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    2SD90 Datasheets (104)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD90 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD90 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD90 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD90 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD90 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD90 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD90 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD90 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD90 Unknown Cross Reference Datasheet Scan PDF
    2SD90 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD90 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD90 Sanken Electric Transistor For General Purpose Scan PDF
    2SD900 Various Russian Datasheets Transistor Original PDF
    2SD900 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD900 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD900 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD900 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD900 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD900 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD900 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SD90 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sd907

    Abstract: No abstract text available
    Text: 2SD907(保守用) FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE NPN三重拡散プレーナ形 外形寸法 : Outline Drawings 外形寸法: TO-3P 特長 :Features 特長: h FE のリニアティ が良い リニアティが良い が良い Excellent linearity hFE


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    2SD907 2SB777 2SB777) SC-65 2sd907 PDF

    2SB777

    Abstract: SC-65 2SD907 W8080 2A 80v complementary transistor
    Text: 2SD907(保守用) FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE NPN三重拡散プレーナ形 外形寸法 : Outline Drawings 外形寸法: TO-3P 特長 :Features 特長: h FE のリニアティ が良い リニアティが良い が良い Excellent linearity hFE


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    2SD907 2SB777 2SB777) SC-65 2SB777 SC-65 2SD907 W8080 2A 80v complementary transistor PDF

    2SD904

    Abstract: tv ic equivalent TV horizontal ic voltage
    Text: SANYO SEMICONDUCTOR 2SD904 NPN Triple Diffused Mesa For Horizontal Deflection With Damper Diode Silicon Transistor of 20" Color TV Absolute Maximum Eatings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current


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    2SD904 Tc-25Â -4CWKL50 200mA 100mA 2SD904 tv ic equivalent TV horizontal ic voltage PDF

    2SD91

    Abstract: 2Sd92 2SD90 2SD93 2SD94 2SD943 TI 25
    Text: 2SD90, 2SD91, 2SD92, 2SD93, 2SD94 Oafi&Üffl O Î t Æ Ü Î f X Ü f f l n ap « H B Î i i # f ô : mm E I A J (T C -9 , T B -1 2 ) • (Ta = 25°C) « 3 U 7 H ? • 3 U 7 ? le XÜŒ • X ; / ^Ü EE i -y 7 * ^ — Z-Wl±. X 3 ^ 71t8Ê 2SD 90 2SD91 2SD 92 2SD 93 2SD 94


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    2SD90, 2SD91, 2SD92, 2SD93, 2SD94 2SD90 2SD91 2SD92 2SD93 2SD94 2SD943 TI 25 PDF

    2SD945

    Abstract: 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 25W 2SD901 200 5 2A 150 100 10 400 (Tc=25ºC) 80W 2SD902 350


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    2SD901 2SD902 2SD903 2SD904 2SD905 2SD906 2SD907 2SD908 2SD909 2SD910 2SD945 2SD988 2SD924 2SD977 2SD972 2SD984 2SD988 equivalent 2SD925 2SD996 2SD902 PDF

    2SD903

    Abstract: C580A VC80
    Text: 2SD903 N P N Triple Diffused Mesa Type Silicon Transistor •V For H orizontal O u tp u t Use o f Color T V Includes a D a m p e r Diode * 7 — r U t :'7 K ¥ ( ^ » \— t — Kf*3 C58 A b so lu te Maximum 3 U ? 9 ' '*<•— * tgj± ZI U 9 9 • X £ "/


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    2SD903 C580A 200nA 35RIH 2SD903 C580A VC80 PDF

    V836

    Abstract: 2SD905 1400v npn
    Text: SavantIC Semiconductor Product Specification 2SD905 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage power switching TV horizontal deflection output applications PINNING see Fig.2 PIN


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    2SD905 V836 2SD905 1400v npn PDF

    2SD907

    Abstract: 20MS 2SB777 SC-65 091-C
    Text: 2SD907 «-»* TR IP LE D IFF U S E D PLANER TY P E N P N = w . m 7°i'- i- m • 4M : F e a tu r e s • hpE^'j— &\ , ' • Excellent linearity hFE High collector current • A SO ^ '/ a L ' • H flif ltt Excellent safe operating area High reliability


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    2SD907( 2SB777i 2SB777) SC-65 100/i 2SD907 20MS 2SB777 SC-65 091-C PDF

    9l 15a

    Abstract: 2SD905 40N20 cp 68a
    Text: 2SD905 ->>J =1> NPN = Ä J£tfcB SILICO N NPN T R IP L E D IFFUSED is w i± n t> z -f HIGH VOLTAGE PO W ER SW ITCHING TV HORIZONTAL DEFLECTION OUTPUT TVTkVffiililtH^ffl 11.35max. 11.6 ±0.5 ^3.3max. 3.0typ. 1. — X ; Base 2 . J- I / 9 \ E m itter 3 . 3 V 9 9 : C ollector


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    35max. 2SD905 9l 15a 40N20 cp 68a PDF

    2SD905

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SD905 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage power switching TV horizontal deflection output applications PINNING see Fig.2 PIN


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    2SD905 2SD905 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2sb405

    Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100


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    2SD11 2SD12 2SD13 2SD14 2SD15 2SD16 2SD17 2SD18 2SD19 2SD20 2sb405 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92 PDF

    2SD915

    Abstract: 2SD877 2SD889 2SD870 2SD878 2SD873 2SD866 2SD866A 2SD867 2SD868
    Text: - 228 - m n Ta=25cC, *EP(ÏTc=25‘ C 32 2SD866 & ír £ föT ffl & PSW VcBO VcEO ICCDC) Pc Pc* (V) (V) (A) (W) (W) 130 80 7 i.CBO. (max) (/¿A) 40 . HF VcB (V) 10 100 (min) 60 M (max) 260 te Vc e (V) (Ta=25*C) (max) (V) Ic / I e (A) 2 [*EPfätyp<S] (V)


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    2SD866 2SD866A 2SD867 2SD868 2SD869 2SD870 2SD871 2SD886A T0-220F 2SD888 2SD915 2SD877 2SD889 2SD870 2SD878 2SD873 2SD867 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent PDF

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 PDF

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 PDF

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 PDF