2N7000 DATA SHEET Search Results

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

2n7000 motorola

Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

2N7000 MOTOROLA

Abstract: 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola"
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

To92 transistor motorola

Abstract: 2N7000 fet 2n7000
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

BS170 116

Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
Contextual Info: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R

2N7000

Abstract: MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

MCB700

Abstract: n7000 A 673 C2 transistor 2n7000 Lk53
Contextual Info: Philips Components 2N7000 Data sheet status Product specification date o f Issue October 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low R 0S on SYMBOL • Direct interface to C-MOS, TTL, etc. Vos drain-source voltage

Contextual Info: Philips Semiconductors D ata sheet status Product specification date of issue A pril 1 9 9 5 2N7000 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low RDS on SYMBOL • Direct interface to C-MOS, TTL, etc. VDs drain-source voltage

BC237

Abstract: 2N7000 Fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR

Contextual Info: Philips Components Data sheet status Product specification date of Issue October 1990 2N7000 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FE A T U R E S . L o w R 0S on SYM BOL • Direct interface to C-M O S, TTL,

Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il

2N700

Abstract: 2n7000 100C 2N7002 CBVK741B019 NDS7002A PN2222N "ON Semiconductor" 2N7002 2N700 mosfet
Contextual Info: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

2N7000 021

Abstract: 2N7000 MOSFET D3000 2n7000 Mosfet 2n7000 2n7000 data sheet nds7000 2n7000 equivalent 2n7002-1 2N700
Contextual Info: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

07153

Abstract: 03aa02
Contextual Info: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .

2n7000

Abstract: 2N7002 2N700 100C CBVK741B019 NDS7002A PN2222N 2N700 mosfet
Contextual Info: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

2N7000 MOSFET PIN DETAILS

Abstract: 2N7000ZL1G 2n7000 mosfet 2n7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP
Contextual Info: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc

VQ1000J

Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

2N7000 MOSFET

Abstract: Mosfet 2n7000
Contextual Info: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .

MOSFET S170

Abstract: s170 mosfet s170 S-52429 1000J s170 to92
Contextual Info: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *t>S on M a x (Q ) V G S (th )(V ) 2N7000 5 @ V q s = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VG S = 10 V 1 to 2.5 0.115 V(BR)DSS M i n (V )

equivalent of BS170

Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P

2N7000 MOSFET PIN DETAILS

Contextual Info: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc

2n7000 equivalent

Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

2N7000

Abstract: 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1
Contextual Info: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Gate–Source Voltage – Continuous

2N7000 TO-92

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing