Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N138 Search Results

    SF Impression Pixel

    2N138 Price and Stock

    ECS International Inc ECXV-H37C2N-138.24

    XTAL OSC VCXO 138.24MHZ SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECXV-H37C2N-138.24 10
    • 1 -
    • 10 $5.978
    • 100 $5.978
    • 1000 $5.978
    • 10000 $5.978
    Buy Now
    Mouser Electronics ECXV-H37C2N-138.24
    • 1 $6.19
    • 10 $6.13
    • 100 $5.69
    • 1000 $5.44
    • 10000 $5.44
    Get Quote

    ECS International Inc ECXV-H37C2N-138.24-TR

    Controlled Oscillator 138.24MHz VCXO HCMOS 6-Pin SMD T/R - Trays (Alt: ECXV-H37C2N-138.24)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ECXV-H37C2N-138.24-TR Tray 12 Weeks 10
    • 1 -
    • 10 $4.1475
    • 100 $4.1475
    • 1000 $4.1475
    • 10000 $4.1475
    Buy Now

    SICK AG WTB2S-2N1380

    Photoelectric Sensor, 40Mm, Npn, 10-30V Rohs Compliant: Yes |Sick WTB2S-2N1380
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark WTB2S-2N1380 Bulk 1
    • 1 $331.34
    • 10 $258.32
    • 100 $214.87
    • 1000 $214.87
    • 10000 $214.87
    Buy Now

    Samsung Semiconductor 2N1380

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N1380 7 1
    • 1 $18
    • 10 $18
    • 100 $18
    • 1000 $18
    • 10000 $18
    Buy Now
    Quest Components 2N1380 5
    • 1 $19.5
    • 10 $19.5
    • 100 $19.5
    • 1000 $19.5
    • 10000 $19.5
    Buy Now

    Texas Instruments 2N1381

    TRANSISTOR,BJT,PNP,25V V(BR)CEO,200MA I(C),TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N1381 41
    • 1 $9
    • 10 $6.6
    • 100 $6
    • 1000 $6
    • 10000 $6
    Buy Now

    2N138 Datasheets (142)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N138 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N138 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N138 Unknown Vintage Transistor Datasheets Scan PDF
    2N138 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N138 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N138 Unknown GE Transistor Specifications Scan PDF
    2N138 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N138 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1380 Germanium Power Devices Germanium PNP Small Signal Transistors Scan PDF
    2N1380 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1380 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1380 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1380 Unknown Vintage Transistor Datasheets Scan PDF
    2N1380 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1380 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1380 Unknown GE Transistor Specifications Scan PDF
    2N1380 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1380 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1380 Semitron Alloy Junction Germanium Transistor Scan PDF
    2N1380 Semitronics Alloy-Junction Germanium Transistors Scan PDF
    ...

    2N138 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N1388 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N1388 Freq50MÂ

    Untitled

    Abstract: No abstract text available
    Text: 2N1384 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)240m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)3.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original
    PDF 2N1384 Freq20M

    Untitled

    Abstract: No abstract text available
    Text: 2N138A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    PDF 2N138A

    Untitled

    Abstract: No abstract text available
    Text: 2N1387 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)6.0 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)5.0m


    Original
    PDF 2N1387

    Untitled

    Abstract: No abstract text available
    Text: 2N1380 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12ã V(BR)CBO (V)12 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.27 h(FE) Max. Current gain.330


    Original
    PDF 2N1380

    AC122

    Abstract: 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number NKT223 2N1384 2N1384 2N1384 NKT304 2G320 AC116 AC116 2N565 2N566 10 ~~~:~ 2S8171 2S8171 OC75 OC75 2N226 2N414 2N414A UPI1307 15 20 ~~JJg; NKT139 2N805 2N806 2N428 ASY54N 2N2930 2N2541 2S8135 25 30 ~~~1;j502~


    Original
    PDF NKT223 2N1384 NKT304 2G320 AC116 2N565 2N566 AC122 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP

    Untitled

    Abstract: No abstract text available
    Text: 2N1381 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.27 h(FE) Max. Current gain.330


    Original
    PDF 2N1381

    Untitled

    Abstract: No abstract text available
    Text: 2N1383 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.27 h(FE) Max. Current gain.165


    Original
    PDF 2N1383

    2S877

    Abstract: diode GG 14 2S8370 Low-Power Germanium PNP AF201U TA269 2N270 2s875 2G108 2N404
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2S843 MA899 MA899 TA269 TA269 TA269 2N404 2N1370 2N1374 2N1382 ~~~~g~A 15 20 2N1287 2N658 1340 GT20 GT20 GT83 GT83 TAM14 +~~: 25 30 TA14 TR18 TA18 TR18 2S8185 2S8111 2N249 2N291 ~~~~OU 35 -40 AF201U 2N131


    Original
    PDF 2S843 MA899 TA269 2N404 2N1370 2N1374 2N1382 2S877 diode GG 14 2S8370 Low-Power Germanium PNP AF201U 2N270 2s875 2G108

    Untitled

    Abstract: No abstract text available
    Text: 2N1382 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.45 h(FE) Max. Current gain.165


    Original
    PDF 2N1382

    Untitled

    Abstract: No abstract text available
    Text: 2N1389 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50â V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150’ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N1389 Freq25M

    Untitled

    Abstract: No abstract text available
    Text: 2N1386 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)6.0 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)5.0


    Original
    PDF 2N1386

    Untitled

    Abstract: No abstract text available
    Text: 2N138B Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    PDF 2N138B

    Untitled

    Abstract: No abstract text available
    Text: 2N138 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)12 I(C) Max. (A)20m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)40’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)6.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original
    PDF 2N138

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan
    PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan
    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2n1841

    Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan
    PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2n1841 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438

    2N1378

    Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
    Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145


    OCR Scan
    PDF 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N1378 2N1924 2N2374 2N1373 2N1274 2N1305 2N2001

    D634 transistor

    Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan
    PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 D634 transistor 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536

    2SA143

    Abstract: transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    PDF USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2SA143 transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465

    2N1377

    Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
    Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180


    OCR Scan
    PDF NS257 2N1377 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


    OCR Scan
    PDF 2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan
    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan
    PDF