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    2N120 Price and Stock

    Walsin Technology Corporation 0402N120J250CT

    CAP CER 12PF 25V C0G/NP0 0402
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    DigiKey 0402N120J250CT Reel 780,000 10,000
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    Walsin Technology Corporation 0402N120J500CT

    CAP CER 12PF 50V C0G/NP0 0402
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    DigiKey 0402N120J500CT Cut Tape 29,240 1
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    0402N120J500CT Digi-Reel 29,240 1
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    0402N120J500CT Reel 20,000 10,000
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    Chip-Germany GmbH 0402N120J500CT 1,745
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    Chip1Stop 0402N120J500CT Cut Tape 9,250
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    Littelfuse Inc IXTP02N120P

    MOSFET N-CH 1200V 200MA TO220AB
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    DigiKey IXTP02N120P Tube 10,594 1
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    Newark IXTP02N120P Bulk 470 1
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    Chip1Stop IXTP02N120P Tube 300
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    CoreStaff Co Ltd IXTP02N120P 1,200
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    STMicroelectronics STH12N120K5-2

    MOSFET N-CH 1200V 12A H2PAK-2
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    DigiKey STH12N120K5-2 Reel 2,000 1,000
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    Avnet Americas STH12N120K5-2 Reel 19,000 14 Weeks 1,000
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    Mouser Electronics STH12N120K5-2 1,006
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    STMicroelectronics STH12N120K5-2 1,006 1
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    Avnet Silica STH12N120K5-2 3,000 15 Weeks 1,000
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    EBV Elektronik STH12N120K5-2 2,000 15 Weeks 1,000
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    Win Source Electronics STH12N120K5-2 20,000
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    onsemi NVH4L022N120M3S

    SIC MOS TO247-4L 22MOHM 1200V
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    DigiKey NVH4L022N120M3S Tube 837 1
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    Avnet Americas NVH4L022N120M3S Tube 5,400 17 Weeks 30
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    Mouser Electronics NVH4L022N120M3S 706
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    Newark NVH4L022N120M3S Bulk 70 1
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    Rochester Electronics NVH4L022N120M3S 329 1
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    Richardson RFPD NVH4L022N120M3S 450 450
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    Avnet Asia NVH4L022N120M3S 90 17 Weeks 450
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    Avnet Silica NVH4L022N120M3S 18 Weeks 30
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    EBV Elektronik NVH4L022N120M3S 1,950 19 Weeks 30
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    Flip Electronics NVH4L022N120M3S 240,000
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    New Advantage Corporation NVH4L022N120M3S 1,560 1
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    Wuhan P&S NVH4L022N120M3S 1,550 1
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    Find more 2N120 price and stock on Findchips.com

    2N120 Datasheets (130)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N120 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N120 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N120 Unknown GE Transistor Specifications Scan PDF
    2N120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N120 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N120 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N120 Unknown Vintage Transistor Datasheets Scan PDF
    2N1200 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1200 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1200 Unknown Transistor Replacements Scan PDF
    2N1200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1200 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1200 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N1200 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1201 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1201 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1201 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N1201 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N1200 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1200

    Untitled

    Abstract: No abstract text available
    Text: 2N1204A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


    Original     		PDF 2N1204A

    Untitled

    Abstract: No abstract text available
    Text: 2N1204 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


    Original     		PDF 2N1204

    Untitled

    Abstract: No abstract text available
    Text: 2N1201 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1201

    2N120

    Abstract: igbt 2n120 125OC power ic 5v 1A 034
    Text: Preliminary Data Sheet High Voltage IGBT IXGY 2N120 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 5 A IC90 TC = 90°C 2 A


    Original     		PDF O-252 2N120 728B1 2N120 igbt 2n120 125OC power ic 5v 1A 034

    igbt 2n120

    Abstract: No abstract text available
    Text: Preliminary Data Sheet High Voltage IGBT IXGY 2N120 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 5 A IC90 TC = 90°C 2 A


    Original     		PDF O-252 2N120 728B1 igbt 2n120

    2N1208 - 2N1212

    Abstract: No abstract text available
    Text: <£s.m.i-Cond.u.ctoi ^Pr 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1618 2N1208 - 2N1212 2N1724 2N1616/A - 2N1617/A 2N2101 POWER TRANSISTORS Sat Test Voltages Conditions PT TYPE @ NO. 25aC


    Original     		PDF 2N1618 2N1208 2N1212 2N1724 2N1616/A 2N1617/A 2N2101 2N1208 2N1209 2N1208 - 2N1212

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    Untitled

    Abstract: No abstract text available
    Text: 2N1205 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1205 Freq17M

    2N120

    Abstract: No abstract text available
    Text: 2N120 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N120

    HGT1S2N120CNDS

    Abstract: HGTP2N120CND HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN
    Text: 2N120CND, 2N120CNDS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The 2N120CND and 2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    Original     		PDF HGTP2N120CND, HGT1S2N120CNDS HGTP2N120CND HGT1S2N120CNDS TA49313. TA49056 RHRD4120) HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN

    KELTRON

    Abstract: b0949 B0539 sot6001 2SC2516M B0123 2n5978
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507


    Original     		PDF 1000n 127var 220AB 220AB 20var KELTRON b0949 B0539 sot6001 2SC2516M B0123 2n5978

    uPD70F3548

    Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
    Text: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559


    Original     		PDF V850E2/Fx4 32-bit V850E2/FG4 PD70F3548 PD70F3549 PD70F3550 V850E2/FJ4 PD70F3551 PD70F3552 PD70F3553 uPD70F3548 uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4

    D2W220CD18

    Abstract: D2W220CD D2N120CD D2W220CG18 D2N120CG saia 801C D2N120CF D2N220CD D2N220CF
    Text: mitièmm NO N-tra? ¡ 0 A rm s ^ [§ ] n [l^ © V r m s m A C 'J U — D 2N120CD D 2N120CF 2N120CG D 2N220CD D2N220CF D2N220CG « ( O R ^ 'C r t * ) m fè N O . (M ttP .3 0 ) : ( & ) 75g m m ± 7 E fà ut UL *f % %±m CSA ¡E/È 00 TUV i im m E tu < i V'rfjis-y—itntifc


    OCR Scan     		PDF D2N120CD D2N120CF D2N120CG D2N220CD D2N220CF D2N220CG ttR30) D2W220CD18 D2W220CD D2W220CG18 saia 801C

    2N120

    Abstract: ScansUX7
    Text: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L-S 5 8900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures mechanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		PDF 2N120 ScansUX7

    2N2632

    Abstract: No abstract text available
    Text: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60


    OCR Scan     		PDF 2N1208 2N1212 2N1616 2N1617 2N1618 2N1702 2N1724 2N1724A 2N1725 2N2632

    2N2102A

    Abstract: 2n1506 2n1714 2N1904 2N1716 2N1209 2N1212 2N1479 2N1480 2N1481
    Text: VI P II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BR E A K D O \ A/N V OLTAGE S NPN DEVICE CASE h FE V CB V CE V EB V CE V SAI r. V O L T / 5Æ ES ( M ax.) 'c 'c (A) M in . Max. (A) 'b (A) V CE (V) V BE (V) 2N1209 TO-61 45 45 5 12 2 20 80 2 0.25


    OCR Scan     		PDF 2N1209 2N1212 2N1479 2N1480 2N1481 2N1482 2N1483 2N1485 2N1486 2N1487 2N2102A 2n1506 2n1714 2N1904 2N1716 2N1209 2N1212 2N1479 2N1480 2N1481

    Untitled

    Abstract: No abstract text available
    Text: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069


    OCR Scan     		PDF 2N5468 2N5469 2N2811 2N2812 2N2813 2N6495 2N4231 2N4232A 2N4233 2N4233A

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725


    OCR Scan     		PDF 2N1208 2N1209 2N1212 2N1616 2N1617 2N1618 2N1724 2N1724A 2N1725 2N2632

    2C415

    Abstract: 2C425 2N2222ACSM4 2C746 2N1721 1N5617CSMD 2N2222A LCC1 2N2219AQF
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 1N914CSM 1N4001CSM 1N4001QCSM 1N4003CSM4 1N4003QCSM 1N4148CSM 1N4151CSM 1N4572ACSMD 1N5617CSMD 1N5711CSM 2C415 2C425 2C444 2C746 2N1132 2N1208 2N1209 2N1483A 2N1484A 2N1485A 2N1486A


    OCR Scan     		PDF 1N914CSM 1N4001CSM 1N4001QCSM 1N4003CSM4 1N4003QCSM 1N4148CSM 1N4151CSM 1N4572ACSMD 1N5617CSMD 1N5711CSM 2C415 2C425 2N2222ACSM4 2C746 2N1721 2N2222A LCC1 2N2219AQF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N1047

    Abstract: SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B
    Text: 8 3 6 5 7 0 0 S O L I D PO WE R C O R P 95C 0 0 1 1 6 SOLID POWER CORP T5 D "T"^3 Û f DE | fl3bS7DD DDDDllb 2 P O W E R T R A N S IS T O R S PT 2N1047 TO-57 40 aS hFE MAXIM UM RATINGS @ Ic 25°C BVcbo BV ceo BV ebo V V V A Watts TYPE NO. Ic A MIN MAX V CE


    OCR Scan     		PDF 2N1047 2N1048 2N1049 2N1050 2N1047A 2N1048A f2N1049A t2N1050A 2N1047B 2N1048B 2N1047 SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B

    2N1212

    Abstract: 2N2101 2N1208 to-53 transistor 2n1208 2N1209 2N1616 2N1616A 2N1617 2N1617A
    Text: POWER TRANSISTORS Sat Test Voltages Conditions « ! » a r a i * 7 7 * hTM msm mrm l i r a y v V A A A ma FT TYPE NO. 2N1047 TO-57 , MAXIMUM RATINGS <feCm* • i-i’n o i A w & ? V •• y " V 80 6 40 80 .5 h* . mW 12 36 .5 10 7.5 6.0 .5 .250 2N1048 40 120


    OCR Scan     		PDF 2N1208 2N1209 2N1212 2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1724 2N2101 to-53 transistor 2n1208

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175