2N930 NPN TRANSISTOR FREE Search Results

4501 ic

Abstract: 2N930
Contextual Info: N AMER PHILIPS/DISCRETE b'ïE D • bbSaTBl □G2fiDb2 4=17 ■ APX 2N930 A N-P-N SILICON PLANAR TRANSISTOR N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. These devices are prim arily intended fo r use in high performance, low-level, low-noise am plifier appli­

transistor 2n930

Contextual Info: 2N930 PHILIPS INTERNATIONAL T V SbE D ' 2 f ~ 711Gfl5b DDMESbE GST 17 • PHIN N-P-N SILICON PLANAR TRANSISTOR N-P-N transistors in TO -18 metal envelopes with the collector connected to the case. These devices are primarily intended for use in high performance, low-level, low-noise amplifier appli­

2N930 NPN transistor FREE

Abstract: 2n930
Contextual Info: 2N930 1 * 2 * - PHILIPS INTERNATIONAL 5LE D n _j L 7110flSb DDM25ti2 GST M P H I N N -P-N SILICON PLANAR TRANSISTOR N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. These devices are prim arily intended fo r use in high performance, low-level, low-noise amplifier appli­

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53T31 0Q2fl0b2 4^7 2N930 IAPX N -P-N SILICON PLANAR TRANSISTOR N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These devices are primarily intended for use in high performance, low-level, low-noise amplifier appli­

2N930

Abstract: 253K mil-prf-19500/376
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 4 May 2010. MIL-PRF-19500/253K w/AMENDMENT 1 4 February 2010 SUPERSEDING MIL-PRF-19500/253K 3 July 2008 PERFORMANCE SPECIFICATION SHEET

2N930

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 June 2002. INCH-POUND MIL-PRF-19500/253H 25 March 2002 SUPERSEDING MIL-PRF-19500/253G 23 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

2N3680 transistor

Abstract: 2N2642 TE550 2N2920
Contextual Info: TYPE 2N3680 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 7 2 1 1 6 8 7 , M A R C H 1 97 2 RECOMMENDED FOR D IFFER EN TIA L AMPLIFIERS • Featuring Matching and Tracking Improvements over 2N2453, 2N2642, and 2N2920 • Each Triode Electrically Similar to 2N2484 and 2N930

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

transistor marking wt

Abstract: motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN MPS6521* PNP MPS6523 2 BASE 1 EMITTER COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Transistor 2N2905A

Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MPS751 equivalent

Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS

BC238 h parameter

Abstract: 2n6515 REPLACEMENT BC237 2N6515 equivalent transistor bc547 BC109c transistor BC161 transistor BF245 motorola 2N2270 2n6517 sot
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN 2N6515 2N6517 PNP 2N6519 2N6520 COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector – Emitter Voltage VCEO

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

mps6652 equivalent

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPS6601 MPS6602* PNP MPS6651 MPS6652* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

MPS8599 equivalent

Abstract: bf245 equivalent MPS8099 equivalent BC237 BDB02D transistor bc107b equivalent J300 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPS8098 MPS8099* PNP MPS8598 MPS8599* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER MAXIMUM RATINGS Symbol MPS8098 MPS8598 MPS8099 MPS8599 Unit Collector – Emitter Voltage

MPSa56 equivalent

Abstract: MPSa05 equivalent MPSa06 equivalent BC237 bc547 npn Mpsa92/MPSa56 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 MPSA06