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    2N3773 MOTOROLA Datasheets Context Search

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    2N3773 MOTOROLA

    Abstract: MOTOROLA 2N3773 2N3773 2N3773 transistor motorola 2n6609 2N6609 2N3773 application 2N3773 NPN Audio Power AMP Transistor
    Text: MOTOROLA Order this document by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can


    Original     		PDF 2N3773/D* 2N3773/D 2N3773 MOTOROLA MOTOROLA 2N3773 2N3773 2N3773 transistor motorola 2n6609 2N6609 2N3773 application 2N3773 NPN Audio Power AMP Transistor

    BU108

    Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc


    Original     		PDF 2N3773 2N6609 2N3773* 2N6609 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419

    2N3773 MOTOROLA

    Abstract: 2N6667 1N5825 2N3773 2N6387 2N6388 2N6609 2N6668 MSD6100 2N3773 applications
    Text: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc


    Original     		PDF 2N6667/D* 2N6667/D 2N3773 MOTOROLA 2N6667 1N5825 2N3773 2N6387 2N6388 2N6609 2N6668 MSD6100 2N3773 applications

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    30G140

    Abstract: 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N6359 B0315 MJE4340 MJE4340 B0317 PTC173 2N5629 2N6302 ~j~:~:~ 25 30 MJ6302 2N5630 BOY77 BOY77 BOY37 2N3773 BOY37A BOY37A ~j~:~:~ 35 40 MJ3773 MJ3773 MJ3773 2N5631 2S0873 BOX50 BOX50 TRW6259 ~~~~~~3


    Original     		PDF OT-121var BUV26 STIPL757 TIPL757 STIPL757A 2SC2782 2SC2694 MRF247 30G140 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608

    SU160

    Abstract: SU 160 2N3773 MOTOROLA 2N3773 2N6609 AN-41 MOTOROLA 2N3773 motorola 2n6609
    Text: COMPLEMENTARY The 2N3773 SILICON and 2N6609 signed for high power audio, POWER TRANSISTORS are EPI-BASE A power transistors disk head positioners and other de- linear applications, These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters,


    Original     		PDF 2N3773 2N6609 AN-41 SU160 SU 160 2N3773 MOTOROLA 2N3773 2N6609 MOTOROLA 2N3773 motorola 2n6609

    BT061S

    Abstract: BDX50 GENTRON STH16018 MRF435 BDY77
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT ICBO Max ON) Min (Hz) (A) Max r (CE)sat Max (s) Max (Ohms) Tp.r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 BT061 BT061R BT061RS BT061S


    Original     		PDF BT061 BT061R BT061RS BT061S BT062 BT062R BT062RS BT062S BT069 BT069R BDX50 GENTRON STH16018 MRF435 BDY77

    2N3055 plastic

    Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art


    Original     		PDF BUT11AF BUT11AF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 plastic BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100

    BU108

    Abstract: BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •


    Original     		PDF TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100

    tip122 tip127 audio amp

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc


    Original     		PDF TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS

    MJL21194 equivalent

    Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


    Original     		PDF MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications

    BU108

    Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BD438 BD442. BD437 BD441 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    Original     		PDF 220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326

    pin configuration NPN transistor BD679

    Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


    Original     		PDF BD675, BD676, BD675 BD675A BD677 BD677A BD679 BD679A BD681* TIP73B pin configuration NPN transistor BD679 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943

    2N5686 motorola

    Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.


    Original     		PDF 2N5684 2N5685 2N5686* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5686 motorola 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 MJ1000 NSP2100

    BU108

    Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS


    Original     		PDF 2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100

    BDV65B equivalent

    Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BDV65B equivalent buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340

    2SA70

    Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


    Original     		PDF 2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100

    2N3773 MOTOROLA

    Abstract: 2N3773 transistor 2N3773 NPN Transistor 2n3773 on transistor 2n3773
    Text: MOTOROLA Order this document by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Com plem entary Silicon Power Transistors PNP 2 N 66 09 The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can


    OCR Scan     		PDF 2N3773/D 2N3773 2N6609 2N3773* O-204AA 2N3773 MOTOROLA 2N3773 transistor 2N3773 NPN Transistor 2n3773 on transistor 2n3773

    motorola 2n6609

    Abstract: 2N3773 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc


    OCR Scan     		PDF 2N3773 2N6609 2N3773* 2N6609 motorola 2n6609 2N3773 transistor

    2N3773 MOTOROLA

    Abstract: motorola 2n6609 2N3773 transistor 2N3773 2N6609 MOTOROLA 2N3773 2N3773 applications 322 Motorola transistor motorola 322 15S60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773’ Com plementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. .These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc


    OCR Scan     		PDF 2N3773 2N6609 2N3773 2N6609 2N3773 MOTOROLA motorola 2n6609 2N3773 transistor MOTOROLA 2N3773 2N3773 applications 322 Motorola transistor motorola 322 15S60

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 D arlington Silicon Pow er Transistors 2N 6667 2N 6668 . . designed for general-purpose amplifier and low speed switching applications. * High DC Current Gain — hpE = 3500 (Typ) @ Iq = 4 Adc


    OCR Scan     		PDF 2N6667/D 2N6609 2N3773) 2N6667 2N6668 -220A 2N6387, 2N6388 21A-06 O-220AB

    2N3773 MOTOROLA

    Abstract: 2N6029 MJ15003 MJ15004 motorola transistor PNP 2N6031 MOTOROLA 2NC6 mj15004 pnp 2C603 2nc60
    Text: MOTOROLA SC i D I O D E S / O P T O J 6367255 MOTOROLA "Im SC D F | b 3 b 7 2 S S 0037^3 3 D ( D IO D E S / OPTO 34 C 3793Ó T'33-Ot SIL'CON POWER TRANSISTOR DICE (continued) 2C5631 DIE NO. — NPN LINE SOURCE — PL500.34 NPN PNP D 2C6031 die no. — PNP


    OCR Scan     		PDF 33-Ot PL500 2C5631 2C6031 2N3773 2N5630 2N5631 MJ3773 MJ6302 2N3773 MOTOROLA 2N6029 MJ15003 MJ15004 motorola transistor PNP 2N6031 MOTOROLA 2NC6 mj15004 pnp 2C603 2nc60