2SA1123 TRANSISTOR Search Results

2SA1123

Abstract: 2SC2361 TO-220C
Contextual Info: SavantIC Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1

2SC2361

Abstract: 2sa1123
Contextual Info: Inchange Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION

2SC2631

Abstract: 2SA1123
Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.

2SA1123

Abstract: 2SC2631 2sa1123 transistor
Contextual Info: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.

2SA1123

Abstract: 2SC2631 SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.1±0.2 0.7±0.2 • Satisfactory linearity of forward current transfer ratio hFE

2SA1123

Abstract: 2SC2631 SC-43A 2sa112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.1±0.2 0.7±0.2 • Satisfactory linearity of forward current transfer ratio hFE

2SA1123

Abstract: 2SC2631 2sa1123 transistor
Contextual Info: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.

2SA1123

Abstract: 2SC2631
Contextual Info: Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.0±0.2 ● 0.7±0.1 12.9±0.5 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/

2SA1123

Abstract: 2SC2631
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC

2SA1123

Abstract: 2SC2631
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC

2SA114

Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF

2SA1123

Abstract: 2SC2631 SC-43A
Contextual Info: Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE • High collector-emitter voltage Base open VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE

2sc2631

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE

2SA1123

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC

2SD2529

Abstract: 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601
Contextual Info: ; •Silicon Small Signal Transistors / ! ; # General-use Low Frequency Amplifiers and Others I 2SB1462 12SD2216 1 2SA1791 General­ is e low freq. ampli­ fier 12SC4656 f 2SB1218A 12SD1819A 2SB1219/A I 2SD1820/A i 2SB709A I 2SD601A 1 2SB710/A I 2SD602/A

2SB1446

Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
Contextual Info: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin