MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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2n7000 motorola
Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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2N7000/D
2N7000
226AA)
2N7000/D
2n7000 motorola
To92 transistor motorola
fet 2n7000
2N7000 MOTOROLA pin out
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2N7000 MOTOROLA
Abstract: 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola"
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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2N7000/D
2N7000
226AA)
2N7000 MOTOROLA
2N7000 Fet
To92 transistor motorola
2N7000 MOTOROLA pin out
2N7000
fet 2n7000
2N7000 "Motorola"
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PDF
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To92 transistor motorola
Abstract: 2N7000 fet 2n7000
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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2N7000/D
2N7000
226AA)
To92 transistor motorola
2N7000
fet 2n7000
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BS170 116
Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
Text: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R
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2N7000
2N7000RLRA
2N7000RLRM
2N7000RLRP
2N7000ZL1
2N7002L
2N7002LT1
2N7002LT3
BS107
BS107A
BS170 116
NTZD3155CT1G
NTD18N06
NID5001
NUD3124LT1G
NTD30N02
NTZD3155CT5G
ntr4503nt1
NTMS4700NR2
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2N7000
Abstract: MBB692
Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor
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2N7000
SC13b
SCA54
137107/00/01/pp12
2N7000
MBB692
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BC237
Abstract: 2N7000 Fet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR
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2N7000
226AA)
f218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2N7000 Fet
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2N700
Abstract: 2n7000 100C 2N7002 CBVK741B019 NDS7002A PN2222N "ON Semiconductor" 2N7002 2N700 mosfet
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
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2N7000
2N7002
NDS7002A
400mA
2N700
100C
CBVK741B019
NDS7002A
PN2222N
"ON Semiconductor" 2N7002
2N700 mosfet
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PDF
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2N7000 021
Abstract: 2N7000 MOSFET D3000 2n7000 Mosfet 2n7000 2n7000 data sheet nds7000 2n7000 equivalent 2n7002-1 2N700
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
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2N7000
2N7002
NDS7002A
400mA
2N7000 021
2N7000 MOSFET
D3000
Mosfet 2n7000
2n7000 data sheet
nds7000
2n7000 equivalent
2n7002-1
2N700
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PDF
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07153
Abstract: 03aa02
Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .
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2N7000
2N7000
03ab40
03ab30
771-2N7000AMO
07153
03aa02
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PDF
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2n7000
Abstract: 100C 2N700 2N7002 CBVK741B019 NDS7002A PN2222N
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
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2N7000
2N7002
NDS7002A
400mA
100C
2N700
CBVK741B019
NDS7002A
PN2222N
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PDF
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2n7000
Abstract: 2N7002 2N700 100C CBVK741B019 NDS7002A PN2222N 2N700 mosfet
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
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2N7000
2N7002
NDS7002A
400mA
2N700
100C
CBVK741B019
NDS7002A
PN2222N
2N700 mosfet
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2N7000 MOSFET PIN DETAILS
Abstract: 2N7000ZL1G 2n7000 mosfet 2n7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP
Text: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc
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2N7000
2N7000/D
2N7000 MOSFET PIN DETAILS
2N7000ZL1G
2n7000
mosfet 2n7000
2N7000G
2N7000RLRA
2N7000RLRAG
2N7000RLRM
2N7000RLRMG
2N7000RLRP
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VQ1000J
Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
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2N7000/7002,
VQ1000J/P,
BS170
2N7000
2N7002
VQ1000P
VQ1000J
Capaci02,
VQ1000J
2n7000
VQ1000J/P
VQ1000P
2N7002
BS170
TO-92-18R
S-52429
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equivalent of BS170
Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P
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2N7000/7002,
VQ1000J/P,
BS170
2N7000
2N7002
VQ1000P
VQ1000J
Capacitan02,
equivalent of BS170
2n7002 siliconix
2n7000 equivalent
EQUIVALENT FOR bs170
MARKING bs170
2n7000 data sheet
VQ1000J
codes marking 2N7002
SILICONIX 2N7002
2N7002 MARKING
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PDF
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2N7000 MOSFET PIN DETAILS
Abstract: No abstract text available
Text: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc
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2N7000
2N7000
2N7000G
2N7000RLRA
2N7000RLRAG
2N7000RLRM
2N7000RLRMG
2N7000RLRP
2N7000 MOSFET PIN DETAILS
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2n7000 equivalent
Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
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2N7000/7002,
VQ1000J/P,
BS170
2N7000
2N7002
VQ1000P
VQ1000J
Capaci02,
2n7000 equivalent
VQ1000J
2n7000
2N7002 MARKING
2n7002 siliconix
EQUIVALENT FOR bs170
equivalent of BS170
BS170
mosfet bs170
VQ1000J/P
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2N7000
Abstract: 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1
Text: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Gate–Source Voltage – Continuous
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2N7000
r14525
2N7000/D
2N7000
2N7000RLRA
2N7000RLRM
2N7000RLRP
2N7000ZL1
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PDF
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2N7000 TO-92
Abstract: No abstract text available
Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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2N7000
2N7000
DSFP-2N7000
A021307
2N7000 TO-92
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MCB700
Abstract: n7000 A 673 C2 transistor 2n7000 Lk53
Text: Philips Components 2N7000 Data sheet status Product specification date o f Issue October 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low R 0S on SYMBOL • Direct interface to C-MOS, TTL, etc. Vos drain-source voltage
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OCR Scan
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2N7000
VeSimat25
003b232
ZN7U00
bLS3T31
003b233
MCB700
n7000
A 673 C2 transistor
2n7000
Lk53
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors D ata sheet status Product specification date of issue A pril 1 9 9 5 2N7000 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low RDS on SYMBOL • Direct interface to C-MOS, TTL, etc. VDs drain-source voltage
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OCR Scan
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2N7000
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status Product specification date of Issue October 1990 2N7000 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FE A T U R E S . L o w R 0S on SYM BOL • Direct interface to C-M O S, TTL,
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OCR Scan
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2N7000
MCB70J
bS3T31
003b232
003b233
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il
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OCR Scan
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2N7000/D
com-TOUCHTONE602-244-6609
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PDF
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MOSFET S170
Abstract: s170 mosfet s170 S-52429 1000J s170 to92
Text: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *t>S on M a x (Q ) V G S (th )(V ) 2N7000 5 @ V q s = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VG S = 10 V 1 to 2.5 0.115 V(BR)DSS M i n (V )
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OCR Scan
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2N7000/7002,
BS170
2N7000
2N7002
BS170
S-52429--
28-Apr-97
VQ1000J/P,
MOSFET S170
s170 mosfet
s170
S-52429
1000J
s170 to92
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