1E14
Abstract: 2E12 2N7293D 2N7293H 2N7293R FRK250D
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H 2N7293D, 2N7293R 2N7293H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 27A, 200V, RDS(on) = 0.100Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts
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Original
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FRK250
2N7293D,
2N7293R
2N7293H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
2N7293D
2N7293H
2N7293R
FRK250D
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7293D1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)81 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55
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2N7293D1
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Untitled
Abstract: No abstract text available
Text: 2N7293D3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)81 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55
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2N7293D3
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7293D2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)81 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55
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2N7293D2
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7293H4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)27 I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)81 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55
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2N7293H4
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FSL430
Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Text: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080
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O-205AF
O-258AA
FRL230,
JANSR2N7275
FRL234,
JANSR2N7278
FRE160,
2N7300
FRL130,
FSL430
FRL-230
FSS430
FSF9250
JANSR2N7272
JANSR2N7275
JANSR2N7278
JANSR2N7281
2N7306
FRM92
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PDF
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2N7291
Abstract: 2N7295 c 3421 transistor 2N7293 FRK150 frk450
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2004. MIL-PRF-19500/606B 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY
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Original
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MIL-PRF-19500/606B
MIL-PRF-19500/606A
2N7291,
2N7293,
2N7295,
2N7297,
MIL-PRF-19500.
2N7291
2N7295
c 3421 transistor
2N7293
FRK150
frk450
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PDF
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ge cms 160v 190
Abstract: No abstract text available
Text: H A R R 2N7293D, 2N7293R 2N72Q3H ,S S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H December 1992 . R adiation Hardened N -C hannel Pow er M O SFETs Package Features • 27A, 200V, RDS<on)» 0.100Q TO-204AE • Second Generation Rad Hard MOSFET Result* From New Design Concepts
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OCR Scan
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2N7293D,
2N7293R
2N72Q3H
O-204AE
FRK250
100KRAD
300KRAD
1000KRAD
3000KRAD
AN-8831,
ge cms 160v 190
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PDF
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FRK250
Abstract: No abstract text available
Text: H A RR IS S E M I C O N D S E CT OR 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H • 4 3 G2 27 1 G D 4 5 7 3 3 37T H H A S 2N7293D, 2N7293R 2N7293H Radiation Hardened N-Channel Power MOSFETs December 1992
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OCR Scan
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FRK250
2N7293D,
2N7293R
2N7293H
O-204AE
100KRAD
300KRAD
1000KRAD
2N7293R,
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PDF
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Untitled
Abstract: No abstract text available
Text: m a r r is S E M I C O N D U C T O R 2N7293D, 21^ 2N7293R 7293H REGISTRATION PENDING Currently Available as FRK250 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 27A, 200V, RDS(on) = 0.1 OOii TO-2Q4AE
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OCR Scan
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2N7293D,
2N7293R
7293H
FRK250
100KRAD
300KRAD
1000KRAD
3000KRAD
FRF5E50LI3
52PH0TC
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70
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OCR Scan
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43Q2271
126X182
FRM230D
FRM234D
FRM430D
FRL130D
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PDF
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B402-6
Abstract: No abstract text available
Text: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080
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OCR Scan
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O-205AF
O-258AA
FRE160,
2N7300
FRE260,
2N7302
FRE264,
2N7304
FRE460,
2N7306
B402-6
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PDF
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Untitled
Abstract: No abstract text available
Text: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH)
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OCR Scan
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204AA
205AF
257AA
204AE
254AA
258AA
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PDF
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2N7289
Abstract: 2N7308 2N7331
Text: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R
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OCR Scan
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FRM130D
FRM130R
FRM130H
FRM230D
FRM230R
FRM230H
FRM234D
FRM234R
FRM234H
FRM430D
2N7289
2N7308
2N7331
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PDF
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