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    2N3749 Price and Stock

    Microchip Technology Inc 2N3749

    TRANS NPN 80V 5A TO111
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    Microchip Technology Inc JAN2N3749

    TRANS NPN 80V 5A TO111
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    Microchip Technology Inc JANTX2N3749

    TRANS NPN 80V 5A TO111
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    Microchip Technology Inc JANTXV2N3749

    TRANS NPN 80V 5A TO111
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    Microchip Technology Inc DATAPACK/2N3749JANTXV

    Transistor GP BJT NPN 80V 5A TO-111 - Bulk (Alt: DATAPACK/2N3749JAN)
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    Find more 2N3749 price and stock on Findchips.com

    2N3749 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3749 Microsemi NPN Transistor Original PDF
    2N3749 API Electronics 5 Amp NPN Transistors Scan PDF
    2N3749 API Electronics Short form transistor data Short Form PDF
    2N3749 API Electronics Short form transistor data Short Form PDF
    2N3749 Diode Transistor NPN TO-111 / TO-59 Transistors Scan PDF
    2N3749 Diode Transistor Transistor Short Form Data Scan PDF
    2N3749 General Diode Transistor Selection Guide Scan PDF
    2N3749 General Semiconductor Low Frequency Transistors Scan PDF
    2N3749 General Transistor NPN Power Transistors Scan PDF
    2N3749 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3749 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3749 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3749 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3749 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3749 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3749 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3749 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3749 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3749 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3749 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N3749 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5251

    Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
    Text: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX


    Original     		PDF 2N2880 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3740 2N3741 2N3749 2N5251 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421

    2N3749

    Abstract: JANTXV 2N2880 equivalent 1000C 2N2880
    Text: TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level 2N2880 JAN JANTX JANTXV 2N3749 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF MIL-PRF-19500/315 2N2880 2N3749 1000C 1000C, 2N3749 JANTXV 2N2880 equivalent 1000C 2N2880

    2N3749

    Abstract: JANTXV 2N2880 equivalent 1000C 2N2880 JANTXV2N3749
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level 2N2880 JAN JANTX JANTXV 2N3749 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF MIL-PRF-19500/315 2N2880 2N3749 1000C 1000C, 2N3749 JANTXV 2N2880 equivalent 1000C 2N2880 JANTXV2N3749

    Untitled

    Abstract: No abstract text available
    Text: 2N3749 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3749 Freq40M time80n

    Untitled

    Abstract: No abstract text available
    Text: 2N3749+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3749 Freq40M time80n

    2N2880

    Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
    Text: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B


    Original     		PDF 2N2658 2N2814 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N2880 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


    Original     		PDF 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879

    2n3749

    Abstract: No abstract text available
    Text: 2N3749 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to the JANTXV level. This TO-111 isolated package features a 180 degree lead orientation.


    Original     		PDF 2N3749 MIL-PRF-19500/315 O-111 H28/1 FED-STD-H28/1) T4-LDS-0328, 190-32UNF-2A 2n3749

    Untitled

    Abstract: No abstract text available
    Text: 2N3749 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-111 isolated package features a 180 degree lead orientation.


    Original     		PDF 2N3749 MIL-PRF-19500/315 O-111 H28/1 FED-STD-H28/1) T4-LDS-0328, 190-32UNF-2A

    Untitled

    Abstract: No abstract text available
    Text: 2N3749+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3749 Freq40M time80n

    Untitled

    Abstract: No abstract text available
    Text: 2N3749+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3749 Freq40M time80n req40M

    2N3186

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


    Original     		PDF A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N3186

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    JANTXV2N3749

    Abstract: LM 3041
    Text: P O W F P T R A N Ç R T O P Ç r ; / îw rî !?« Ja n , j a n t x , & j a n t x v 2N2880 JAN- JANTX, & JANTXV 2N3749 5 Amp, 80V, Planar, NPN FEATURES • Meets MIL-S-19500/315 • Collector-Base Voltage: 110V • Fast Switching: tr t, = 300nSec max • Low Saturation Voltage: 0.25V max @ 1A


    OCR Scan     		PDF 2N2880 2N3749 MIL-S-19500/315 300nSec 80eed 100mA JANTXV2N3749 LM 3041

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ ÙIATERTOÙJN SDE D POWER TRANSISTORS tîBM7clt33 0 0 1 E 4 7 3 BbT M U N I T JAN, JANTX, & JANTXV 2N2880 JAN, JANTX, & JANTXV 2N3749 5 Amp, 80V, Planar, NPN T-33-09 FEATU RES • Meeis MIL-S-19500/315 • Collector-Base Voltages HOV • Fast Switching; tfr t, = 300nSec max


    OCR Scan     		PDF BM7clt33 2N2880 2N3749 T-33-09 MIL-S-19500/315 300nSec 100mA

    2H2904

    Abstract: 2NI483-86
    Text: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879


    OCR Scan     		PDF 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714- 2N1722 2N1724 2N2015 2H2904

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


    OCR Scan     		PDF O-111 O-5/39 O-114 2N5415

    2N5006

    Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
    Text: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1


    OCR Scan     		PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N52B9 2N5285 2N534E 2N5347 2N5348 2N5317 2N5319 2N5731 2N5957 WALTA

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5


    OCR Scan     		PDF 0-20A 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 2N6128

    2N3016

    Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
    Text: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60


    OCR Scan     		PDF 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1 2N2877 O-111 2N3016 13421

    2N2999

    Abstract: No abstract text available
    Text: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D -7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)


    OCR Scan     		PDF O-111/TO-59 0to10A 2n2892 2n2893 2n3859 n3748 2n3749 2n3750 2n3751 2n3752 2N2999

    2N4116

    Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
    Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850


    OCR Scan     		PDF fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658

    2N5075

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C


    OCR Scan     		PDF b80-100V 2N5006 2N5008 2N5288 2N5284 2N5285 2N5346 2N5347 2N5348 2N5349 2N5075 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    2N2999

    Abstract: 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853
    Text: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D-7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)


    OCR Scan     		PDF O-111/TO-59 0to10A 2n2892 2N2893 2N3859 2N3748 2N3749 2N3750 2N3751 2N3752 2N2999 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853