2N6384 Search Results

2N3683

Abstract: 2N6385 shockley diode 2N6383 2N6384
Contextual Info: 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER

2N6385

Abstract: shockley diode 2N6383 2N6384 ic4040
Contextual Info: TECHNICAL DATA 2N6383 JANTX, JTXV 2N6384 JANTX, JTXV 2N6385 JANTX, JTXV Processed per MIL-PRF-19500/523 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

f327

Abstract: TA8349 TA8348 2N6384 2N6385 shockley diode 2N6383 2N6383 RCA 2N6385 RCA GA-14
Contextual Info: 3875081 G E SOLID STATE 01 3Ö7S0Ö1 0G17243 Û Darlington Power Transistors File Number 609 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c {FLANGE I Features: • Operates fro m 1C w ith o u t p redriver

2N6385

Abstract: 2N6383 shockley diode 2N6384
Contextual Info: Inchange Semiconductor Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6648/6649/6650 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for low and medium frequency

transitor

Contextual Info: SILICON NPN DARLINGTON POWER TRANSITOR 2N6384 • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO VEBO IB IC IB PT PT Collector – Emitter Voltage Collector – Base Voltage

538 NPN transistor

Abstract: 60N60 TRANSISTOR 538
Contextual Info: 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. 5.38 . Page 1 of 2 Enter Your Part # Home Part Number: 2N6384 Online Store 2N6384 Diodes 10 A N -P-N darlington power transistor. 60 V. 100 W. Transistors Gain of 1000 at 5 A.

SCR 2N6399

Abstract: 2N6424 2N6399 2N6407 2N63 2N6384 2N6385 2N6386 2N6387 2N6388
Contextual Info: SEMELAB LTD Type N°. 37E » Option"^ Po,ari,V Package VCEO fil33ia? QGOOOSfl 2 • S M L B ^ nJ hr e < VCE/'C PD 2N6384 2N6385 2N6386 2N6387 2N6388 SCREEN SCREEN NPN NPN NPN NPN NPN 103 T03 T0220 10220 T0220 60 80 40 60 80 10 10 8 10 10 lk-20k lk-20k lk-20k

2N6385

Abstract: 2N6383 2N6384 shockley diode
Contextual Info: SavantIC Semiconductor Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6648/6649/6650 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for low and medium frequency power application such as power switching

Contextual Info: 2N6383, 2N6384, 2N6385 SbE J> • HARRIS SErHCOND SECTOR File Number 609 4302271 0G4G542 Th4 HHAS 10-Ampere N-P-N Darlington Power Transistors 7 ^ 3 3 -¿2-Ÿ 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS Features: ■ Operates from 1C without predriver

2N6385

Abstract: 2N6383 2N6384 audio amplifer shockley diode
Contextual Info: JMnic Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6648/6649/6650 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for low and medium frequency power application such as power switching

2N6127

Abstract: 2N6354 2N5007 2N6262 2N6350 2N6351 2N6352 2N6353 2N6383 2N6384
Contextual Info: - 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VcBO VCEO (sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

shockley diode

Abstract: 2N6385 2N6383 2N6384
Contextual Info: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices Qualified Level 2N6383 2N6384 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

TO61 package

Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

2N6385

Abstract: shockley diode 2N6383 2N6384
Contextual Info: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices Qualified Level 2N6383 2N6384 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

Contextual Info: SILICON NPN DARLINGTON POWER TRANSITOR 2N6384 • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO VEBO IB IC IB PT PT Collector – Emitter Voltage Collector – Base Voltage

TA8349

Abstract: 2N6383 RCA TA8348 2N6384 2N6385 RCA 2n6385 2N6384 RCA
Contextual Info: 3875081 G E SOLID ST AT E 01 1 > F | 3Ô7S0Û1 0G17243 fi File Number 609 ¿ y -*? 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c Features: • ■ {FLANGE I Operates from 1C w ithout predriver

Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

92CS-208S6

Abstract: 2N6384 N6385 ta8348 2N6383 RCA
Contextual Info: 2N6383, 2N6384, 2N6385 File N u m be r 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS Features: • Operates from 1C without predriver ■ Low leakage at high temperature Applications: ■ Power switching

2n6385

Contextual Info: TECHNICAL DATA 2N6383 JANTX, JTXV 2N6384 JANTX, JTXV 2N6385 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/523 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

Contextual Info: COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued D e v ice No C ase 2N6262 2N 6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 SECTION 2 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO V o lts V C EO su s

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

2N6650

Abstract: 2N6385 2N6649 shockley diode 2N6383 2N6384 2N6648
Contextual Info: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for low and medium frequency power application such as power switching,audio amplifier,hammer drivers,and shunt and series regulators. FEA TU RES: * High Gain Darlington Performance