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    sc 6038

    Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
    Text: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching


    OCR Scan     		PDF t3b75SM 2N602Ô 2N6034 2N6035 2N6036 2N6034, 2N6037 2N6035, 2N6038 2N6036, sc 6038 N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037

    npn darlington transistor 150 watts

    Abstract: 2n6038 2N6039 transistor 2n6038 2N6035 2N8030
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N8030 thru 2N6031 8m 2NS630J Plastic Darlington Com plem entary Silicon Power Transistors PNP 2N 6035 . . . designed for general-purpose amplifier and low-speed switching applications. • • • • • High DC Current Gain —


    OCR Scan     		PDF 2N8030 2N6031 2NS630J 2N6035, 2N6038 2N6036, 2N6039 O-225AA 2N603S 2N6036 npn darlington transistor 150 watts 2n6038 transistor 2n6038 2N6035

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


    OCR Scan     		PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt