2N2243 TRANSISTOR Search Results

2n2243 transistor

Contextual Info: m 2N2243 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W

102n3500

Abstract: 2N2440 2N2243 2N2270 2N3019 2N3020 2N3053 2N3300 2N3440 2N3498
Contextual Info: TO-38 Metal-Can Package Transistors NPN! _ _ * Lag Maximum Ratings Type No. 2N2243 VCBO (V Min ^CEO (V) Min 120 80 ^EBO (V) Min Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) Pd (W) Tc=25°c 'c (A) (A) (HA) Max

2N2243

Contextual Info: TO-39 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No 2N2243 ^CBO V CEO ^E B O PD !c 'cm 'cB O ^C8 'ces ^C E (V) Min (V) Min (V) Min (W) @Tc=25°c (A) (A) (pA) Max e (v) (pA) Max

Contextual Info: 2N2243 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)150m

2N2243

Abstract: 2N2193A 2N2243A
Contextual Info: TYPES * J M * 2N2243, 2N2243A N -P -N SILICON TRANSISTORS B U L L E T IN NO . D L -S 733571, M A R C H 1 9 6 3 - R E V IS E O M ARC H 1973 F O R M E D IU M -P O W E R S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S • High Breakdown Voltage Combined with

2N3055

Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
Contextual Info: Illl iF ti mi Semelab Mil / Aerospace Division NATO LISTED TRANSISTO R PRO D UCT Semelab is listed and supplies transistors for use in NATO military systems. Semelab’s CAGE number is U3158. Below is a SELECTION from the 740 device types listed. NATO NUMBER

2N2310

Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

transistor t05

Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697
Contextual Info: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200

2n3037

Abstract: LT 752 2N2243 2N3039 2N3038
Contextual Info: TYPES 2N3037, 2N3038 N-P-N SILICON TRANSISTORS B U L L E T I N NO. D L - S 634251, A U G U S T 1963 F O R G E N E R A L P U R P O S E A M P L IF IE R A N D S W IT C H IN G A P P L IC A T IO N S • High Breakdown Voltage Com bined With Very Low Saturation Voltage

2N2270 equivalent

Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

tt 2194

Abstract: 2N2193 2N2193A 2N2192 TEXAS INSTRUMENTS 2N2192 NS2N 2n2243
Contextual Info: TYPES 2N2192, 2N2192A. 2N2193. 2N2193A. 2N2194, 2N2194A, N-P-N SILICON TRANSISTORS B U L L E T IN • I NO. D L S 733571, M AR C H 1 9 6 3 -R E V IS E D M A R C H 1973 F O R M E D IU M -P O W E R S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S

Contextual Info: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max

n4300

Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
Contextual Info: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.

2N2440

Abstract: 2N1837 2n1840 BSX46-S 2N3553 NPN bc140 transistor 2n2270 BF336 BSY52 2n657 sal
Contextual Info: TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO (V) Min V C EO V E BO (V) Min (V) Min ^CBO (MA) Max V CB hFE O (V) tc •& V C E (mA) (V) Min Max V C E (Sal) & V B E (Sal) ® (V) M ax 'c (V) (mA) Min Max 3.000 10.0 0.75 15 10.000 10.0 1.00 360 40

2H2222A

Abstract: 2MM72 2N2696 2N2708 2N2312 2n2959 2n708s 2N2195B
Contextual Info: jomitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon small signal transistors Maximum Ratings Oevke Type Package Pd Ambient mW 2*497 2N498 2MS6 2m i mat mn mat mm NPN NPN NPN NPN NPN TO TO TO TO TO 5 5 5 5 5 800 BOO BOO 800 600 E le c tfiu r il ChaiacTu fis ti! s

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

CDIL BC141-16

Abstract: BFX40 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840
Contextual Info: -39 : H DIM A B C D E F G H J K PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR L MEN 8,50 7,74 6,09 0,40 - 2,41 4,82 0,71 0,73 12,7 42 DEG . ' MAX 9,39 8,50 6,60 0,53 0,88 2,66 5,33 0,86 1,02 48 DEG ALL DIMENSIONS ARE IN M.M. TO-39 Metal-Can Package Transistors NPN

102n3500

Abstract: 2n2440 2n3502 2N699 bsx62-16 2N1613 2N1644 BFX2 2N1837 2N656
Contextual Info: PIN C O N FIG U R A TIO N 1. EM ITTER 2. BASE 3. COLLECTOR DIM MIN M AX A 8,50 9,39 B 7,74 8,50 C 6,09 6,60 D 0,40 0,53 E - 0,88 F 2,41 2,66 G 4,82 5,33 H 0,71 0,86 J 0,73 1,02 K 12,7 - L 42 DEG 4 8 DEG ALL D IM E N SIO N S A RE IN M.M. TO-39 Metal-Can Package Transistors NPN

"NPN Transistors" 2n3567

Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Contextual Info: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

triac LT 5220

Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
Contextual Info: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)

2N3567

Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5
Contextual Info: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any