2N6037 Search Results

sc 6038

Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
Contextual Info: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching

Contextual Info: 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base

2N6034

Abstract: 2N6036 2N6035 6038
Contextual Info: SavantIC Semiconductor Product Specification 2N6034 2N6035 2N6036 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier

2N6039

Abstract: 2N6037 2N6038 2n6034
Contextual Info: SavantIC Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier

2N6037

Contextual Info: 2N6037 NPN medium power darlington transistor 4A 40V 5.26 Transisto. 1 of 1 Home Part Number: 2N6037 Online Store 2N6037 Diodes NPN m edium po w er darlingt o n t ransis t o r 4 A 4 0 V Transistors

Contextual Info: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors

JE370

Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
Contextual Info: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176

to126 case

Abstract: BD139 BD136
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON POWER DARLINGTON TRANSISTORS PNP 2N6034, 2N6035, 2N6036 (NPN) 2N6037, 2N6038, 2N6039 TO126 Plastic Package EC B Designed for General -Purpose Amplifier & Low Speed Switching Applications.

N6034

Abstract: TIC 122 Transistor 2M6039 2N6029 2N6034 2N6037 2N6039 K1461 2N6035 2N6036
Contextual Info: M O TO R OL A SC X S T R S /R 15E D | F b3b?354 ' OGflHSfiO T | 2N602Ô 7 :3 J MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . « designed fo r general-purpose amplifier and low-speed switching

2N6036

Abstract: 2N6034 2N6035
Contextual Info: Inchange Semiconductor Product Specification 2N6034 2N6035 2N6036 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2N6037/6038/6039 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for general-purpose amplifier

2N6039

Abstract: 2N6037 2N6038 2N603 2n6034
Contextual Info: Inchange Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2N6034/6035/6036 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for general-purpose amplifier

2N6037

Abstract: 2N6039 125OC 2N6034 2N6035 2N6036 2N6038
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON POWER DARLINGTON TRANSISTORS PNP 2N6034, 2N6035, 2N6036 (NPN) 2N6037, 2N6038, 2N6039 TO126 Plastic Package EC B Designed for General -Purpose Amplifier & Low Speed Switching Applications.

Power Transistors TO-126 Case

Abstract: MJE240 MJE520 datasheet MJE520 equivalent mje521 equivalent MJE243 equivalent BD139 N BD234 BD683 MJE234
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

2N6034

Abstract: 2N6037 2N6035 2N6036 2N6038 2N6039
Contextual Info: Datasheet 2N6034 2N6035 2N6036 PNP C e n tra l 2N6037 2N6038 2N6039 NPN COMPLEMENTARY S ILIC O N DARLINGTON sem iconductor worp. TRANSISTORS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O - 126 CASE Manufacturers of World Class Discrete Semiconductors

BOX53

Abstract: BOW83 NSOU45 PM016K40 BD875 6037Y MPS-U45 MPSU45 Motorola MPSU45 BSS50 SOT
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) Min NPN Darlington Transistors, (Cont'd) 5 10 MPSU45 MPSU45 2S01413 2S0687 2N6037 MJE3300 6037Y SOM3300 SOM3300 SOM3303 Solid Stine Motorola ToshlbaCorp ToshibaCorp

2N6037

Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON POWER DARLINGTON TRANSISTORS PNP 2N6034, 2N6035, 2N6036 (NPN) 2N6037, 2N6038, 2N6039 TO126 Plastic Package EC B Designed for General -Purpose Amplifier & Low Speed Switching Applications.

2N6037

Abstract: 125OC 2N6034 2N6035 2N6036 2N6038 2N6039
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON POWER DARLINGTON TRANSISTORS PNP 2N6034, 2N6035, 2N6036 (NPN) 2N6037, 2N6038, 2N6039 TO126 Plastic Package EC B Designed for General -Purpose Amplifier & Low Speed Switching Applications.

2N5192 BD441

Abstract: 2N4923 bd435 BD435/BD436 bf469 or equivalent darlington bd139 2N4921 2N4922 2N5190 2N5191
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

2N6034

Abstract: 2n60 2N6039 SGS 2N6035 2N6036 2N6037 2N6038 2N6039
Contextual Info: 7 T E ci E 3 7 002^377 1 • "~ P 3 2 > - Z P\ SCS-THOMSON iiLiCTIFMOOS S G S-TH0MS0N 2 N6034/35/36 2 N6037/38/39 3QE » MEDIUM POWER DARLINGTONS DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epi­ taxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

t1p117

Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C