Untitled
Abstract: No abstract text available
Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage 2N4123 2N4124 Collector−Base Voltage 2N4123 2N4124 Emitter−Base Voltage
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2N4123,
2N4124
2N4123
2N4123/D
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2N4124G
Abstract: 2N4123 2N4123RLRM 2N4124
Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter−Base Voltage
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2N4123,
2N4124
2N4123
2N4123/D
2N4124G
2N4123
2N4123RLRM
2N4124
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2N4124
Abstract: 2N4123 2N4124G 2N4123RLRM
Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter−Base Voltage VCEO VCBO
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2N4123,
2N4124
2N4123
2N4124
2N4123
2N4124G
2N4123RLRM
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2N4123
Abstract: 2N4123RLRM 2N4124 2N4124G
Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value VCEO 2N4123 2N4124 Collector−Base Voltage Vdc 30 25 VCBO 2N4123
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2N4123,
2N4124
2N4123
2N4123/D
2N4123
2N4123RLRM
2N4124
2N4124G
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2N4123
Abstract: 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G
Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value Unit VCEO 2N4123 2N4124 Collector−Base Voltage 30 25 VCBO
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2N4123,
2N4124
2N4123
2N4123/D
2N4123
2N4124
2N4123RLRM
2N4123RLRMG
2N4124G
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 40
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2N4123
2N4124
2N4124
226AA)
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2N4124 MOTOROLA
Abstract: 2N4123 MOTOROLA 2N4124 2N4123
Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage
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2N4123/D
2N4123
2N4124
2N4123
226AA)
2N4123/D*
2N4124 MOTOROLA
2N4123 MOTOROLA
2N4124
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2N4123
Abstract: 2N4124 2N4123 MOTOROLA
Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage
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2N4123/D
2N4123
2N4124
2N4123
226AA)
2N4123/D*
2N4124
2N4123 MOTOROLA
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2n4123
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage
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2N4123/D
2N4123
2N4124
2N4124
226AA)
2N4123/D*
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SOT23 MARK Y3
Abstract: No abstract text available
Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*
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2N4124
MMBT4124
2N4124
OT-23
2N4124BU
2N4124TA
2N4124TF
2N4124RA
SOT23 MARK Y3
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1N916
Abstract: 2N4124 CBVK741B019 F63TNR MMBT4124 PN2222N
Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*
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2N4124
MMBT4124
2N4124
OT-23
1N916
CBVK741B019
F63TNR
MMBT4124
PN2222N
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1N916
Abstract: 2N4124 CBVK741B019 F63TNR MMBT4124 PN2222N
Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings*
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2N4124
MMBT4124
2N4124
OT-23
1N916
CBVK741B019
F63TNR
MMBT4124
PN2222N
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MAR 745 TRANSISTOR
Abstract: TRANSISTOR 2N4124 BP317 2N4124 2N4126 2N4124 philips mar 709
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4124 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 25 Philips Semiconductors Product specification NPN general purpose transistor
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M3D186
2N4124
2N4126.
MAM279
SCA53
117047/00/02/pp8
MAR 745 TRANSISTOR
TRANSISTOR 2N4124
BP317
2N4124
2N4126
2N4124 philips
mar 709
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2N4124 transistor
Abstract: IC102
Text: 2N4124 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features E 1 • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. • As complementary type, the PNP transistor
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2N4124
2N4126
D-74025
18-Aug-04
2N4124 transistor
IC102
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2N4124
Abstract: 2n4123 2n4123 npn transistor
Text: 2N4123 2N4124 NPN SILICON PLANAR EPITAXIAL TRANSISTOR ÌN /1 IG R C D GENERAL DESCRIPTION ; The 2N4123 and 2N4124 are NPN silic o n planar e p ita x ia l tra n s is to rs designed for general purpose sw itching and am plifier a p p licatio n s. 2N4123 and 2N4124 are
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2N4123
2N4124
2N4124
2N4125
2N4126.
O-92A
310mW
2n4123 npn transistor
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2N3904
Abstract: 2N4124
Text: Transistors 2N4124 USHA INDIA LTD GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo = 2N4124: 25V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage
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2N4124
2N4124:
625mW
2N3904
100MHz
2N4124
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2n4124
Abstract: 2N4123 MOTOROLA 2N4123
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol 2N4123 2N4124 25 Vdc 30 Vdc VCEO 30 Collector-Base Voltage VCBO 40 Emitter-Base Voltage
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2N4123
2N4124
2N4124
2N4123 MOTOROLA
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2N4123
Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
Text: 2N 4123 2N4124 NPN SILICO N IV IIC R O PLANAR EPITAX IA L E L -E G T R O IX H C S GENERAL DESCRIPTION ; The 2N4123 and 2N4124 a re NPN s ilic o n p la n ar e p ita x ia l tr a n s is to r s designed fo r g en e ral purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re
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2N4123
2N4124
2N4124
2N4125
2N4126.
O-92A
2N4123
2n4123 npn transistor
2N4123 pnp silicon
2n4125 transistor
2N412
2N4126
2n4123 pnp
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transistor
Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
Text: Alphanumerical List of Types TVpe Page 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 Small-Signal Transistor NPN Small-Signal Transistor (PNP) Small-Signal Transistor (NPN) Small-Signal Transistor (PNP) DMOS Transistor (N-Channel) DMOS Transistor (N-Channel)
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2N3904
2N3906
2N4124
2N4126
2N7000
2N7002
BC327
BC328
BC337
BC338
transistor
transistor ITT
BC548 pnp transistor
transistor pnp
BC337 pnp transistor
pnp bc547 transistor
BC327 NPN transistor
MPSA92 168
transistor 206
2n3904 TRANSISTOR PNP
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistor 2N4124 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 25 V). 1 APPLICATIONS DESCRIPTION collector 2 base 3 emitter • General purpose switching and amplification,
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2N4124
2N4126.
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2N4123
Abstract: 2N4124 2N4126 2N4125 2n4123 npn transistor
Text: 2N 4123 PLANAR EPITAXIAL GENERAL DESCRIPTION : The 2N4123 and 2N4124 a re NPN s ilic o n p la n a r e p ita x ia l t r a n s i s t o r s designed fo r g e n e ra l purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re complementary to PNP 2N4125 and 2N4126.
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2N4123
2N4124
2N4125
2N4126.
O-92A
2N4123)
2N4126
2n4123 npn transistor
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2n3904 2n3906
Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64
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2N3904
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N4401
2N4403
2N5400
2n3904 2n3906
2SC1815 2SA1015
2SC1815
2SA1015
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2N4123
Abstract: 2n4124 2n4123 npn transistor
Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: V ceo * 2N4123:30V 2N4124:25V • Collector Dissipation: Pc max »625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic Collector-Base Voltage
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2N4123/4124
2N4123
2N4124
625mW
2N3904
2n4123 npn transistor
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2N4124
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO*50nA(Max.) lEBO“50nA(Max.) @ Vcb =20V (3 Ve B“3V . Low Saturation Voltage : vCE(sat)=0.3V(Max.)
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2N4124
2N4126
100MHz
2N4124
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