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    D2462 Search Results

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    D2462 Price and Stock

    KOA Speer Electronics Inc RN73R1JTTD2462B25

    RES 24.6K OHM 0.1% 1/10W 0603
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    DigiKey () RN73R1JTTD2462B25 Digi-Reel 4,000 1
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    RN73R1JTTD2462B25 Cut Tape 4,000 1
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    TTI RN73R1JTTD2462B25 Reel 5,000
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    KOA Speer Electronics Inc RN731JTTD2462F25

    RES 24.6K OHM 1% 1/16W 0603
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    KOA Speer Electronics Inc RN732BTTD2462A05

    RES 24.6K OHM 0.05% 1/8W 1206
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    KOA Speer Electronics Inc RN73R2ATTD2462A25

    RES 24.6K OHM 0.05% 1/8W 0805
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    DigiKey () RN73R2ATTD2462A25 Digi-Reel 1
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    RN73R2ATTD2462A25 Cut Tape 1
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    RN73R2ATTD2462A25 Reel 5,000
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    KOA Speer Electronics Inc RN73R1JTTD2462A10

    RES 24.6K OHM 0.05% 1/10W 0603
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    DigiKey () RN73R1JTTD2462A10 Cut Tape 1
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    RN73R1JTTD2462A10 Digi-Reel 1
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    RN73R1JTTD2462A10 Reel 5,000
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    D2462 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D2462

    Abstract: 2SB1602 2SD2462
    Contextual Info: D2462 東芝トランジスタ シリコンNPN三重拡散形 D2462 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.2 A) 飽和電圧が低い。 : VCE (sat) = 0.4 V (標準) (IC = 1 A, IB = 10 mA)


    Original     		2SD2462 2SB1602 20070701-JA D2462 2SB1602 2SD2462 PDF

    D2462

    Abstract: 2SB1602 2SD2462
    Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) · Complementary to 2SB1602


    Original     		2SD2462 2SB1602 D2462 2SB1602 2SD2462 PDF

    d2462

    Abstract: 2SD2462 2SB1602
    Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •


    Original     		2SD2462 2SB1602 d2462 2SD2462 2SB1602 PDF

    D2462

    Abstract: 2SD2462 2SB1602
    Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •


    Original     		2SD2462 2SB1602 D2462 2SD2462 2SB1602 PDF

    4BE67

    Abstract: C356D E5 0D E7834
    Contextual Info: 123456789 ABC9ADEDF9B9CED9 D9DF9B9AD FD9 1 A 23435671839A5BCDBE41 36D5391 "04A!1 %2AD4D92A4346A,84D84A5673DF4.A 2A75A904A.D482A567E4.D84A5746A646D64FA97A DC54C489A 2A E7C52E9A 42.7A 97A .4A 0D40A 62D97A 64346A .79D78A 29A 28A 4+964C47A


    Original     		23435671839A5BCDBE41 D4D92 84D84A5673DF4 A75A904A A567E4. D84A57 46A646 D64FA97A 4C489A E7C52E9 4BE67 C356D E5 0D E7834 PDF

    D2462

    Abstract: 2SB1602 2SD2462
    Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •


    Original     		2SD2462 2SB1602 D2462 2SB1602 2SD2462 PDF

    d2462

    Contextual Info: D2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type D2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •


    Original     		2SD2462 2SB1602 d2462 PDF