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    KYOCERA Corporation CX5032SB16000D0PPTZZ

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    ComSIT USA CX5032SB16000D0PPTZZ 5,000
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    KYOCERA Corporation CX5032SB16000D0DPJ01

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    ComSIT USA CX5032SB16000D0DPJ01 1,000
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    Kyocera AVX Components CX5032SB16000F0FLJZ1

    SMD CRYSTAL (Alt: CX5032SB16000F0FLJZ1)
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    Avnet Abacus CX5032SB16000F0FLJZ1 17 Weeks 3,000
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    2SB160 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB160 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB160 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB160 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB160 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB160 Unknown Vintage Transistor Datasheets Scan PDF
    2SB160 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB160 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1600 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1601 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1602 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1602 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1602 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF
    2SB1602 Toshiba TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SB1602 Toshiba PNP transistor Scan PDF
    2SB1603 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1603 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1603 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1603 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB1603A Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1603A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SB160 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1607

    Abstract: 2SD2469
    Text: Inchange Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Complement to type 2SD2469 APPLICATIONS ・For power switching applications


    Original     		2SB1607 O-220F 2SD2469 O-220F) 10MHz 2SB1607 2SD2469 PDF

    2SB1606

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Good linearity of hFE APPLICATIONS ·For power switching applications PINNING


    Original     		2SB1606 O-220F O-220F) 10MHz 2SB1606 PDF

    2SB1603

    Abstract: 2SB1603A
    Text: SavantIC Semiconductor Product Specification 2SB1603 2SB1603A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION


    Original     		2SB1603 2SB1603A O-220F O-220F) 2SB1603 2SB1603A PDF

    2SB1604

    Abstract: 2SB1604A
    Text: SavantIC Semiconductor Product Specification 2SB1604 2SB1604A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION


    Original     		2SB1604 2SB1604A O-220F O-220F) 2SB1604 2SB1604A PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SD2462 2SB1602 PDF

    2SB1602

    Abstract: 2SD2462
    Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602


    OCR Scan     		2SD2462 2SB1602 2SD2462 PDF

    220E

    Abstract: 2SB1607 2SD2469
    Text: Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original     		2SB1607 2SD2469 220E 2SB1607 2SD2469 PDF

    220E

    Abstract: 2SB1605 2SB1605A
    Text: Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification • Features Parameter Collector to base voltage 2SB1605A Collector to 2SB1605 Ratings –60 VCBO –80 –60 VCEO emitter voltage 2SB1605A –80 Unit


    Original     		2SB1605, 2SB1605A 2SB1605 220E 2SB1605 2SB1605A PDF

    220E

    Abstract: 2SB1606
    Text: Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage


    Original     		2SB1606 120mA 220E 2SB1606 PDF

    D2462

    Abstract: 2SB1602 2SD2462
    Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) · Complementary to 2SB1602


    Original     		2SD2462 2SB1602 D2462 2SB1602 2SD2462 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1602 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER PO W ER AM PLIFIER APPLICATIO NS • • U n it in mm High DC Current Gain : hFE = 300-1000 (V c e = - 5 V , I c = -0 .5 A ) Low Collector Saturation Voltage. : v C E(sat)= —0.4V (Typ.) ( Iq = —1A, lB = -1 0 m A )


    OCR Scan     		2SB1602 --60V, --10mA --10V, PDF

    PNP 100V 2A

    Abstract: 2SB1606
    Text: Inchange Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Good linearity of hFE APPLICATIONS ・For power switching applications


    Original     		2SB1606 O-220F O-220F) 10MHz PNP 100V 2A 2SB1606 PDF

    2SB1602

    Abstract: 2SD2462
    Text: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : ^FE 1 = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SD2462 2SB1602 2SD2462 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original     		2SB1606 PDF

    d2462

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602 •


    OCR Scan     		2SD2462 2SB1602 d2462 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; hjrg i = 300~ 1000 Low Collector Saturation Voltage : v CE(sat)= -0.5V (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SB1602 2SD2462 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features 4.6±0.2 Low collector to emitter saturation voltage VCE sat High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw


    Original     		2SB1604, 2SB1604A 2SB1604 2SB1604A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original     		2SB1607 2SD2469 PDF

    2SB1602

    Abstract: 2SD2462
    Text: TOSHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain : ^FE 1 = 300~1000 Low Collector Saturation Voltage : VCE (sat)“ —0.5y (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SB1602 2SD2462 100ms 2SB1602 PDF

    220E

    Abstract: 2SB1603 2SB1603A
    Text: Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SB1603 base voltage 2SB1603A Collector to 2SB1603 Ratings –40 VCBO –50 –20


    Original     		2SB1603, 2SB1603A 2SB1603 220E 2SB1603 2SB1603A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1602 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 6 Q2 High DC Current Gain : ^FE 1 = 300—1000 Low Collector Saturation Voltage • VCE (sat)= —0-5V (Typ.) Complementary to 2SD2462 • •


    OCR Scan     		2SB1602 2SD2462 PDF

    2SD2469

    Abstract: 2SB1607
    Text: SavantIC Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications


    Original     		2SB1607 O-220F 2SD2469 O-220F) -15ter 10MHz 2SD2469 2SB1607 PDF

    2SB1605

    Abstract: 2SB1605A
    Text: SavantIC Semiconductor Product Specification 2SB1605 2SB1605A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION


    Original     		2SB1605 2SB1605A O-220F O-220F) 2SB1605 Collec-30V; 2SB1605A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm • Features 4.6±0.2 Low collector to emitter saturation voltage VCE sat High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw


    Original     		2SB1603, 2SB1603A 2SB1603 2SB1603A PDF