2SA1123
Abstract: 2SC2631
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC
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2SA1123
2SC2631
2SC2631,
2SA1123
2SC2631
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2SA1123
Abstract: 2SC2631
Text: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.
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2SA1123
2SC2631
2SC2631,
2SA1123
2SC2631
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2SA1123
Abstract: 2SC2631
Text: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.0±0.2 ● 0.7±0.1 12.9±0.5 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.
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2SC2631
2SA1123
2SA1123
2SC2631
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2SA1123
Abstract: 2SC2631
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC
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2002/95/EC)
2SA1123
2SC2631
2SC2631,
2SA1123
2SC2631
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2SA1123
Abstract: 2SC2631 SC-43A
Text: Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE • High collector-emitter voltage Base open VCEO
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2SC2631
2SA1123
2SA1123
2SC2631
SC-43A
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2SA1123
Abstract: 2SC2631 2sa1123 transistor
Text: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.
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2SA1123
2SC2631
2SC2631,
2SA1123
2SC2631
2sa1123 transistor
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/
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2002/95/EC)
2SA1123
2SC2631
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2SC2631
Abstract: 2SA1123
Text: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.
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2SC2631
2SA1123
100MHz
2SC2631
2SA1123
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2SA1123
Abstract: 2SC2631 SC-43A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.1±0.2 0.7±0.2 • Satisfactory linearity of forward current transfer ratio hFE
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2002/95/EC)
2SC2631
2SA1123
2SA1123
2SC2631
SC-43A
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2SA1123
Abstract: 2SC2631 SC-43A 2sa112
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.1±0.2 0.7±0.2 • Satisfactory linearity of forward current transfer ratio hFE
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2002/95/EC)
2SC2631
2SA1123
2SA1123
2SC2631
SC-43A
2sa112
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC
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2002/95/EC)
2SA1123
2SC2631
2SC2631,
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2sc2631
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE
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2002/95/EC)
2SC2631
2SA1123
2sc2631
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2SA1123
Abstract: 2SC2631 2sa1123 transistor
Text: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.
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2SA1123
2SC2631
2SC2631,
2SA1123
2SC2631
2sa1123 transistor
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 0.7±0.1 12.9±0.5 d p lan inc ea se ed lud p lan m m es
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2SC2631
2SA1123
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE
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2002/95/EC)
2SC2631
2SA1123
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2SA1123
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC
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2002/95/EC)
2SA1123
2SC2631
2SC2631,
2SA1123
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2SA1123
Abstract: 2SC2631
Text: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.
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2SC2631
2SA1123
2SA1123
2SC2631
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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C2482
Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Text: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC
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2SD1085
2SC3468
2SC2551
2SC3415
2SD1069
2SD772
2SC1570
2SC941TM
2SC458
2SC3311A
C2482
C3468
2SC2663
2SC3208
c2981
C2787
M 3211
2sc1510
C1573
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2sC2335
Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Text: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI
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2SC3040
2SC2555
2SC3365
2SC3277
2SC2650
2SC2740
2SC2792
2SC3151
2SC3153
2SC3783
2sC2335
2sc1009
2SC2534
TOSHIBA 2803
2sc2805
2SC1817A
2sc2555
2SC3151
2SC2895
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2SC1571
Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi 2SC3609 2SC4082 2SC4161 K 4087 2SC4246
Text: tt SS! £ T y p e No. € Manuf. ft H SANYO 3R *£ TOSHIBA m b NEC Ä ± àfi FUJITSU fâ T M ATSUS H I T A Z £ MITSUBISHI □ — A ROHM 2SC4082 2SC4259 2SC 4068 tö 2SC 4069 h UN2217 DTCÎ 2 4 G K h UN4217 DTC124GS 2SC 4070 2SC 4071 2SC 4073 n ft =- ft
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2SC44Q6
2SC4246
2SC4183
2SC4259
2SC4082
UN2217
DTC124GK
UN4217
DTC124GS
UN5531
2SC1571
2sc3828
4088B
2SC3904
4082 mitsubishi
2SC3609
2SC4082
2SC4161
K 4087
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2SC263A
Abstract: 2sc2078 2SC2320 2SC763 2SC2989 2SC3393 2SC3360 2sc2238 2SC710 2SC1663
Text: - 120 - M £ Type No. 2SC 1650 a— h 2SC 1651 ^ 2SC 1652 a— U □— A 2SC 2SC 2SC 2SC 1653 ^ 1654 1655 16 5 5A a a s a a « 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1656 1657 1658 * 1659 1660 1661 1662 1663 4 1664 2SC 1665 2SC 1667 2SC 1668 2SC 2SC 2SC 2SC
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2SC2909
2SC263Ã
2SC4218
2SC263A
2SC3393
2SC1317
2SC3143
2SC3138
2SD814
2SC3722K
2SC263A
2sc2078
2SC2320
2SC763
2SC2989
2SC3393
2SC3360
2sc2238
2SC710
2SC1663
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