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    2N118 Price and Stock

    Susumu Co Ltd RG2012N-1181-W-T1

    RES SMD 1.18KOHM 0.05% 1/8W 0805
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    DigiKey RG2012N-1181-W-T1 Cut Tape 885 1
    • 1 $0.67
    • 10 $0.556
    • 100 $0.4606
    • 1000 $0.35006
    • 10000 $0.35006
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    RG2012N-1181-W-T1 Digi-Reel 885 1
    • 1 $0.67
    • 10 $0.556
    • 100 $0.4606
    • 1000 $0.35006
    • 10000 $0.35006
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    RG2012N-1181-W-T1 Reel 1,000
    • 1 -
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    • 1000 $0.34577
    • 10000 $0.34025
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    Mouser Electronics RG2012N-1181-W-T1
    • 1 $0.91
    • 10 $0.645
    • 100 $0.44
    • 1000 $0.326
    • 10000 $0.289
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    3M Interconnect 4412N-1--18YD

    TAPE SEALING TRANSLUCENT 1"X18YD
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    DigiKey 4412N-1--18YD Box 4 1
    • 1 $59.43
    • 10 $59.43
    • 100 $59.43
    • 1000 $59.43
    • 10000 $59.43
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    Susumu Co Ltd RG2012N-1182-B-T1

    RES SMD 11.8K OHM 0.1% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1182-B-T1 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.18617
    • 10000 $0.18617
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    Mouser Electronics RG2012N-1182-B-T1
    • 1 $0.65
    • 10 $0.461
    • 100 $0.318
    • 1000 $0.228
    • 10000 $0.21
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    Susumu Co Ltd RG2012N-1180-P-T1

    RES SMD 118 OHM 0.02% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1180-P-T1 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.40425
    • 10000 $0.40425
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    Susumu Co Ltd RG2012N-1183-D-T5

    RES SMD 118K OHM 0.5% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-1183-D-T5 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.09526
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    Mouser Electronics RG2012N-1183-D-T5
    • 1 $0.36
    • 10 $0.257
    • 100 $0.179
    • 1000 $0.125
    • 10000 $0.095
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    Find more 2N118 price and stock on Findchips.com

    2N118 Datasheets (186)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N118 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N118 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N118 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N118 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N118 Unknown Vintage Transistor Datasheets Scan PDF
    2N118 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N118 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N118 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N118 Unknown GE Transistor Specifications Scan PDF
    2N118 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1180 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1180 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1180 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1180 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N1180 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1180 Unknown Vintage Transistor Datasheets Scan PDF
    2N1180 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1180 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1180 Unknown GE Transistor Specifications Scan PDF
    2N1180 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ...

    2N118 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N1183B

    Abstract: No abstract text available
    Text: 2N1183B Ge PNP Power BJT 19.98 Transistors Bipolar Germanium PNP Power Transist. Page 1 of 1 Enter Your Part # Home Part Number: 2N1183B Online Store 2N1183B Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		2N1183B 2N1183B com/2n1183b PDF

    2N118A

    Abstract: ScansUX7
    Text: TYPE 2N118A N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 8 9 8 , M A R C H 1 9 6 8 - R E V I S E D M A R C H 1 9 7 3 18 to 8 6 beta spread Specifically designed for Ugh gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		2N118A 1968-revised ScansUX7 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N118 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N118 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1183A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1183A Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1183 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)45 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100# I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1183 Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1183B Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1183B Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1185 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.130 h(FE) Max. Current gain.


    Original     		2N1185 PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 5 8 8 9 7 , MARCH 1 9 5 8 18 to 40 beta spread Specifically desigaed for high gaia at high teaiperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.


    OCR Scan     		2N118 X10-6 PDF

    2N118A

    Abstract: No abstract text available
    Text: TYPE 2N118A N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN NO. DL-S 7 3 8 9 8 , M A R C H 1 9 6 8 - R E V I S E D M A R C H 1 9 7 3 18 to 86 beta spread Specifically designed for high gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		2N118A PDF

    AD132

    Abstract: 2N400 2N2140A ad131 MP2144 germanium AD140
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 2N257G 2N2578 2N1759 NKT450 2N2358 2N2368 2N2553 2N2557 AUY33 2N11838 2N1038 TI367 TI367 TI367A TI367A 2N3159 AD140 AD140 AD140 AD153 ~~~~~ 25 30 2N1359 2N235A 2N399 2N401 2N1184B 2N400 2N236 2N236A


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1184A+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1184A Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1184B Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1184B Freq500k PDF

    2N1183A

    Abstract: No abstract text available
    Text: 2N1183A+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1183A Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1189 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain.60 h(FE) Max. Current gain.


    Original     		2N1189 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1184 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)45 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1184 Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N118A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N118A PDF

    germanium transistors NPN

    Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
    Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A


    OCR Scan     		2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 germanium transistors NPN TO13 MT28 Germanium power 2N1044 2N1045 2N2556 2N2557 PDF

    2N2067

    Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
    Text: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE


    OCR Scan     		2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B 2N1183 Ind50-100/3/2 2N1541S 2N15425 2N2067 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1184A PDF

    2N117

    Abstract: 2N118 2N119
    Text: I MI L- S-19500/2B AMENOMENT 1 23 February 1981 ● MILITARY SEMICONDUCTOR OEVICE, TYPES SPECIFICATION TRANSISTOR, 2N118, 2N117, NPN, ANO SILICON, LOW POMER 2N119 This amendment forms a part of Military Specification MI L-s-19500/z B, dated 14 June 1968, and is approved for use by all Departments


    Original     		S-19500/2B 2N118, 2N117, 2N119 L-s-19500/z -078B-1) 2N117 2N118 2N119 PDF

    2N117

    Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
    Text: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory


    Original     		MIL-S-19500/2B MfL-S-19500/2A MfL-S-19500/35B 2N117. 2N118, 2N119 2NI17 2N117 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1186 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45ã V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain.33 h(FE) Max. Current gain.


    Original     		2N1186 Freq750k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1184A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1184A Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1183B+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1183B Freq500k PDF

    2N1188

    Abstract: No abstract text available
    Text: 2N1188 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45ã V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain.80 h(FE) Max. Current gain.


    Original     		2N1188 PDF