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    MPSW06 Price and Stock

    Rochester Electronics LLC MPSW06

    TRANS NPN 80V 0.5A TO92
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    DigiKey MPSW06 Bulk 2,219
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    onsemi MPSW06

    TRANS NPN 80V 0.5A TO92
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    DigiKey MPSW06 Bulk 10,000
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    Rochester Electronics MPSW06 41,000 1
    • 1 $0.13
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    onsemi MPSW06G

    TRANS NPN 80V 0.5A TO92
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    Bristol Electronics MPSW06G 20
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    Rochester Electronics MPSW06G 54,576 1
    • 1 $0.1733
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    Rochester Electronics LLC MPSW06G

    TRANS NPN 80V 0.5A TO92
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    DigiKey MPSW06G Bulk 1,665
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    onsemi MPSW06RLRA

    TRANS NPN 80V 0.5A TO92
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    DigiKey MPSW06RLRA Cut Tape 1
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    Bristol Electronics MPSW06RLRA 4,000
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    MPSW06 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MPSW06 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    MPSW06 On Semiconductor One Watt Amplifier Transistors Original PDF
    MPSW06 On Semiconductor One Watt Amplifier Transistors(NPN Silicon) Original PDF
    MPSW06 Fairchild Semiconductor NPN General Purpose Amplifier Scan PDF
    MPSW06 Motorola European Master Selection Guide 1986 Scan PDF
    MPSW06 Unknown Cross Reference Datasheet Scan PDF
    MPSW06 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MPSW06 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MPSW06 National Semiconductor Medium Power Transistors Scan PDF
    MPSW06 National Semiconductor NPN General Purpose Amplifier Scan PDF
    MPSW06 National Semiconductor Medium Power NPN Transistors Scan PDF
    MPSW06G On Semiconductor One Watt Amplifier Transistors; Package: TO-92 (TO-226) 7.87mm Body Height 1Watt; No of Pins: 3; Container: Bulk; Qty per Container: 5000 Original PDF
    MPSW06RLRA On Semiconductor One Watt Amplifier Transistors; Package: TO-92 (TO-226) 7.87mm Body Height 1Watt; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 Original PDF
    MPSW06RLRA On Semiconductor One Watt Amplifier Transistors Original PDF
    MPSW06RLRAG On Semiconductor One Watt Amplifier Transistors; Package: TO-92 (TO-226) 7.87mm Body Height 1Watt; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 Original PDF

    MPSW06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPSW05

    Abstract: mpsw06 102k1k
    Text: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage


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    PDF MPSW05 MPSW06 MPSW06 226AE) 102k1k

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MPSW05/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage


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    PDF MPSW05/D MPSW05 MPSW06* MPSW06 MPSW05/D*

    MPSW05

    Abstract: MPSW06
    Text: ON Semiconductort MPSW05 MPSW06* One Watt Amplifier Transistors NPN Silicon *On Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage


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    PDF MPSW05 MPSW06* MPSW06 226AE) r14525 MPSW05/D MPSW05 MPSW06

    MPSW06G

    Abstract: MPSW06 MPSW06RLRA MPSW06RLRAG MPSW05 MPSW05G Marking code mps
    Text: MPSW05, MPSW06 MPSW06 is a Preferred Device One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating MPSW05 MPSW06 VCEO


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    PDF MPSW05, MPSW06 MPSW06 MPSW05 MPSW05/D MPSW06G MPSW06RLRA MPSW06RLRAG MPSW05 MPSW05G Marking code mps

    IC 2910

    Abstract: MPSW06
    Text: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector −Emitter Voltage VCEO 60 80 Vdc Collector −Base Voltage VCBO 60 80 Vdc Emitter −Base Voltage


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    PDF MPSW05 MPSW06 MPSW06 O-226AE) IC 2910

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage


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    PDF MPSW05 MPSW06 MPSW06 226AE) r14525 MPSW05/D

    Untitled

    Abstract: No abstract text available
    Text: MPSW06 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)250m


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    PDF MPSW06 Freq50M

    MPSW06

    Abstract: MPSW05 MPSW05G MPSW06G MPSW06RLRA MPSW06RLRAG
    Text: MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW05 MPSW06 VCEO 60 80 Vdc Collector −Base Voltage


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    PDF MPSW05, MPSW06 MPSW05 MPSW05/D MPSW06 MPSW05 MPSW05G MPSW06G MPSW06RLRA MPSW06RLRAG

    ic 3843

    Abstract: ic 3843 datasheet MPSW06 MPSA06
    Text: MPSW06 C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF MPSW06 O-226 MPSA06 ic 3843 ic 3843 datasheet MPSW06

    Untitled

    Abstract: No abstract text available
    Text: MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW05 MPSW06 VCEO 60 80 Vdc Collector −Base Voltage


