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    Microchip Technology Inc 2N5957

    POWER BJT
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    2N5957 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5957 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF
    2N5957 API Electronics Short form transistor data Short Form PDF
    2N5957 API Electronics Short form transistor data Short Form PDF
    2N5957 Diode Transistor Silicon Transistors Scan PDF
    2N5957 Diode Transistor Silicon Transistors Scan PDF
    2N5957 Diode Transistor Transistor Short Form Data Scan PDF
    2N5957 General Transistor NPN Power Transistors Scan PDF
    2N5957 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5957 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5957 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5957 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5957 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5957 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5957 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5957 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5957 New England Semiconductor NPN TO-61 / TO-111 Transistor Scan PDF
    2N5957 New England Semiconductor NPN Transistors, TO-61 / TO-111 Scan PDF
    2N5957 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N5957 PPC Products Transistor Short Form Data Scan PDF
    2N5957 Semico NPN Silicon Power Transistors Scan PDF

    2N5957 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4211

    Abstract: to63 2N3597 2N3598 2N3599 2N4210 2N5329 2N5539 2N5731 2N5732
    Text: Device Type 2N3597 2N3598 2N3599 2N4210 2N4211 2N5329 2N5539 2N5731 2N5732 2N5957 2N5959 2N6046 2N6047 2N6048 SDT3201 SDT3202 SDT3203 SDT3204 SDT8002 SDT8003 SDT8012 SDT8013 SDT8015 SDT8016 SDT8045 SDT8070 SDT8071 SDT8751 SDT8753 SDT8754 SDT8755 SDT8756 SDT8757


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    PDF 2N3597 2N3598 2N3599 2N4210 2N4211 2N5329 2N5539 2N5731 2N5732 2N5957 2N4211 to63 2N3597 2N3598 2N3599 2N4210 2N5329 2N5539 2N5731 2N5732

    Untitled

    Abstract: No abstract text available
    Text: 2N5957 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)20


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    PDF 2N5957 Freq10M

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N5048

    Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959
    Text: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple­ ment VCEOfSUS) (Volte)


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    PDF NPNTO-61 2N4301 2N5048 2N5049 2N5313 2N5008 2N5288 2N5289 2N5317 2N5319 2N5048 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959

    2N5006

    Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
    Text: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N52B9 2N5285 2N534E 2N5347 2N5348 2N5317 2N5319 2N5731 2N5957 WALTA

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5


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    PDF 0-20A 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 2N6128

    2N5075

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C


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    PDF b80-100V 2N5006 2N5008 2N5288 2N5284 2N5285 2N5346 2N5347 2N5348 2N5349 2N5075 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    wic 5020

    Abstract: 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388
    Text: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E D D O O I E 11] S INC 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside NY & NJ area call TOLL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PNP C o m p le­ m en t VCEOfSUS)


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    PDF NPNTO-61 2N4301 2N5048 2N5049 2N5313 2N5008 2N5288 2N5289 2N5317 2N5319 wic 5020 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388

    Untitled

    Abstract: No abstract text available
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


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    PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412

    2N3055

    Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


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    PDF 2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    2N5076

    Abstract: 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N4116
    Text: NEIII ENGLAND SEMICONDUCTOR STE D • b5b4^3 □□□□OSa QflT B i NES ' 7 2N5006 VCEO SUS (V) 1C (MAX) W tlFE IC/VCE (min-max ® A/V) VBE (SAT) ® IC/lB (V @A/A) TC = 100 °C (Watts) 1 = 1 B6C (A ® V) ff tON @ ICJlB tOFF ® IC/lB (MHz) (¿is @ A/A)


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N5289 1S012O 2N5285 2N5346 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N4116

    Untitled

    Abstract: No abstract text available
    Text: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840


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    PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744

    Jan2N3055

    Abstract: No abstract text available
    Text: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100


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    PDF 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 Jan2N3055

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2N4116

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: NEW E N G L A N D S E M I C O N D U C T O R STE D • b5b4^3 OOODOSfi DAT * N E S 3 VCEO SUS (V) 1C (MAX) W - / NPN TO-61 = 10-20A VcEO(SUS) = 8 0-1 00V fT = 10-50 MHz lc (M A X ) Type No. 3 ISOLATED COLLECTOR Case 8 0 6 tlFE 0 IC/VCE (mln-max @ A/V) VCE (SAT)


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N5289 2N5284 2N5285 2N5346 2N5347 2N4116 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    2N3920

    Abstract: TO61 2N5330 2N5542 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
    Text: 8134693 S E M ICOA 40 dF | G00D1E7 S NPN SILIC O N POW ER T R A N SIS T O R S C o n t’d M axim um R a tin gs D e vic e Typ e N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2.811 2N2812 2H5317 2N5313 2N5552 2N561C 2N5085 2N5329 2K5659 2R2813 2N2814 2N5658


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    PDF 2N5049 2N3919 2N3920 2N5083 2N5084 2N2812 2H5317 2N5313 2K5552 2N6340 TO61 2N5330 2N5542

    jan2n6251

    Abstract: No abstract text available
    Text: Memsemi NPN Transistors Part Number NPN JANTXV2N6249 2N6250 JAN2N6250 JANS2N6250 JANTX2N6250 JANTXV2N6250 2N6674 2N6689 2N6251 JAN2N6251 JANS2N6251 JANTX2N6251 JANTXV2N6251 2N6675 2N6690 2N6546 2N6676 2N6691 JAN2N6546 JANTX2N6546 JANTXV2N6546 2N6677 2N6692


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    PDF NPN-20 jan2n6251

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


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    PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    2N1936

    Abstract: 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


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    PDF DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598

    terminals of 2n3055

    Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882
    Text: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


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    PDF 2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 terminals of 2n3055 2N4211 TO111 package 2N5882

    AP1152

    Abstract: 2N4211 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597
    Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


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    PDF DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 AP1152 2N4211

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711