2N6387 Search Results

transistor A05

Abstract: 2N6388 npn darlington 2N6386 2N6387 2N6666 2N6667 2N6668 Complementary Darlington Audio Power Amplifier 079V
Contextual Info: ÏÏÏ 38 75081 dF | 3 fl? S D Û l Q Q l7E 4fl 7 G E S OL ID S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington

2N6387

Abstract: 1N5825 2N6388 MSD6100
Contextual Info: MOTOROLA Order this document by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE

Contextual Info: • o o 2 t i 3 EH ü ■ SCS-THOMSON IW fô m i « ! S G S - THOMSON ^ T - 3 3 * z ° i 2N6386 2N6387/2N6388 30E ]> POWER DARLINGTON TRANSISTORS D E S C R IP T IO N The 2N6386, 2N6387 and 2N6388 are silicon epi­ taxial-base NPN transistors in monolithic Darling­

N6337

Abstract: n633 MOTOROLA 6-38-7
Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA 2N6387/D 2N6387 2N 6388* Plastic Medium-Power Silicon Transistors ’ M otorola Preferred Device . . . designed for general-purpose amplifier and low -speed switching applications. • • • •

2N6387

Abstract: 2N6387-D 1N5825 2N6388 MSD6100
Contextual Info: ON Semiconductor 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60–80 VOLTS

2n6386

Contextual Info: ÏÏÏ 38 75 081 dF | 3fl? S D Û l QQl 7E4f l G E SO L I D S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington

Contextual Info: 2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc

Contextual Info: File Num ber 610 2N6386, 2N6387, 2N6388 10-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A 2N6387, 2N6388 Gain of 1000 at 3 A (2N6386) I! o Features: t • Operates from 1C without predriver :

2N6387

Abstract: 2N6388 1N5825 2N6387G 2N6388G MSD6100
Contextual Info: 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium−Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc

mj2955 TO-220

Abstract: 2N3055 TO-220 MJ2955 BDX54S BDX18 2N3055 TO-3 4116-4 bdw21 BDX88b crimson 5110
Contextual Info: CRIMSON SEM IC ONDUC TO R INC d F | asm C H b 2514096 CRIMSON SEMICONDUCTOR 99D 00 33 4 INC D 7 EPITAXIAL BASE - TO -220 continued I ' j " NPN PNP TIP121 TIP122 TIP130 TIP131 TIP132 2N6121 2N6122 2N6123 2N6288 2N6290 2N6292 2N6386 2N6387 2N6388 2N6486 2N6487

2N6388 AT MICROELECTRONICS

Abstract: 2N6387 2N6388 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS • ■ ■ ■ 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic

2N6388

Abstract: 2N6387
Contextual Info: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS

2N6386

Abstract: MOTOROLA 6-38-7
Contextual Info: MOTORCL A SC X S TRS/ R F 15E 0 | b3fc.72S4 0 0 0 ^ 4 4 2N6386 2N6387 2N6388 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER SILICON TRANSISTORS DARLINGTON . . . designed for general-purpose amplifier and low-speed switching 8 AND 10 AMPERE applications.

2N6388

Contextual Info: SGS-THOMSON 2N6387 2N6388 [MSIfiiSilLiSìlKìtÉfflOSS SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and

SCR 2N6399

Abstract: 2N6424 2N6399 2N6407 2N63 2N6384 2N6385 2N6386 2N6387 2N6388
Contextual Info: SEMELAB LTD Type N°. 37E » Option"^ Po,ari,V Package VCEO fil33ia? QGOOOSfl 2 • S M L B ^ nJ hr e < VCE/'C PD 2N6384 2N6385 2N6386 2N6387 2N6388 SCREEN SCREEN NPN NPN NPN NPN NPN 103 T03 T0220 10220 T0220 60 80 40 60 80 10 10 8 10 10 lk-20k lk-20k lk-20k

2n6388

Abstract: 2N6387 2N6386 2N6666 2N6667 2N6668
Contextual Info: ¿ J A m o s p e c DARLINGTON SILICON POWER TRANSISTORS NPN 2N6386 2N6387 2N6388 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV c e o c s u s , = 40 V Min - 2N6386 = 60 V (Min) - 2N6387

Contextual Info: MOTOROLA Order this document by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 2N 6388* Plastic Medium-Power Silicon Transistors ‘ Motorola Preferred Device . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications.

2N6387

Abstract: 2N6388
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 2N6388 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 2N6388 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS

2N6387

Abstract: 2N6388
Contextual Info: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS n 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.

2N6388

Abstract: 2N6388G 2N6387 2N6387G
Contextual Info: 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 Typ @ IC = 4.0 Adc •ăCollector-Emitter Sustaining Voltage - @ 100 mAdc

Contextual Info: 2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc

Contextual Info: rz z Ä T# S G S -T H O M S O N « « L E M « ! 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE D ESCRIP TIO N

2N6388

Abstract: 2N6387 2N6386
Contextual Info: JMnic Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2N6666/6667/6668 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・Designed for general-purpose amplifier