    Original
    PDF MPSW05, MPSW06 MPSW05 MPSW05/D

    ANSI Y14.5

    Abstract: MAL100
    Text: MPSW05 MPSW06 NPN ONE WATT SiLICON AMPLIFIER TRANSISTORS designed for use as medium-power @ High Collector-Emitter V BR CEO = 60 Vdc (Min) = 80 Vdc (Min) @ Low Collector-Emitter vCE(sat) I Collector-Base Voltage Emitter-Base Voltage ~‘ Total Power Dis~@$$:@


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    PDF MPSW05 MPSW06 MPSW56 1d805 0S5833 ANSI Y14.5 MAL100

    MPSW05

    Abstract: MPSW06
    Text: MOTOROLA Order this document by MPSW05/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage


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    PDF MPSW05/D MPSW05 MPSW06* MPSW06 MPSW05/D* MPSW05 MPSW06

    MPSW06 equivalent

    Abstract: BC237 Motorola MPSA42
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage VCEO 60 80 Vdc Collector – Base Voltage


    Original
    PDF MPSW05 MPSW06* MPSW06 226AE) Thermal218A MSC1621T1 MSC2404 MSD1819A MV1620 MPSW06 equivalent BC237 Motorola MPSA42

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    24V 20A SIEMENS battery charger

    Abstract: 48v to 24v buck an5435 an5430 an5424 AN5437 application note 54 ltc1149 LT1149 UPL1C222MRH SMP40P06
    Text: Application Note 54 March 1993 Power Conversion from Milliamps to Amps at Ultra-High Efficiency Up to 95% Dimitry Goder Randy Flatness INTRODUCTION High efficiency is frequently the main goal for power supplies in portable computers and hand-held equipment.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06 * NPN Silicon 'Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector- Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage


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    PDF MPSW05 MPSW06 DDT345Ã

    1P NPN

    Abstract: 3843 3843 application note MPSA06 MPSW06
    Text: SEMICONDUCTOR MPSW06 NPN General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 33. See M PSA06 for characteristics. Absolute Màximum RStinQS T A = 2 5 ° C unless o th e rw ise noted


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    PDF MPSW06 O-226 MPSA06 1P NPN 3843 3843 application note MPSW06

    MMBTA06

    Abstract: MPSW06
    Text: MPSA06/MPSW06/MMBTA06 N AT L SEMI CONO DISCRETE 11E D | t S D 1 1 3 D _0 0 3 7 E t . a T-27-05 CTH National æ j Semiconductor M PSW 06 M PSA06 ¥ U E 0 UU Bc M M BTA06 ^ iß IIIHl 10-92 t TUG/10100-1 UH BC B | TO-236 S01' 23 T0-226AE TUG/10100-6 L/G/10100-4


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    PDF SD113D 0D37Et MPSW06 MMBTA06 TUG/10100-1 O-226AE O-236 OT-23) TUG/10100-6 TUG/10100-4 MMBTA06 MPSW06

    Untitled

    Abstract: No abstract text available
    Text: MPSW05 MPSW06* MAXIMUM RATINGS Symbol Rating MPSW05 MPSW06 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage v CBO 60 80 Vdc Emitter-Base Voltage v EBO 4.0 Vdc Collector Current — Continuous *C 500 mAdc Total Device Dissipation f« T a = 2 5 X


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    PDF MPSW05 MPSW06 MPSW06* O-226AE) MPSW06

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon ‘Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B ase Voltage E m itter-B ase Voltage Symbol MPSW05


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    PDF MPSW05 MPSW06* MPSW05 MPSW06

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R MPSW06 NPN General Purpose Amplifier T his device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 33. See M PSA06 for characteristics. Absolute Maximum RâtinÇjS Symbol


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    PDF MPSW06 PSA06

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR MPSW06 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted


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    PDF MPSW06 MPSA06

    Untitled

    Abstract: No abstract text available
    Text: MPSW05 MPSW06* M A X IM U M RATINGS Symbol Rating MPSW05 MPSW06 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc v E BO 4.0 Collector Current — C o ntin uo us •c 500 m A dc Total Device Dissip ation a T a = 25°C Derate above 2 5 T


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    PDF MPSW05 MPSW06 MPSW06* T0-92 O-226AE) MPSW05,

    Untitled

    Abstract: No abstract text available
    Text: MPSA06/MPSW06/MMBTA06 National Semiconductor WA Jum MPSA06 MPSW06 MMBTA06 [C / \ j / / / M iJlilJ ////// /ffiy m E„ \ 0$ TO-2 3 6 /m / / # TO - 226AE r //// V T° - 92 U TL/G/10100-1 S0T- 23 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -d NPN General Purpose Amplifier


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    PDF MPSA06/MPSW06/MMBTA06 MPSA06 MPSW06 MMBTA06 226AE