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    ROHM Semiconductor 2SD2114KT146W

    TRANS NPN 20V 0.5A SMT3
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    2SD2114KT146W Reel 6,000 3,000
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    Mouser Electronics 2SD2114KT146W 13,410
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    Verical 2SD2114KT146W 39,833 262
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    Bristol Electronics 2SD2114KT146W 1,141
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    Quest Components 2SD2114KT146W 912
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    Chip1Stop 2SD2114KT146W Cut Tape 39,833
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    ROHM Semiconductor 2SD2114KT146V

    TRANS NPN 20V 0.5A SMT3
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    DigiKey 2SD2114KT146V Cut Tape 7,203 1
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    2SD2114KT146V Digi-Reel 7,203 1
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    Mouser Electronics 2SD2114KT146V 4,419
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    Verical 2SD2114KT146V 1,585 758
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    Newark 2SD2114KT146V Cut Tape 5,368 5
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    2SD2114KT146V Reel 3,000
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    Quest Components 2SD2114KT146V 1,524
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    2SD2114KT146V 905
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    TME 2SD2114KT146V 1
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    Avnet Asia 2SD2114KT146V 24 Weeks 3,000
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    Chip1Stop 2SD2114KT146V Cut Tape 37,903
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    CoreStaff Co Ltd 2SD2114KT146V 1,585
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    Win Source Electronics 2SD2114KT146V 22,000
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    ROHM Semiconductor 2SD2118TLR

    TRANS NPN 20V 5A CPT3
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    DigiKey 2SD2118TLR Reel 2,500
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    Quest Components 2SD2118TLR 60
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    ROHM Semiconductor 2SD2118TLQ

    TRANS NPN 20V 5A CPT3
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    DigiKey 2SD2118TLQ Digi-Reel 1
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    2SD2118TLQ Reel 2,500
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    Mouser Electronics 2SD2118TLQ 2,389
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    Verical 2SD2118TLQ 2,393 288
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    Quest Components 2SD2118TLQ 1,914
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    CoreStaff Co Ltd 2SD2118TLQ 2,393
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    Linear Integrated Systems SD211DE-TO-72-4L-BK

    MOSFETs High Speed N-Channel Lateral DMOS JFET Switch With Zener Diode Protection
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    Mouser Electronics SD211DE-TO-72-4L-BK 149
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    2SD211 Datasheets (124)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD211 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD211 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD211 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD211 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD211 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD211 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD211 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD211 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD211 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD211 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD211 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD211 Unknown Cross Reference Datasheet Scan PDF
    2SD2110 Hitachi Semiconductor Silicon NPN Triple Diffused Low Frequency Power Amplifier Original PDF
    2SD2110 Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SD2110 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2110 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2110 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2110 Unknown Japanese Transistor Cross References (2S) Scan PDF
    ...

    2SD211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1412

    Abstract: 2SB1326 2SB1386 2SD2118 T100 DPACK2
    Text: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage


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    PDF 2SB1412 2SD2118 2SB1386 2SB132 2SB1412) 2SB1412 2SB1326 2SB1386 2SD2118 T100 DPACK2

    Hitachi DSA001650

    Abstract: No abstract text available
    Text: 2SD2113 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 4 kΩ Typ 300 Ω (Typ) 3 2SD2113 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage


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    PDF 2SD2113 O-220FM D-85622 Hitachi DSA001650

    Hitachi DSA001650

    Abstract: No abstract text available
    Text: 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 3.0 kΩ Typ 400 Ω (Typ) 3 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage


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    PDF 2SD2111 O-220FM D-85622 Hitachi DSA001650

    TRANSISTOR C107

    Abstract: c107 TRANSISTOR C107 IMX9 "dual TRANSISTORs" "General Purpose Transistor" c107 TRANSISTOR equivalent NPN Silicon Epitaxial Planar Transistor 2SD2114K 96517
    Text: Transistors General purpose transistor isolated dual transistors IMX9 FFeatures 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut


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    PDF 2SD2114K 96-517-C107) TRANSISTOR C107 c107 TRANSISTOR C107 IMX9 "dual TRANSISTORs" "General Purpose Transistor" c107 TRANSISTOR equivalent NPN Silicon Epitaxial Planar Transistor 96517

