2N5551B
Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2N5551-
MMBT5551
MMBT5551
2N5551
OT-23
2N5551
2N5551B
tr 5551
2N5551 SOT23
BR 5551
2N5551 circuit
2N5551BU
BR N 5551
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Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2N5551
MMBT5551
2N5551
OT-23
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2N5551 fairchild
Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2N5551
MMBT5551
2N5551
OT-23
2N5551 fairchild
2N5551 SOT23
2N5551 circuit
2N5551 SOT-23
MMBT5551
MMBT5551 3s
sot23 marking 3S
marking 3s
SM 3197
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2N5551 SOT23
Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2N5551-
MMBT5551
2N5551
OT-23
MMBT5551
2N5551 SOT23
2N5551 circuit
2N5551
2N5551 fairchild
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2N5551
Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
BF242
CBVK741B019
F63TNR
MMBT5551
PN2222N
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
2N5551 SOT-23
BF242
CJE SOT-23
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2n5551
Abstract: 2N5551 SOT23 MMBT5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
2N5551 SOT23
MMBT5551
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Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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2N5551
MMBT5551
2N5551
OT-23
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
transistor 2n5551
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BF242
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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2N5551
MMBT5551
2N5551
OT-23
OT-23
BF242
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2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
2N5551YIUBU
2N5551YTA
2N5551TA
2N5551CBU
2N5551IUTA
2N5551B
2n5551yc
sot-23 marking NE
2N5551BU
2N5551Y
5551n
transistor marking code ne SOT-23
2n5551c-y
2N5551YBU
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2N5551
Abstract: MMBT5551 2N5551C
Text: MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBT5551
2N5551
OT-23
2N5551
MMBT5551
2N5551C
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2N5551
Abstract: MMBT5551
Text: N MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBT5551
2N5551
OT-23
2N5551
MMBT5551
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2N5551
Abstract: MMBT5551
Text: MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBT5551
2N5551
OT-23
2N5551
MMBT5551
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2N3819 MOTOROLA
Abstract: mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857
Text: EOL Life Support Program Revised: 3 May 2007 EOL Life Support Program Listing as of 05/03/07 EOL ITEM# MANUFACTURER NAME A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 A12F20 A12F40 A12F60 A12F80 A16FR10 A16FR100 A16FR120
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A12FR10
A12FR100
A12FR120
A12FR20
A12FR40
A12FR60
A12FR80
A12F10
A12F100
A12F120
2N3819 MOTOROLA
mmbr2857lt1
bcy59z
BCY55
MBS4993
2N2222a PHILIPS SEMICONDUCTOR
MOTOROLA 1N4751A
2N2222A zetex
2C4209WP
MMBR2857
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2N5550
Abstract: 5551 2n 5551 2N5551 motorola 2NS551 2NSS51
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 ‘Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Vdc C o lle c to r-E m itte r Voltage VCEO 140 160 C o lle c to r-B a s e Voltage
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2N5550
2N5551*
2N5550
2N5551
1N914
2NS851
5551
2n 5551
2N5551 motorola
2NS551
2NSS51
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Untitled
Abstract: No abstract text available
Text: 4SE D • TOTTSSG GD177A1 4 ■T0S4 TOSHIBA TRANSISTOR_ 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS 'T -3 Î- TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage
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GD177A1
2N5551
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Untitled
Abstract: No abstract text available
Text: S g M iS D r o U C roR :w 2N5551 MMBT5551 Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum RatinQS TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
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BT 812
Abstract: No abstract text available
Text: i i N AMER PHILIPS/MSCRETE bTE D bbS3T31 DD2A17M OTT APX 2N 5550 2N5551 SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors for general purposes and especially telephony applications and encapsulated in a TO-92 envelope. P-N-P complements are 2N5400 and 2N5401.
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bbS3T31
DD2A17M
2N5551
2N5400
2N5401.
2N5550
bb53T31
N5550
BT 812
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BF242
Abstract: No abstract text available
Text: e ^ M IQ D N O Ü C T O R 2N5551 MMBT5551 Mark: 3S NPN General Purpose Amplifier T his device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted
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2N5551
MMBT5551
2N5551
BF242
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2N5551 CJ
Abstract: 2n5551 N5550 TI 09T 2N5400 2N5401 2N5550
Text: 11 N AMER P H I L I P S / D I S C R E T E bTE D • bbS3 T3 1 D D 2 fll7 4 Jl CHT ■ APX 2N5550 2N5551 SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors for general purposes and especially telephony applications and encapsulated in a TO-92 envelope.
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bb53cl31
0D2fll74
2N5550
2N5551
2N5400
2N5401.
2N5551 CJ
2n5551
N5550
TI 09T
2N5401
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transistor A 27611
Abstract: 27611 transistor 27611 power transistor transistor 27611 27611 MPS5551 transistor k74 FTS05550 TL 5551 A 27611
Text: FAIRCHILD SEMICONDUCTOR 3 4 6 96 7 4 F A IR C H IL D A4 S E M IC O N D U C TO R DE | 3 M t 1 L 7 4 DÜ57tQS 840 D 2760S 2N5320/2N5321 2N5322/2N5323 E S r c h T S A Schlum berger Com pany D 1~ T 3 5 -/7 10 Watt NPN-PNP Silicon Power • • • PACKAGE 2N5320
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2N5320/2N5321
2N5322/2N5323
T-33-/7
2N5320,
2N5322,
2N5321,
57W/0
transistor A 27611
27611 transistor
27611 power transistor
transistor 27611
27611
MPS5551
transistor k74
FTS05550
TL 5551
A 27611
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1N4007 diode SOD 80
Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode
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BAS28
CLL914
CMPD2836
CMPD2838
CMPD7000
CLL4448
CMPD4448
BAS56
CLL4150
CMPD4150
1N4007 diode SOD 80
1N4148 SMA
2n2222a SOT23
smd 2n3055
2N2369 SOT-23
2n3904 smd
2n3055 SOT-23
TIP41 SOT23
2N6520 sot23
SMD DIODE 1N4006
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1ff TRANSISTOR SMD MARKING CODE
Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369
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DDDQS11
OT-23
350mW
CMPT918
CMPT2222A
CMPT2369
CMPT2484
CMPT2907A
CMPT3640
CMPT3904
1ff TRANSISTOR SMD MARKING CODE
smd transistor 5c sot-23
NB ad smd transistor
SMD TRANSISTOR MARKING 6C
SMD TRANSISTOR MARKING 5c npn
smd dual diode marking code AH sot-23
BC548 TRANSISTOR SMD
smd diode ZENER marking code BC
marking code diode C1J SMD
SMD TRANSISTOR MARKING c1p
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