2N5401 fairchild
Abstract: No abstract text available
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*
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2N5401
MMBT5401
2N5401
OT-23
2N5401 fairchild
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2N5401
Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
CBVK741B019
F63TNR
MMBT5401
PN2222N
2N5401 SOT-23
mark 2L SOT-23
RB103
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2N5401 fairchild
Abstract: 2N5401 SOT-23
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*
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Original
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2N5401
MMBT5401
2N5401
OT-23
OT-23
2N5401 fairchild
2N5401 SOT-23
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PDF
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2N5401 SOT-23
Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5401
MMBT5401
2N5401
OT-23
2N5401 SOT-23
2N5401 fairchild
transistor 2N5401
MMBT5401
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PDF
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2n5401y
Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5401
MMBT5401
2N5401
OT-23
2N5401YBU
2N5401RM
2N5401CH1TA
2n5401y
2N5401yc
2N5401 fairchild
2N5401-Y
2N5401C-Y
mark 2L SOT-23
transistor 2L 5401
5401 GM
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mark 2L SOT-23
Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5401
MMBT5401
2N5401
OT-23
2N5401RA
2N5401BU
2N5401RM
2N5401TF
mark 2L SOT-23
MARKING W2 SOT23 TRANSISTOR
MARKING W3 SOT23 TRANSISTOR
2N5401B
5401 SOT-23
2N5401 fairchild
transistor marking code ne SOT-23
transistor 2N 5401
mark 2L SOT-23 6
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mark 2L SOT-23
Abstract: 2N5401 SOT-23 2N5401 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5401
MMBT5401
2N5401
OT-23
mark 2L SOT-23
2N5401 SOT-23
CBVK741B019
F63TNR
MMBT5401
PN2222N
2n5401 transistor
MJE 350 PNP power transistor
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PDF
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2N5401 SOT-23
Abstract: mark 2L SOT-23 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
Text: 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5401
MMBT5401
OT-23
2N5401
2N5401 SOT-23
mark 2L SOT-23
2N5401 fairchild
transistor 2N5401
MMBT5401
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PDF
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2N5401 SOT-23
Abstract: mark 2L SOT-23 mark 641 mark 641 sot dc transistor 2N5401 2N5401 MMBT5401
Text: 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5401
MMBT5401
OT-23
2N5401
2N5401 SOT-23
mark 2L SOT-23
mark 641
mark 641 sot dc
transistor 2N5401
MMBT5401
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2148F
Abstract: transistor 2N5401 2N5401 MMBT5401 2N5401 SOT-23
Text: N 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
OT-23
2N5401
2148F
transistor 2N5401
MMBT5401
2N5401 SOT-23
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transistor equivalent book 2N5401
Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage
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2N5400
2N5401*
2N5401
226AA)
Resist218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor equivalent book 2N5401
2n5401 equivalent
BC237
918 TRANSISTOR PNP
bc547 collector base emitter
2n5401 148
2n5400 replacement
2n2222 2n5401 2n5551
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PDF
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2n6517 sot
Abstract: No abstract text available
Text: Bipolar Transistors High Voltage Transistors > 100 V NPN − MPSW42 − BF393 2N5551 − 2N6517 MPSA42 − BF422 2N5550 2N6515 MMBT6517LT1 − MMBTA42LT1 − MMBTA43LT1 MMBT5551LT1 − MMBT5550LT1 PZTA96ST1 BSP19AT1 PZTA42T1 − BF720T1 MSD42WT1 V(BR)CEO
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MPSW42
BF393
2N5551
2N6517
MPSA42
BF422
2N5550
2N6515
MMBT6517LT1
MMBTA42LT1
2n6517 sot
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PDF
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transistor 5BM
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current
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MMBD6100LT1
236AB)
DEVICE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
transistor 5BM
BC237
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PDF
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IR3575
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc
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MMBD2835LT1
MMBD2836LT1
MMBD2836LT1
236AB)
MAR218A
MSC1621T1
MSC2404
MSD1819A
MV1620
IR3575
BC237
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PDF
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BC237
Abstract: jedec package TO-226AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
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BAV99LT1
236AB)
J218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
jedec package TO-226AA
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PDF
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BC237
Abstract: BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate – Source Voltage
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BFR30LT1
BFR31LT1
236AB)
BFR30LT1
CHAR218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
BF245
marking code M2 SOT23
BC547 collector characteristic curve
2n3053 replacement
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PDF
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BC237
Abstract: BC857A MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,
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Original
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BSS138LT1
OT-23
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
BC857A
MARKING CODE diode sod123 W1
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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Original
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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Original
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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PDF
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2N5401 SOT-23
Abstract: sot-23 marking LC MMBT5401 041 sot-23 2N5401 BT5401
Text: II CO 2N5401 / MMBT5401 I V IIL J PNP GENERAL PURPOSE AMPLIFIER INCORPORATED Features • • • High C ollector-Em itter Breakdown Voltage Epitaxial Planar Die Construction Available in both Thru-H ole and Surface M ount Packages 2N5401 MMBT5401 TO-92 SOT-23
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OCR Scan
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2N5401
BT5401
2N5401
OT-23
MIL-STD-202,
MMBT5401
OT-23
-250/JA
OT-23)
2N5401 SOT-23
sot-23 marking LC
041 sot-23
BT5401
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PDF
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sot23 t04
Abstract: mark t04 sot 2n5401 sot 23
Text: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
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OCR Scan
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2N5401
MMBT5401
2N5401
OT-23
bS01130
00407Cn
LSD113D
sot23 t04
mark t04 sot
2n5401 sot 23
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PDF
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2N5401 fairchild
Abstract: No abstract text available
Text: t JffS fe B Discrete POWER & Signal Technologies < : il S e ^ M IQ D N O Ü C T O R 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose am plifier and switch for applications requiring high voltages. Sourced from Process 74.
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OCR Scan
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2N5401
MMBT5401
2N5401
OT-23
2N5401 fairchild
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PDF
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pm2222a
Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT
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OCR Scan
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BA582
OD123
BA482
BA682
BA683
BA483
BAL74
BAW62,
1N4148
pm2222a
SOD80C PHILIPS
BCB47B
1N4148 SOD80C
PMBTA64
PXTA14
BF960
FET BFW11
BF345C
BC558B PHILIPS
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PDF
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