2SJ421 Search Results

2SJ421 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SJ421		Sanyo Semiconductor	Ultrahigh-speed switching		Original	PDF
2SJ421		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
2SJ421		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2SJ421		Sanyo Semiconductor	Ultra High Speed Switching MOSFET		Scan	PDF

2SJ421 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2sj4215 Abstract: s4558 2SJ421 4558M EN5077 Text: Ordering number:EN5077 P-Channel Silicon MOSFET 2SJ421 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [2SJ421] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0	Original	PDF	EN5077 2SJ421 2SJ421] 2sj4215 s4558 2SJ421 4558M EN5077
2SJ421 Abstract: ITR00546 ITR00547 ITR00548 ITR00549 ITR00550 ITR00551 Text: 注文コード No. N 5 0 7 7 2SJ421 No. 5 0 7 7 52599 2SJ421 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用・低オン抵抗。・超高速スイッチング。・4V 駆動。絶対最大定格 Absolute Maximum Ratings / Ta=25℃	Original	PDF	2SJ421 1000mm2 1000mm2 ITR00553 ITR00552 ITR00555 ITR00556 2SJ421 ITR00546 ITR00547 ITR00548 ITR00549 ITR00550 ITR00551
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Untitled Abstract: No abstract text available Text: Ordering number:EN5077 P-Channel Silicon MOSFET 2SJ421 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [2SJ421] 5 4 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain	Original	PDF	EN5077 2SJ421 2SJ421]
2sk3436 Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis	Original	PDF	TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
2sk3436 Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品保守品・廃止品に関するお知らせいつも半導体製品をご使用いただきまして誠にありがとうございます。このたび、下記三洋半導体製品を保守品または廃止品と致します。	Original	PDF	40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
EN5077 Abstract: 2SJ421 3tf5 TA-51 Text: Ordering number :E N 5077 2SJ421 No.5077 P-C hannel Silicon MOSFET Very High-Speed Switching Applications F e a tu re s •Low ON resistance. • Very high-speed switching. • 4V drive. A b s o lu te M axim um R a tin g s a tT a = 25°C Drain-to-Source Voltage	OCR Scan	PDF	EN5077 2SJ421 3tf5 TA-51
2SJ469 Abstract: No abstract text available Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5	OCR Scan	PDF	2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469
2SJ437 Abstract: 2SK244 Text: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA	OCR Scan	PDF	SB20W03P SB40W03T SBA100-04ZP SBA160-Q4ZP SBA50-04Y SBA10Q-04Y SBA160-04Y characteristicsSJ466 2SJ437 2SJ257 2SK244
FW201 Abstract: 2SJ469 Text: il- i •'iti i -•» ■ Overview ^R H p r Currently, portable information equipment such as notebook computers, video cam eras and portable telephones are rapidly o e c e r ig more compact and lightweight. In particular, iarge-capacity, high-performance battery-pack supplies nave become essential. S A N Y O -;as	OCR Scan	PDF	2SK2557 FW103 FW201 FW202 FW203 40/58T 115/165T 1000mm2 2SJ419 2SJ468 2SJ469
2SK2437 Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process	OCR Scan	PDF	MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
2SJ468 Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336 Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) \|Yfi\|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8	OCR Scan	PDF	2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ468 2SJ271 2SJ281 2SJ336
2SK2153 Abstract: 2SJ332S Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^	OCR Scan	PDF	2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S