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    2SA80 Search Results

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    2SA80 Price and Stock

    NEC Electronics Group 2SA800

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    Quest Components 2SA800 132
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    Integrated Device Technology Inc IDT7202SA80TP

    1K X 9 OTHER FIFO FIFO, 1KX9, 80ns, Asynchronous, CMOS, PDIP28
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    ComSIT USA IDT7202SA80TP 24
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    2SA80 Datasheets (119)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA80 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA80 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA80 Unknown Cross Reference Datasheet Scan PDF
    2SA80 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA80 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA80 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA80 Unknown Vintage Transistor Datasheets Scan PDF
    2SA80 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA80 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA800 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA800 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA800 Unknown Transistor Replacements Scan PDF
    2SA800 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA800 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SA800 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA800 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SA800 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA800 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA800 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA800 NEC PNP Silicon General Purpose UHF Transistors Scan PDF

    2SA80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA808

    Abstract: 2SA80
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA808 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for general purpose applications.


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    PDF 2SA808 -50mA 2SA808 2SA80

    2SA807

    Abstract: 2SC1618
    Text: SavantIC Semiconductor Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING see Fig.2


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    PDF 2SA807 2SC1618 -50mA 2SA807 2SC1618

    Untitled

    Abstract: No abstract text available
    Text: j tx , One, *_/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA808 DESCRIPTION • High Power Dissipation: Pc= 50W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage= -80V(Min.)


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    PDF 2SA808 -50mA

    fn651

    Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
    Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102


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    PDF 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 fn651 CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343

    2sc1619

    Abstract: 2SA808
    Text: JMnic Product Specification 2SA808 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・Complement to type 2SC1619 APPLICATIONS ・For power amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


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    PDF 2SA808 2SC1619 50ter -50mA 2sc1619 2SA808

    2SC1618

    Abstract: 2sa807
    Text: Inchange Semiconductor Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING see Fig.2


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    PDF 2SA807 2SC1618 -50mA 2SC1618 2sa807

    2SA807

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA807 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) APPLICATIONS ·Designed for general purpose applications.


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    PDF 2SA807 -50mA; 2SA807

    CTX12S

    Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
    Text: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102


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    PDF 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 CTX12S SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F

    2sa808

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA808 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for general purpose applications.


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    PDF 2SA808 -50mA 2sa808

    2sa808

    Abstract: 2sc1619
    Text: SavantIC Semiconductor Product Specification 2SA808 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1619 APPLICATIONS ·For power amplifier and general purpose applications PINNING see Fig.2


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    PDF 2SA808 2SC1619 -50mA 2sa808 2sc1619

    2SA807

    Abstract: 2SC1618
    Text: JMnic Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・Complement to type 2SC1618 APPLICATIONS ・For power amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


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    PDF 2SA807 2SC1618 50ter -50mA 2SA807 2SC1618

    2SA884

    Abstract: 2sa835 2SA823 2SA899 2SA810 2SA866 2SA840 2SA852 2SA855 2SA809
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SA801 2SA802 2SA803 2SA804 2SA805 2SA806 -20 -130 -130 -130 -180 -210 2SA807 -60 2SA808 -80 (V) (mA) (mW) -3 -5 -5 -5 -5 -5 -50 -30 -30 -50 -30 -30 Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE


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    PDF 2SA801 2SA802 2SA803 2SA804 2SA805 2SA806 2SA807 2SA808 2SA808A 2SA809 2SA884 2sa835 2SA823 2SA899 2SA810 2SA866 2SA840 2SA852 2SA855 2SA809

    Untitled

    Abstract: No abstract text available
    Text: JEIIEU ^E-mi-L-onaactoi i-Pioaueki, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA807 DESCRIPTION • High Power Dissipation: Pc= 50W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage= -60V(Min.)


