2SB788 Search Results

Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) (1.0) (1.5) Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V VEBO

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit

2SA114

Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF

Contextual Info: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planar type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO.

2SD958

Abstract: 2SB788
Contextual Info: Transistor 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB788 Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB788

Abstract: 2SD958
Contextual Info: Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD958 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) 4.1±0.2 2.0±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 • Features • High collector-emitter voltage (Base open) VCEO

Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter Symbol

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

2SD921

Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
Contextual Info: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H