IRFN9140 Search Results

IRFN9140

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1553 HEXFET POWER MOSFET IRFN9140 N-CHANNEL Ω HEXFET -100 Volt, 0.20Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

isd 4020

Abstract: 2N7236U IRFN9140
Contextual Info: IRFN9140 2N7236U MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: im iFFI mi SEME IRFN9140 LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 -100 V -14A 0.0200 V Dss 0.25 ^D(cont) 3.0 R DS(on) *iC •n*-1- FEATURES T • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: IRFN9140SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

smd 2f

Abstract: IRFN9140
Contextual Info: Provisional Data Sheet No. PD-9.1553A HEXFET POWER MOSFET IRFN9140 P-CHANNEL Ω HEXFET -100 Volt, 0.20Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state

IRFN9140

Abstract: JANTX2N7236U JANTXV2N7236U
Contextual Info: PD - 91553D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International

2N7236U

Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Contextual Info: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

isd 4020

Abstract: 2N7236U IRFN9140
Contextual Info: IRFN9140 2N7236U MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

IRFN9140

Contextual Info: SEME IRFN9140 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 –100V –14A Ω 0.020Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

Contextual Info: PD - 91553E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

Contextual Info: Provisional Data Sheet No. PD-9.1553A International IS R Rectifier HEXFET POWER MOSFET IRFN9140 P-CHANNEL Product Summary -100 Volt, 0.20ÎÎ HEXFET H E X F E T technology is th e key to International Rectifier’s advanced line of power M O SFET transis­

11A3 ST

Abstract: diode 533 18A --/M/MARKING 11A3
Contextual Info: I p j j- 0 f p i Q Ü Q H Q I Provisional Data Sheet No. PD-9.1553 IO R Rectifier HEXFET POWER MOSFET IRFN9140 N-CH A NN EL Product Sum m an 1 -100 Volt, 0.20Q HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­

Contextual Info: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

IRFN9140SMD

Contextual Info: IRFN9140SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

IRFN9140

Abstract: JANS2N7236U JANTX2N7236U JANTXV2N7236U
Contextual Info: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

Contextual Info: Mil W llll : SEME IRFN9140 LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 V DSS 2.0 3.5 -1 0 0 V 0.25 3.5 -1 4 A I D(cont) 3.0 0.020Q ^D S (on) iC FEATURES -1- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

Diode SMD ED 9C

Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Contextual Info: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

n10 smd

Contextual Info: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security