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    PDF 2SA807 Curren07 -50mA;

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SA821

    Abstract: 2SA805 2SA806 2SA832 2sa805a toyo 10KO 2SA802 2SA820
    Text: £• tt A I P N P = J = * » » y u » - QUALITY RELIABILITY v Î j ï W Æ J T Ï h ^ V : Ï Physical Dimension (Ta=25°C) ! mm) (Absolute Maximum Ratings) is -§■ 3Ê -180 V CBO 2SA802, 2SA832 -130 2SA806, 2SA821 -210 V -130 -30 T stg 125 °C -5 5-1 2 5


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    PDF 2SA806, 2SA821 2SA805, 2SA820 2SA802, 2SA832 2SA805 2SA806 2SA832 2sa805a toyo 10KO 2SA802 2SA820

    e50p

    Abstract: xiyi 2SA1558 2SA806 2SA806N
    Text: I 40E i> m ROHM CO LTD 7 fl2 a *m ooDsaas a eirhm h V > V Z £ /Transistors 2SA806/2SA1558 .•■■■" 2 S Ä 8 0 6 “i ' 7 ^ 2 7 -0 7 V 'j3 > h 7 > y x ^ Voltage Amp. Epitaxial Planar PNP Silicon Transistors • ¿i-JfÎTHi 0 / D im e n s io n s Unit : mm


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    PDF 2SA806/2SA1558 -210VfciSÂ -210V 2SA806 2SA1558 T-27-07 Ta-25 e50p xiyi 2SA1558 2SA806 2SA806N

    2SC1619

    Abstract: 2SA808
    Text: AOK AOK Semiconductor Product Specification 2SA808 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1619 APPLICATIONS • For power amplifier and general purpose applications PINNING see Fig.2


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    PDF 2SA808 2SC1619 220WKX 13MAX-

    Untitled

    Abstract: No abstract text available
    Text: b~7 > v 7* $ /Transistors 2SA806 2§A1 5 2SA806/2SA1558 5 8 Vo,ta9eAm p- Epitaxial Planar PNP Silicon Transistors • W fi\t">£|2|/Dim ensions U n it: mm 1) V CE R = - 2 1 0 V t ; i i i t H T '< f c - 5 o 2SA806 2SA1558 6.8±0.2 t f lL 'o • Features 1) H igh


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    PDF 2SA806/2SA1558 2SA806 2SA1558 2SA806 A806/2SA1558

    2SA1558

    Abstract: No abstract text available
    Text: h "7 > V 7s $ / I ransistors 2SA806 2SA1558 2SA806/2SA1558 :> V = i h > 7 > v 7 ^ Epitaxial Planar PNP Silicon Transistors Ü É Œ ^ Î ± i S lliffl/H ig h Voltage Amp. • fl-Jfivfiilia/D im ensions Unit : mm 1) S i f Œ f ' f e S c V C E R = ~ 210V • Features


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    PDF 2SA806/2SA1558 2SA806 2SA1558 2SA1558

    yx 801

    Abstract: yx 801 ic 2SA1558 2sa155 801 yx 2SA806 2SA806N
    Text: ROHM CO LTjD 4DE D 7 0 2 0 = *^ 00053Ô2 h 7 > y X $ //Transistors 2SA806/2SA1558 2SA806 IRHM A I k ° £ 3 - V W U 7 ° U - ; H f 2 P N P y i j q > 7 ^ 2 7 -0 7 h 7 > y X ^ IÎJŒ ® i±iilÎiffl/High Voltage Amp. Epitaxial Planar PNP Silicon Transistors


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    PDF 2SA806/2SA1558 7ZZ7-07 553voltage 210Vt -210V 2SA806 2SA1558 T-27-07 yx 801 yx 801 ic 2SA1558 2sa155 801 yx 2SA806 2SA806N

    2SA807

    Abstract: 2SC1618
    Text: AOK AOK Semiconductor Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1618 APPLICATIONS • For power amplifier and general purpose applications PINNING see Fig.2


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    PDF 2SA807 2SC1618 13MAX

    5AW transistor

    Abstract: 2SA80 2SA807 2SA81 2SA814 2SA815 2SA817 2SC1601
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SA814 2SA815 2SA81Ã 2SA817 2SA81& 100MHz) 5AW transistor 2SA80 2SA807 2SA81 2SA814 2SC1601

    2SA143

    Abstract: transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2SA143 transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465

    2SA143

    Abstract: CK676 CK14A 2SA17 2N371 2N544 ck17a 2N370/33 2N544/33 2SA13
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF 2SA133 2SA364 2SA80 2SA82 2SA85 2SA131 2SA365 2SA369 2SA306 2SA143 CK676 CK14A 2SA17 2N371 2N544 ck17a 2N370/33 2N544/33 2SA13