2N3707 TRANSISTOR Search Results

2N3707

Abstract: 2N3711 2N3709 2n3708+equivalent
Contextual Info: 2N3707 2N3710 2N3708 2N3711 2N3709 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3707 series devices are silicon NPN transistors designed for low level, low noise 2N3707 , low level, high gain (2N3708, 2N3709, 2N3710, 2N3711) applications.

2N4058

Abstract: 2N3707 2N3707 transistor transistor 2N3707 2N3707 pin out
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR 2N3707 TO-92 Plastic Package EC B For use in AF Small Signal Amplifier Stages Complementary 2N4058 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N4058

Abstract: 2N4061 2N4062 2N4060 2N3711 2N3707 2N4059
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4058 series types are Molded Epoxy Silicon PNP Transistors designed for low level, low noise 2N4058 and Low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications. Recommended NPN complementary series is 2N3707 thru '

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

2N4058

Abstract: 2N3711 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4062 2N4061 2N3709 2N370 2N3707
Contextual Info: 2N 3707 through 2N 3711 2N 4058 through 2N 4062 NPN . PNP SILICON AF SMALL SIGNAL TRANSISTORS . ' '=••' ' 2N3707 THROUGH 2N37H NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

2n4494

Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
Contextual Info: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495

Contextual Info: 2N3707 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n4058

Abstract: 2N3707 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059
Contextual Info: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4062 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

Contextual Info: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4 0 6 2 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I •¡Hi THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

BC548 Texas Instruments

Abstract: SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557
Contextual Info: 1 Silect Coding Silect transistors are coded on the indexing flat of the TO-92 outline. Pin Configurations The majority of Silect transistors shown are available in several alternative case outlines or pin configurations which include many pre-formed lead types. Devices are therefore available

2n929

Abstract: transistor ZTX108 BC107 plastic ZTX107 ZTX108 ZTX 15 ZTX330 2N3707 ZTX342 bc107 bc108 bc109
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed

2N915

Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
Contextual Info: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:

2N4058

Contextual Info: 2N4058 2N4061 2N4059 2N4062 2N4060 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4058 series devices are silicon PNP transistors designed for low level, low noise 2N4058 , low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications.

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^cuo (V) Min ^CEO ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (W) *c (A) @Tc=25“c *C BO (mA) VCB @ (V) Ic e s V CE W (V) Max Max "re Min @ t * (mA)

Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX

2N2712

Abstract: 2N3606 2N3397 2N3564
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings V CEO (V) Min (V) Min 18 13 (V) Min 5 PD (W) (A) §Tfc25“c (mAI Max 0.1 0.5 0.625 *CBO va i *CES (V) (mA) Max 18 hrE '“CF @ (V L @ Min Max 75 225 lc X (mA) 2 ^CE V CE(SAT) (VI (V) Max V BE(SAn

2N3707 DIODE

Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed

2N5551YCECB

Contextual Info: I Small Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEAD v E B O *C B O Ï V C BC nA (V) (V) (V) * 'C E S •V CES * *'C E V MIN MIN MAX (V) M IN 2N2712 NPN AMPL/SWITCH ECB 18 18 5.0 500 18 v CE hFE VC BO v CEO CODE (V) ® I C V C E (S A T ) @ , C

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444

2n2712 data sheet

Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0

2N4058

Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff

n3904

Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off

silect

Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
Contextual Info: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level