 T0-220F15 O-220AB O-220F15 2SK1937

    003A

    Abstract: 2SK1938-01 2SK1938-01R 2SK1938
    Text: SPECI F1CAT 1ON DEVICE NAME : P o w e r TYPE NAME : 2 S K 1 SPEC. No. : M O S F E T 9 3 8 — 0 1R F u j i E l e c t r i c Co.Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED N AM E APPROVED Fuji Electric C a¿ id i a Y 0257“R“004a


    OCR Scan     		PDF 0257-R-004a 2SK1938-01 0257-R-003a 025T-R-003a 003A 2SK1938-01 2SK1938-01R 2SK1938

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan     		PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R

    2sk2255-01mr

    Abstract: 2SK2082 2SK194 2SK1941-01R
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S


    OCR Scan     		PDF 2SK2518-01MR 2SK2250-01L 2SK2251-01 2SK2292-01L 2SK2099-01 2SK2253-01 2SK2252-01L 2SK2255-01 2SK2254-01 2SK2256-01 2sk2255-01mr 2SK2082 2SK194 2SK1941-01R

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan     		PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R

    TO-220F15

    Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
    Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S


    OCR Scan     		PDF 2SK2518-01MR O-220F15 2SK2250-01L 2SK22S1-01 O-220 2SK2292-01L 2SK2099-01 2SK2253-01MR T0220F15 2SK2252-01L TO-220F15 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01

    18VT

    Abstract: 003A 2SK1938 2SK1938-01 2SK1938-01R
    Text: SPECI F1CAT 1ON DEVICE NAME : P o w e r TYPE NAME : 2 S K 1 SPEC. No. : M O S F E T 9 3 8 — 0 1R F u j i E l e c t r i c Co.Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED N AM E APPROVED Fuji Electric C a¿ id i a Y 0257“R“004a


    OCR Scan     		PDF 0257-R-004a 2SK1938-01 0257-R-003a 025T-R-003a 18VT 003A 2SK1938 2SK1938-01 2SK1938-01R