2N72 Search Results

2n871

Abstract: 2n 719a 2n720
Contextual Info: typ es 2M6SI, tmm. 7.nm. iwimk. 2N720A. 2N870, 2N871, 2MIÌIS -.»ftslBSÖ ¿KS&8.Ì N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V IS E D M A R C H 1973 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N7218

Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Contextual Info: 2N7218, 2N7218, 2N7218 2N7219, 2N7219, 2N7219 2N7221, 2N7221, 2N7221 2N7222, 2N7222, 2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

2N7227

Abstract: SV400
Contextual Info: Tem ic 2N7227JANTX/JANTXV Siliconix N-Channel Enhancement-Mode Transistors Product Summary V D S V r DS(on) (Q ) I d (A) 400 0.415 14 Parametric limits in accordance with M 1I.-S-19500I592 where applicable. TO-254AA H erm etic Package o G 0 - It Case Isolated

2N7224

Abstract: 2N7224U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7224 2N7224U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

2N720A

Contextual Info: 2N720A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N720AJ • JANTX level (2N720AJX)

Contextual Info: AD VA N C E D PO WE R T E C H N O L O G Y blE D • Qg5 7 W QDDQfl3S 747 H A V P WWaa d v a n c ed POW ER Te c h n o l o g y QD 2N7227 400 Volt 2N7227* 2N7227* O S POWER MOS IV 0.315Q 'QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

1E14

Abstract: 2E12 2N7274D 2N7274H 2N7274R
Contextual Info: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: 2N720A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N720AJ • JANTX level (2N720AJX) • JANTXV level (2N720AJV)

Contextual Info: SENSITRON SEMICONDUCTOR 2N7224 TECHNICAL DATA DATA SHEET 161, REV see also data sheet 766 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.07 Ohm MOSFET œ Isolated and Hermetically Sealed œ Simple Drive Requirements œ Repetitive Avalanche Rating

2N720A

Abstract: 2N720A JAN
Contextual Info: 2N720A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

Contextual Info: HARRIS SEIUCOND SECTOR m SfiE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H • 43D2271 GD4Sh72 13T H H A S 2N7271U, 2N7271H 2N7271H . Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 14A, 100V, RDS<on)» 0.180Q

isd 4020

Abstract: 2N7236U IRFN9140
Contextual Info: IRFN9140 2N7236U MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

TO-276

Abstract: IRF250SMD IRFN250 TO276AB
Contextual Info: IRFN250 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

2N727CSM

Contextual Info: 2N727CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: _ A d van ced P o w er Te c h n o l o g y D 8 0.4150 . 2N7228 500 Volt 2N7228* 2N7228* POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N -CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

2N7228

Contextual Info: 2N7228JANTX/JANTXV Siliconix NĆChannel EnhancementĆMode Transistors Product Summary VDS V rDS(on) (W) ID (A) 500 0.515 12 Parametric limits in accordance with MILĆSĆ19500/592 where applicable. TOĆ254AA Hermetic Package D G Case Isolated S D S G NĆChannel MOSFET

2n7225

Contextual Info: 2N7225JANTX/JANTXV Siliconix NĆChannel EnhancementĆMode Transistors Product Summary VDS V rDS(on) (W) ID (A) 200 0.105 27.4 Parametric limits in accordance with MILĆSĆ19500/592 where applicable. TOĆ254AA Hermetic Package D G Case Isolated S D S G NĆChannel MOSFET

Contextual Info: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 2N720A HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications.

Contextual Info: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q

Contextual Info: H A R R IS æ S E M IC O N D SECTO R bSE D • lHARRlS S E M I C O N D U C T O R 4305571 G D M ^O M l 7 3 e! « H A S 2N7277D, 2N7277R 2N7277H REGISTRATION PENDING Currently Available as FRM234 D, R, H . . Radiation Hardened N-Channel Power MOSFETs ju n « 1993

2N7228

Contextual Info: 2N7228 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800)