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 2SD2114 OT-23 100MHz 500mA,

    2SD2144S

    Abstract: No abstract text available
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


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    PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 2SD2144S

    2SD2110

    Abstract: No abstract text available
    Text: 2SD2110 Thermal resistance θj-c °C/W Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 Time t (s) 10 100 1000


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    PDF 2SD2110 2SD2110

    Untitled

    Abstract: No abstract text available
    Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)


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    PDF 2SD2114K 500mA SC-59 R1120A

    2SD2144S

    Abstract: 2SD2114K SC-72 T146
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


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    PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 2SD2144S SC-72 T146

    d204 transistor

    Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
    Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /


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    PDF 2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) d204 transistor D204 2SD2166 2SB1436 transistors 96-229-D204

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR NPN TO-252 FEATURES z Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) z Excellent DC Current Gain Characteristics. 1.BASE 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF O-252 2SD2118 O-252 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor 2SD2114KVLT1G Series Series zFeatures S-L 2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.)


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    PDF L2SD2114KVLT1G 2SD2114KVLT1G 500mA 236AB) AEC-Q101 S-L2SD2114KVLT1G OT-23

    2SD2116

    Abstract: No abstract text available
    Text: Ordering number:EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064A [2SD2116] 2.5 1.45 1.0 1.0


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    PDF EN3203 2SD2116 2SD2116] 2SD2116

    2522p

    Abstract: 2SD2118
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2Plastic-Encapsulate Transistors 2SD2118 TO-252-2 6. 50¡ À 0 . 15 2. 30¡ À 0 . 10 5. 30¡ À 0. 10 TRANSISTOR NPN 0. 51¡ À 0 . 05 5¡ ã 5¡ ã 0. 6 2. 30¡ À 0 . 10 W (Tamb=25℃) 0¡ ¡ ã«


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    PDF O-252-2Plastic-Encapsulate 2SD2118 O-252-2 500mA 100mA 100MHz 2522p 2SD2118

    3203 NPN

    Abstract: 2SD2116 3203 transistor transistor 3203
    Text: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C


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    PDF 2SD2116 3203 NPN 3203 transistor transistor 3203

    Untitled

    Abstract: No abstract text available
    Text: 2SD2115 L /(S) Silicon NPN Epitaxial Planar HITACHI Application Low frequency power amplifier Outline 3 2. C o lle c to r 3. E m itte r S Type 4. C o lle c to r Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage ^C B O


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    PDF 2SD2115

    Untitled

    Abstract: No abstract text available
    Text: 2SD2111 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2111 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage


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    PDF 2SD2111 -220FM

    Untitled

    Abstract: No abstract text available
    Text: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2SD2112 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage


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    PDF 2SD2112 O-220FM

    Untitled

    Abstract: No abstract text available
    Text: 2SD2110 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2110 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 80 V Collector to em itter voltage V cE O 80 V Emitter to base voltage


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    PDF 2SD2110 -220FM

    2SD86

    Abstract: 2SD2113 2SD864
    Text: 2SD2113 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 O 1 1. Base 2. Collector 3. Emitter o- C ^WV 4 k .O . 3 0 0 O. Typ (Typ) ¿ 2SD2113 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage


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    PDF 2SD2113 O-220FM 2SD86 2SD2113 2SD864

    2SD2103

    Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
    Text: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119


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    PDF 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2112 T0-220FM) 2SD2103 TO220FM 2SD2102 2sd209 2SD2109 STC 100u SC-63 2SD2093

    Untitled

    Abstract: No abstract text available
    Text: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 2.6 kQ. Typ [1 160 Q. (Typ) ¿ 3 ¡t'D 2SD2112 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating


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    PDF 2SD2112 -220FM 2SD1606.

    transistor d2118

    Abstract: D2118 D2118 transistor
    Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for


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    PDF 2SD2118F5 SC-63) D2118- 2SD2118F5 transistor d2118 D2118 D2118 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SD2110 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 4.5 kQ. Typ [1 500 Q. (Typ) ¿ 3 ¡t'D 2SD2110 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating


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    PDF 2SD2110 -220FM 2SD1602.